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Advanced RF Transceivers for 5G base stations based on GaN Technology.

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Publications

Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

Author(s): Joël Kanyandekwe, Yannick Baines, Jérôme Richy, Sylvie Favier, Charles Leroux, Denis Blachier, Yann Mazel, Marc Veillerot, Jean-Paul Barnes, Mrad Mrad, Cindy Wiese, Matthew Charles
Published in: Journal of Crystal Growth, Issue 515, 2019, Page(s) 48-52, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2019.03.007

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Author(s): Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
Published in: Journal of Electrical Engineering, Issue 69/5, 2018, Page(s) 390-394, ISSN 1339-309X
DOI: 10.2478/jee-2018-0057

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Author(s): Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Ľuboš Černaj, Daniel Donoval, Jaroslav Kováč, Christian Dua, Sylvain L. Delage, Jean-Claude Jacquet
Published in: Journal of Electronic Packaging, Issue 141/3, 2019, ISSN 1043-7398
DOI: 10.1115/1.4043477

DLTFS Study of Defect Distribution in InAlGaN/GaN/SiC HEMT Heterostructures

Author(s): L. Stuchlikova, J. Drobny, A. Kosa, P. Benko, A. Kopecky, S. L. Delage, J. Kovac
Published in: 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018, Page(s) 1-4
DOI: 10.1109/asdam.2018.8544477

Heterogeneous Integration for WLP RF Transceivers : Challenges and Issues

Author(s): Didier Floriot,Philippe Auxemery, Jean-Pierre Viaud
Published in: IMS2019 proceedings, 2019

Analysis of Thermal Properties of Power Multifinger HEMT Devices

Author(s): Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, Daniel Donoval, Jaroslav Kováč, Sylvain Laurent Delage, Jean-Claude Jacquet
Published in: ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 2018
DOI: 10.1115/ipack2018-8256

Defect Analysis of InAlGaN/GaN/SiC HEMT heterostructures

Author(s): L. Stuchlikova, J. Drobny, A. Kosa, J. Vadovsky, P. Benko, A. Skoda, J. Kovac, jr., S. L. Delage
Published in: wocsdice2019, 2019