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INTERFACE PHENOMENA OF THIN FILM AMORPHOUS AND MICROCRYSTALL INE SILICON LAYERS WITH SINGLE CRYSTALLINE SILICON SUBSTRATE S

Ziel



This project studies the interface of amorphous or microcrystalline silicon thin film with single crystalline silicon substrates. Different pre-deposition, deposition and post-deposition technologies are used together with many physico-chemical and electrical characterization techniques. The purpose is to optimize the process parameters from the feedback data of the different analyses in order to obtain non-crystalline or epitaxially structured thin layers for microelectronic applications.

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Koordinator

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW
EU-Beitrag
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Adresse
75,Kapeldreef 75
3001 HEVERLEE
Belgien

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Beteiligte (2)