Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

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Project website, Twitter account and YouTube Channel

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Project newsletter year 3

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

Publications

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Author(s): J. Ziegler (Bosch)
Published in: 2022
Publisher: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Author(s): Andrea Del Fiol (IUNET-UNIPD)
Published in: 2023
Publisher: Università degli Studi di Padova

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Author(s): M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Published in: International Reliability Physics Symposium 2023, Issue Yearly, 2023, ISBN 978-1-6654-5672-2
Publisher: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Author(s): M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: NanoInnovation 2024, 2024
Publisher: NanoInnovation

GaN industrialization: From lateral to vertical

Author(s): C. Huber (Bosch)
Published in: 2022
Publisher: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

Author(s): Nicolò Zagni
Published in: 2024 8th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM), 2024, Page(s) 1-3
Publisher: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Author(s): Sondre Michler (SIL)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

Author(s): C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Published in: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Issue 2023, 2023, Page(s) 1-6
Publisher: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Author(s): M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: GaN Marathon 2024, 2024
Publisher: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Author(s): E. Brandl
Published in: SEMICON Europe 2023, 2023
Publisher: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Author(s): J. Baringhaus (Bosch)
Published in: 2023
Publisher: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Author(s): Sven Besendörfer (FhG)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Author(s): I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), Issue 2023, 2023
Publisher: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Author(s): Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Published in: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Publisher: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

Author(s): JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Published in: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Page(s) 1-4
Publisher: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices

Author(s): Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Published in: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Page(s) 99-104, ISBN 978-1-6654-8900-3
Publisher: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Author(s): E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Published in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Publisher: CS ManTech

Progess in Magnesium implant into GaN

Author(s): Stéphane Morata (IBS)
Published in: GMM User meeting IISB may 2023, 2022
Publisher: FhG

GaN-based power devices: physics, reliability and perspectives

Author(s): M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Published in: AIP Journal of Applied Physics, 2021
Publisher: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Author(s): Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss, Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Published in: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Issue Yearly, 2023, Page(s) pp 1-8
Publisher: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Author(s): M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: EMRS Fall Meeting 2024, 2024
Publisher: EMRS

GaN Vertical Devices: challenges for high performance and stability

Author(s): M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Publisher: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Author(s): C. Huber (Bosch)
Published in: IC-MPPE, 2022
Publisher: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Author(s): M. Henn, C. Huber (Bosch)
Published in: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Publisher: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Author(s): Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Published in: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Issue 32, 2024, Page(s) 12
Publisher: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Author(s): E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Published in: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Issue May 9-12, 2022, 2022, Page(s) 243-246
Publisher: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Author(s): C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Published in: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Publisher: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Author(s): E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Published in: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Publisher: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Author(s): M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Published in: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Publisher: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Author(s): M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Published in: Proceedings of the Reliability Physics Symposium (IRPS), Issue 2023, 2023, Page(s) 1-5
Publisher: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Author(s): Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Published in: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Publisher: IEEE
DOI: 10.1109/apec43580.2023.10131351

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Author(s): Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Published in: Journal of Semiconductors, Issue 45, 2024, Page(s) 032501, ISSN 1674-4926
Publisher: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Author(s): E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Published in: IEEE Electron Device Letters, Issue 44, 2024, Page(s) 388-391, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

Author(s): F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Published in: MRS Advances, Issue 7, 2023, Page(s) 1499-1503, ISSN 2059-8521
Publisher: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface

Author(s): Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1553-1560, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

Author(s): Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Published in: physica status solidi (a), 2024, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

Author(s): Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Published in: Electronics, Issue 13, 2024, Page(s) 294, ISSN 2079-9292
Publisher: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Author(s): M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: Microelectronics Reliability, Issue 138, 2023, Page(s) 114644, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Author(s): Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Journal of Physics D: Applied Physics, Issue 57, 2024, Page(s) 433002, ISSN 0022-3727
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Author(s): Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Published in: IEEE Transactions on Power Electronics, Issue 39, 2024, Page(s) 14295-14303, ISSN 0885-8993
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Author(s): Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Published in: Applied Physics Express, Issue 17, 2023, Page(s) 016503, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Author(s): Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Published in: Micromachines, Issue 15, 2024, Page(s) 1157, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Author(s): Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Published in: Journal of Applied Physics, Issue 135, 2024, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Author(s): Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Published in: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Issue Volume 11, issue 12, 2022, Page(s) 1818, ISSN 2079-9292
Publisher: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications

Author(s): Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Published in: IET Power Electronics, Issue 16, 2023, Page(s) 2482-2491, ISSN 1755-4535
Publisher: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

Author(s): Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Published in: physica status solidi (b), 2024, ISSN 0370-1972
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Author(s): Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Published in: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Publisher: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Author(s): M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1344-1355, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

Author(s): Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, Page(s) 1561-1566, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Author(s): Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Published in: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Publisher: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Author(s): Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Published in: Semiconductor Science and Technology, Issue Volume 38, Number 1, 2022, Page(s) 015006, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Author(s): Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Published in: Compound semiconductor week 2023, 2023
Publisher: HAL

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