Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Información del proyecto

YESvGaN

Identificador del acuerdo de subvención: 101007229

DOI

10.3030/101007229

Proyecto cerrado

Fecha de la firma de la CE 12 Mayo 2021

Fecha de inicio 1 Mayo 2021

Fecha de finalización 31 Octubre 2024

Financiado con arreglo a

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coste total

€ 26 986 082,51

Aportación de la UE

€ 7 797 661,50

Coordinado por

ROBERT BOSCH GMBH
Germany

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Websites, patent fillings, videos etc. (4)

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 3

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publicaciones

Thesis and dissertations (2)

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Autores: J. Ziegler (Bosch)
Publicado en: 2022
Editor: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Autores: Andrea Del Fiol (IUNET-UNIPD)
Publicado en: 2023
Editor: Università degli Studi di Padova

Conference proceedings (29)

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autores: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Publicado en: International Reliability Physics Symposium 2023, Edición Yearly, 2023, ISBN 978-1-6654-5672-2
Editor: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Autores: M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Publicado en: NanoInnovation 2024, 2024
Editor: NanoInnovation

GaN industrialization: From lateral to vertical

Autores: C. Huber (Bosch)
Publicado en: 2022
Editor: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

Autores: Nicolò Zagni
Publicado en: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Página(s) 1-3
Editor: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Autores: Sondre Michler (SIL)
Publicado en: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editor: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

Autores: C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Publicado en: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Edición 2023, 2023, Página(s) 1-6
Editor: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Autores: M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Publicado en: GaN Marathon 2024, 2024
Editor: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Autores: E. Brandl
Publicado en: SEMICON Europe 2023, 2023
Editor: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Autores: J. Baringhaus (Bosch)
Publicado en: 2023
Editor: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Autores: Sven Besendörfer (FhG)
Publicado en: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editor: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Autores: I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Publicado en: 14th International Conference on Nitride Semiconductors (ICNS-14), Edición 2023, 2023
Editor: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Autores: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Publicado en: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Editor: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

Autores: JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Publicado en: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Página(s) 1-4
Editor: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices

Autores: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Publicado en: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Página(s) 99-104, ISBN 978-1-6654-8900-3
Editor: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Autores: E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Publicado en: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Editor: CS ManTech

Progess in Magnesium implant into GaN

Autores: Stéphane Morata (IBS)
Publicado en: GMM User meeting IISB may 2023, 2022
Editor: FhG

GaN-based power devices: physics, reliability and perspectives

Autores: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Publicado en: AIP Journal of Applied Physics, 2021
Editor: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Autores: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Publicado en: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Edición Yearly, 2023, Página(s) pp 1-8
Editor: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Autores: M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Publicado en: EMRS Fall Meeting 2024, 2024
Editor: EMRS

GaN Vertical Devices: challenges for high performance and stability

Autores: M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Publicado en: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Editor: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Autores: C. Huber (Bosch)
Publicado en: IC-MPPE, 2022
Editor: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Autores: M. Henn, C. Huber (Bosch)
Publicado en: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Editor: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Autores: Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Publicado en: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Edición 32, 2024, Página(s) 12
Editor: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Autores: E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Publicado en: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Edición May 9-12, 2022, 2022, Página(s) 243-246
Editor: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Autores: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Publicado en: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Editor: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Autores: E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Publicado en: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Editor: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Autores: M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Publicado en: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Editor: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autores: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Publicado en: Proceedings of the Reliability Physics Symposium (IRPS), Edición 2023, 2023, Página(s) 1-5
Editor: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Autores: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Publicado en: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Editor: IEEE
DOI: 10.1109/apec43580.2023.10131351

Non-peer reviewed articles (7)

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Autores: Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Publicado en: Journal of Semiconductors, Edición 45, 2024, Página(s) 032501, ISSN 1674-4926
Editor: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Autores: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Publicado en: IEEE Electron Device Letters, Edición 44, 2024, Página(s) 388-391, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

Autores: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Publicado en: MRS Advances, Edición 7, 2023, Página(s) 1499-1503, ISSN 2059-8521
Editor: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Autores: Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Publicado en: IEEE Transactions on Electron Devices, Edición 71, 2024, Página(s) 1553-1560, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

Autores: Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Publicado en: physica status solidi (a), 2024, ISSN 1862-6300
Editor: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

Autores: Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Publicado en: Electronics, Edición 13, 2024, Página(s) 294, ISSN 2079-9292
Editor: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Autores: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Publicado en: Microelectronics Reliability, Edición 138, 2023, Página(s) 114644, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Peer reviewed articles (13)

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Autores: Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publicado en: Journal of Physics D: Applied Physics, Edición 57, 2024, Página(s) 433002, ISSN 0022-3727
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Autores: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Publicado en: IEEE Transactions on Power Electronics, Edición 39, 2024, Página(s) 14295-14303, ISSN 0885-8993
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Autores: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Publicado en: Applied Physics Express, Edición 17, 2023, Página(s) 016503, ISSN 1882-0778
Editor: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Autores: Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Publicado en: Micromachines, Edición 15, 2024, Página(s) 1157, ISSN 2072-666X
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN

Autores: Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Publicado en: Journal of Applied Physics, Edición 135, 2024, ISSN 0021-8979
Editor: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Autores: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Publicado en: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Edición Volume 11, issue 12, 2022, Página(s) 1818, ISSN 2079-9292
Editor: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications

Autores: Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Publicado en: IET Power Electronics, Edición 16, 2023, Página(s) 2482-2491, ISSN 1755-4535
Editor: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

Autores: Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Publicado en: physica status solidi (b), 2024, ISSN 0370-1972
Editor: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Autores: Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Publicado en: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Editor: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Autores: M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Publicado en: IEEE Transactions on Electron Devices, Edición 71, 2024, Página(s) 1344-1355, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al₂O₃/GaN MOS Capacitors

Autores: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Publicado en: IEEE Transactions on Electron Devices, Edición 71, 2024, Página(s) 1561-1566, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Autores: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Publicado en: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Editor: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Autores: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Publicado en: Semiconductor Science and Technology, Edición Volume 38, Number 1, 2022, Página(s) 015006, ISSN 0268-1242
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Other (1)

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Autores: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Publicado en: Compound semiconductor week 2023, 2023
Editor: HAL