Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Informazioni relative al progetto

YESvGaN

ID dell’accordo di sovvenzione: 101007229

DOI

10.3030/101007229

Progetto chiuso

Data della firma CE 12 Maggio 2021

Data di avvio 1 Maggio 2021

Data di completamento 31 Ottobre 2024

Finanziato da

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Costo totale

€ 26 986 082,51

Contributo UE

€ 7 797 661,50

Coordinato da

ROBERT BOSCH GMBH
Germany

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Websites, patent fillings, videos etc. (4)

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 3

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Pubblicazioni

Thesis and dissertations (2)

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Autori: J. Ziegler (Bosch)
Pubblicato in: 2022
Editore: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Autori: Andrea Del Fiol (IUNET-UNIPD)
Pubblicato in: 2023
Editore: Università degli Studi di Padova

Conference proceedings (29)

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autori: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Pubblicato in: International Reliability Physics Symposium 2023, Numero Yearly, 2023, ISBN 978-1-6654-5672-2
Editore: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Autori: M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Pubblicato in: NanoInnovation 2024, 2024
Editore: NanoInnovation

GaN industrialization: From lateral to vertical

Autori: C. Huber (Bosch)
Pubblicato in: 2022
Editore: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

Autori: Nicolò Zagni
Pubblicato in: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Pagina/e 1-3
Editore: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Autori: Sondre Michler (SIL)
Pubblicato in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editore: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

Autori: C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Pubblicato in: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Numero 2023, 2023, Pagina/e 1-6
Editore: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Autori: M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Pubblicato in: GaN Marathon 2024, 2024
Editore: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Autori: E. Brandl
Pubblicato in: SEMICON Europe 2023, 2023
Editore: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Autori: J. Baringhaus (Bosch)
Pubblicato in: 2023
Editore: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Autori: Sven Besendörfer (FhG)
Pubblicato in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editore: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Autori: I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Pubblicato in: 14th International Conference on Nitride Semiconductors (ICNS-14), Numero 2023, 2023
Editore: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Autori: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Pubblicato in: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Editore: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

Autori: JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Pubblicato in: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Pagina/e 1-4
Editore: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices

Autori: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Pubblicato in: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Pagina/e 99-104, ISBN 978-1-6654-8900-3
Editore: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Autori: E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Pubblicato in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Editore: CS ManTech

Progess in Magnesium implant into GaN

Autori: Stéphane Morata (IBS)
Pubblicato in: GMM User meeting IISB may 2023, 2022
Editore: FhG

GaN-based power devices: physics, reliability and perspectives

Autori: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Pubblicato in: AIP Journal of Applied Physics, 2021
Editore: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Autori: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Pubblicato in: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Numero Yearly, 2023, Pagina/e pp 1-8
Editore: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Autori: M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Pubblicato in: EMRS Fall Meeting 2024, 2024
Editore: EMRS

GaN Vertical Devices: challenges for high performance and stability

Autori: M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Pubblicato in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Editore: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Autori: C. Huber (Bosch)
Pubblicato in: IC-MPPE, 2022
Editore: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Autori: M. Henn, C. Huber (Bosch)
Pubblicato in: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Editore: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Autori: Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Pubblicato in: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Numero 32, 2024, Pagina/e 12
Editore: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Autori: E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Pubblicato in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Numero May 9-12, 2022, 2022, Pagina/e 243-246
Editore: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Autori: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Pubblicato in: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Editore: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Autori: E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Pubblicato in: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Editore: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Autori: M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Pubblicato in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Editore: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autori: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Pubblicato in: Proceedings of the Reliability Physics Symposium (IRPS), Numero 2023, 2023, Pagina/e 1-5
Editore: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Autori: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Pubblicato in: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Editore: IEEE
DOI: 10.1109/apec43580.2023.10131351

Non-peer reviewed articles (7)

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Autori: Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Pubblicato in: Journal of Semiconductors, Numero 45, 2024, Pagina/e 032501, ISSN 1674-4926
Editore: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Autori: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Pubblicato in: IEEE Electron Device Letters, Numero 44, 2024, Pagina/e 388-391, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

Autori: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Pubblicato in: MRS Advances, Numero 7, 2023, Pagina/e 1499-1503, ISSN 2059-8521
Editore: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Autori: Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Pubblicato in: IEEE Transactions on Electron Devices, Numero 71, 2024, Pagina/e 1553-1560, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

Autori: Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Pubblicato in: physica status solidi (a), 2024, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

Autori: Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Pubblicato in: Electronics, Numero 13, 2024, Pagina/e 294, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Autori: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Pubblicato in: Microelectronics Reliability, Numero 138, 2023, Pagina/e 114644, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Peer reviewed articles (13)

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Autori: Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Pubblicato in: Journal of Physics D: Applied Physics, Numero 57, 2024, Pagina/e 433002, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Autori: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Pubblicato in: IEEE Transactions on Power Electronics, Numero 39, 2024, Pagina/e 14295-14303, ISSN 0885-8993
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Autori: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Pubblicato in: Applied Physics Express, Numero 17, 2023, Pagina/e 016503, ISSN 1882-0778
Editore: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Autori: Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Pubblicato in: Micromachines, Numero 15, 2024, Pagina/e 1157, ISSN 2072-666X
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN

Autori: Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Pubblicato in: Journal of Applied Physics, Numero 135, 2024, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Autori: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Pubblicato in: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Numero Volume 11, issue 12, 2022, Pagina/e 1818, ISSN 2079-9292
Editore: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications

Autori: Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Pubblicato in: IET Power Electronics, Numero 16, 2023, Pagina/e 2482-2491, ISSN 1755-4535
Editore: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

Autori: Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Pubblicato in: physica status solidi (b), 2024, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Autori: Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Autori: M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 71, 2024, Pagina/e 1344-1355, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al₂O₃/GaN MOS Capacitors

Autori: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Pubblicato in: IEEE Transactions on Electron Devices, Numero 71, 2024, Pagina/e 1561-1566, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Autori: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Pubblicato in: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Editore: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Autori: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Pubblicato in: Semiconductor Science and Technology, Numero Volume 38, Number 1, 2022, Pagina/e 015006, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Other (1)

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Autori: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Pubblicato in: Compound semiconductor week 2023, 2023
Editore: HAL