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Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Project website, Twitter account and YouTube Channel (opens in new window)

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 3 (opens in new window)

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1 (opens in new window)

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2 (opens in new window)

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publications

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Author(s): J. Ziegler (Bosch)
Published in: 2022
Publisher: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Author(s): Andrea Del Fiol (IUNET-UNIPD)
Published in: 2023
Publisher: Università degli Studi di Padova

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques (opens in new window)

Author(s): M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Published in: International Reliability Physics Symposium 2023, Issue Yearly, 2023, ISBN 978-1-6654-5672-2
Publisher: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Author(s): M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: NanoInnovation 2024, 2024
Publisher: NanoInnovation

GaN industrialization: From lateral to vertical

Author(s): C. Huber (Bosch)
Published in: 2022
Publisher: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) (opens in new window)

Author(s): Nicolò Zagni
Published in: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Page(s) 1-3
Publisher: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices (opens in new window)

Author(s): Sondre Michler (SIL)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project (opens in new window)

Author(s): C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Published in: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Issue 2023, 2023, Page(s) 1-6
Publisher: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Author(s): M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: GaN Marathon 2024, 2024
Publisher: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Author(s): E. Brandl
Published in: SEMICON Europe 2023, 2023
Publisher: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Author(s): J. Baringhaus (Bosch)
Published in: 2023
Publisher: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Author(s): Sven Besendörfer (FhG)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Author(s): I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), Issue 2023, 2023
Publisher: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates (opens in new window)

Author(s): Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Published in: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Publisher: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices (opens in new window)

Author(s): JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Published in: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Page(s) 1-4
Publisher: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices (opens in new window)

Author(s): Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Published in: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Page(s) 99-104, ISBN 978-1-6654-8900-3
Publisher: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Author(s): E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Published in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Publisher: CS ManTech

Progess in Magnesium implant into GaN

Author(s): Stéphane Morata (IBS)
Published in: GMM User meeting IISB may 2023, 2022
Publisher: FhG

GaN-based power devices: physics, reliability and perspectives (opens in new window)

Author(s): M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Published in: AIP Journal of Applied Physics, 2021
Publisher: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors (opens in new window)

Author(s): Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Published in: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Issue Yearly, 2023, Page(s) pp 1-8
Publisher: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Author(s): M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: EMRS Fall Meeting 2024, 2024
Publisher: EMRS

GaN Vertical Devices: challenges for high performance and stability

Author(s): M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Publisher: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Author(s): C. Huber (Bosch)
Published in: IC-MPPE, 2022
Publisher: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si (opens in new window)

Author(s): M. Henn, C. Huber (Bosch)
Published in: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Publisher: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser (opens in new window)

Author(s): Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Published in: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Issue 32, 2024, Page(s) 12
Publisher: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Author(s): E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Published in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Issue May 9-12, 2022, 2022, Page(s) 243-246
Publisher: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Author(s): C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Published in: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Publisher: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Author(s): E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Published in: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Publisher: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Author(s): M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Publisher: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques (opens in new window)

Author(s): M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Published in: Proceedings of the Reliability Physics Symposium (IRPS), Issue 2023, 2023, Page(s) 1-5
Publisher: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation (opens in new window)

Author(s): Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Published in: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Publisher: IEEE
DOI: 10.1109/apec43580.2023.10131351

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD (opens in new window)

Author(s): Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Published in: Journal of Semiconductors, Issue 45, 2024, Page(s) 032501, ISSN 1674-4926
Publisher: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes (opens in new window)

Author(s): E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Published in: IEEE Electron Device Letters, Issue 44, 2024, Page(s) 388-391, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication (opens in new window)

Author(s): F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Published in: MRS Advances, Issue 7, 2023, Page(s) 1499-1503, ISSN 2059-8521
Publisher: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO<sub>2</sub>-GaN-Interface (opens in new window)

Author(s): Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1553-1560, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO<sub>2</sub>‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors (opens in new window)

Author(s): Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Published in: physica status solidi (a), 2024, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency (opens in new window)

Author(s): Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Published in: Electronics, Issue 13, 2024, Page(s) 294, ISSN 2079-9292
Publisher: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs (opens in new window)

Author(s): M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: Microelectronics Reliability, Issue 138, 2023, Page(s) 114644, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results (opens in new window)

Author(s): Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Journal of Physics D: Applied Physics, Issue 57, 2024, Page(s) 433002, ISSN 0022-3727
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs (opens in new window)

Author(s): Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Published in: IEEE Transactions on Power Electronics, Issue 39, 2024, Page(s) 14295-14303, ISSN 0885-8993
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes (opens in new window)

Author(s): Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Published in: Applied Physics Express, Issue 17, 2023, Page(s) 016503, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices (opens in new window)

Author(s): Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Published in: Micromachines, Issue 15, 2024, Page(s) 1157, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN (opens in new window)

Author(s): Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Published in: Journal of Applied Physics, Issue 135, 2024, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Author(s): Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Published in: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Issue Volume 11, issue 12, 2022, Page(s) 1818, ISSN 2079-9292
Publisher: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications (opens in new window)

Author(s): Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Published in: IET Power Electronics, Issue 16, 2023, Page(s) 2482-2491, ISSN 1755-4535
Publisher: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics (opens in new window)

Author(s): Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Published in: physica status solidi (b), 2024, ISSN 0370-1972
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices (opens in new window)

Author(s): Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Published in: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Publisher: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (opens in new window)

Author(s): M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1344-1355, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al<sub>2</sub>O<sub>3</sub>/GaN MOS Capacitors (opens in new window)

Author(s): Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1561-1566, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion (opens in new window)

Author(s): Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Published in: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Publisher: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN (opens in new window)

Author(s): Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Published in: Semiconductor Science and Technology, Issue Volume 38, Number 1, 2022, Page(s) 015006, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Author(s): Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Published in: Compound semiconductor week 2023, 2023
Publisher: HAL

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