Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Informations projet

YESvGaN

N° de convention de subvention: 101007229

DOI

10.3030/101007229

Projet clôturé

Date de signature de la CE 12 Mai 2021

Date de début 1 Mai 2021

Date de fin 31 Octobre 2024

Financé au titre de

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coût total

€ 26 986 082,51

Contribution de l’UE

€ 7 797 661,50

Coordonné par

ROBERT BOSCH GMBH
Germany

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Websites, patent fillings, videos etc. (4)

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 3

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publications

Thesis and dissertations (2)

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Auteurs: J. Ziegler (Bosch)
Publié dans: 2022
Éditeur: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Auteurs: Andrea Del Fiol (IUNET-UNIPD)
Publié dans: 2023
Éditeur: Università degli Studi di Padova

Conference proceedings (29)

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Auteurs: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Publié dans: International Reliability Physics Symposium 2023, Numéro Yearly, 2023, ISBN 978-1-6654-5672-2
Éditeur: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Auteurs: M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: NanoInnovation 2024, 2024
Éditeur: NanoInnovation

GaN industrialization: From lateral to vertical

Auteurs: C. Huber (Bosch)
Publié dans: 2022
Éditeur: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

Auteurs: Nicolò Zagni
Publié dans: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Page(s) 1-3
Éditeur: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Auteurs: Sondre Michler (SIL)
Publié dans: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Éditeur: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

Auteurs: C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Publié dans: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Numéro 2023, 2023, Page(s) 1-6
Éditeur: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Auteurs: M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: GaN Marathon 2024, 2024
Éditeur: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Auteurs: E. Brandl
Publié dans: SEMICON Europe 2023, 2023
Éditeur: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Auteurs: J. Baringhaus (Bosch)
Publié dans: 2023
Éditeur: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Auteurs: Sven Besendörfer (FhG)
Publié dans: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Éditeur: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Auteurs: I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Publié dans: 14th International Conference on Nitride Semiconductors (ICNS-14), Numéro 2023, 2023
Éditeur: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Auteurs: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Publié dans: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Éditeur: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

Auteurs: JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Publié dans: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Page(s) 1-4
Éditeur: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices

Auteurs: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Publié dans: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Page(s) 99-104, ISBN 978-1-6654-8900-3
Éditeur: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Auteurs: E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Publié dans: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Éditeur: CS ManTech

Progess in Magnesium implant into GaN

Auteurs: Stéphane Morata (IBS)
Publié dans: GMM User meeting IISB may 2023, 2022
Éditeur: FhG

GaN-based power devices: physics, reliability and perspectives

Auteurs: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Publié dans: AIP Journal of Applied Physics, 2021
Éditeur: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Auteurs: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Publié dans: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Numéro Yearly, 2023, Page(s) pp 1-8
Éditeur: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Auteurs: M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: EMRS Fall Meeting 2024, 2024
Éditeur: EMRS

GaN Vertical Devices: challenges for high performance and stability

Auteurs: M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Publié dans: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Éditeur: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Auteurs: C. Huber (Bosch)
Publié dans: IC-MPPE, 2022
Éditeur: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Auteurs: M. Henn, C. Huber (Bosch)
Publié dans: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Éditeur: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Auteurs: Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Publié dans: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Numéro 32, 2024, Page(s) 12
Éditeur: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Auteurs: E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Publié dans: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Numéro May 9-12, 2022, 2022, Page(s) 243-246
Éditeur: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Auteurs: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Publié dans: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Éditeur: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Auteurs: E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Publié dans: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Éditeur: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Auteurs: M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Publié dans: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Éditeur: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Auteurs: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Publié dans: Proceedings of the Reliability Physics Symposium (IRPS), Numéro 2023, 2023, Page(s) 1-5
Éditeur: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Auteurs: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Publié dans: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Éditeur: IEEE
DOI: 10.1109/apec43580.2023.10131351

Non-peer reviewed articles (7)

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Auteurs: Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Publié dans: Journal of Semiconductors, Numéro 45, 2024, Page(s) 032501, ISSN 1674-4926
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Auteurs: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Publié dans: IEEE Electron Device Letters, Numéro 44, 2024, Page(s) 388-391, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

Auteurs: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Publié dans: MRS Advances, Numéro 7, 2023, Page(s) 1499-1503, ISSN 2059-8521
Éditeur: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Auteurs: Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Publié dans: IEEE Transactions on Electron Devices, Numéro 71, 2024, Page(s) 1553-1560, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

Auteurs: Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Publié dans: physica status solidi (a), 2024, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

Auteurs: Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Publié dans: Electronics, Numéro 13, 2024, Page(s) 294, ISSN 2079-9292
Éditeur: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Auteurs: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: Microelectronics Reliability, Numéro 138, 2023, Page(s) 114644, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Peer reviewed articles (13)

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Auteurs: Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publié dans: Journal of Physics D: Applied Physics, Numéro 57, 2024, Page(s) 433002, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Auteurs: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Publié dans: IEEE Transactions on Power Electronics, Numéro 39, 2024, Page(s) 14295-14303, ISSN 0885-8993
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Auteurs: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Publié dans: Applied Physics Express, Numéro 17, 2023, Page(s) 016503, ISSN 1882-0778
Éditeur: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Auteurs: Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Publié dans: Micromachines, Numéro 15, 2024, Page(s) 1157, ISSN 2072-666X
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN

Auteurs: Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Publié dans: Journal of Applied Physics, Numéro 135, 2024, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Auteurs: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Publié dans: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Numéro Volume 11, issue 12, 2022, Page(s) 1818, ISSN 2079-9292
Éditeur: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications

Auteurs: Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Publié dans: IET Power Electronics, Numéro 16, 2023, Page(s) 2482-2491, ISSN 1755-4535
Éditeur: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

Auteurs: Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Publié dans: physica status solidi (b), 2024, ISSN 0370-1972
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Auteurs: Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Publié dans: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Auteurs: M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: IEEE Transactions on Electron Devices, Numéro 71, 2024, Page(s) 1344-1355, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al₂O₃/GaN MOS Capacitors

Auteurs: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Publié dans: IEEE Transactions on Electron Devices, Numéro 71, 2024, Page(s) 1561-1566, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Auteurs: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Publié dans: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Éditeur: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Auteurs: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Publié dans: Semiconductor Science and Technology, Numéro Volume 38, Number 1, 2022, Page(s) 015006, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Other (1)

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Auteurs: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Publié dans: Compound semiconductor week 2023, 2023
Éditeur: HAL