Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

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Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Pubblicazioni

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Autori: J. Ziegler (Bosch)
Pubblicato in: 2022
Editore: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Autori: Andrea Del Fiol (IUNET-UNIPD)
Pubblicato in: 2023
Editore: Università degli Studi di Padova

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autori: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Pubblicato in: International Reliability Physics Symposium 2023, Numero Yearly, 2023, ISBN 978-1-6654-5672-2
Editore: IEEE
DOI: 10.1109/irps48203.2023.10117719

GaN industrialization: From lateral to vertical

Autori: C. Huber (Bosch)
Pubblicato in: 2022
Editore: IEEE

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Autori: Sondre Michler (SIL)
Pubblicato in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editore: IWN
DOI: 10.1088/1361-6641/aca42a

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Autori: J. Baringhaus (Bosch)
Pubblicato in: 2023
Editore: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Autori: Sven Besendörfer (FhG)
Pubblicato in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Editore: IWN

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Autori: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Pubblicato in: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Editore: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Embedding Solutions for vertical SiC and GaN Power Devices

Autori: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Pubblicato in: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Pagina/e 99-104, ISBN 978-1-6654-8900-3
Editore: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Progess in Magnesium implant into GaN

Autori: Stéphane Morata (IBS)
Pubblicato in: GMM User meeting IISB may 2023, 2022
Editore: FhG

GaN-based power devices: physics, reliability and perspectives

Autori: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Pubblicato in: AIP Journal of Applied Physics, 2021
Editore: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Autori: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss, Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Pubblicato in: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Numero Yearly, 2023, Pagina/e pp 1-8
Editore: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Autori: C. Huber (Bosch)
Pubblicato in: IC-MPPE, 2022
Editore: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Autori: M. Henn, C. Huber (Bosch)
Pubblicato in: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Editore: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Autori: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Pubblicato in: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Editore: HAL

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Autori: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Pubblicato in: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Editore: IEEE
DOI: 10.1109/apec43580.2023.10131351

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Autori: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Pubblicato in: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Numero Volume 11, issue 12, 2022, Pagina/e 1818, ISSN 2079-9292
Editore: MDPI

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Autori: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Pubblicato in: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Editore: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Autori: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Pubblicato in: Semiconductor Science and Technology, Numero Volume 38, Number 1, 2022, Pagina/e 015006, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

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