Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Project Information

YESvGaN

Grant agreement ID: 101007229

DOI 10.3030/101007229

EC signature date 12 May 2021

Start date 1 May 2021

End date 31 October 2024

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Total cost € 26 986 082,51

EU contribution € 7 797 661,50

Coordinated by

ROBERT BOSCH GMBH
Germany

Deliverables

Websites, patent fillings, videos etc. (3)

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publications

Thesis and dissertations (2)

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Author(s): J. Ziegler (Bosch)
Published in: 2022
Publisher: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Author(s): Andrea Del Fiol (IUNET-UNIPD)
Published in: 2023
Publisher: Università degli Studi di Padova

Conference proceedings (14)

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Author(s): M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Published in: International Reliability Physics Symposium 2023, Issue Yearly, 2023, ISBN 978-1-6654-5672-2
Publisher: IEEE
DOI: 10.1109/irps48203.2023.10117719

GaN industrialization: From lateral to vertical

Author(s): C. Huber (Bosch)
Published in: 2022
Publisher: IEEE

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Author(s): Sondre Michler (SIL)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN
DOI: 10.1088/1361-6641/aca42a

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Author(s): J. Baringhaus (Bosch)
Published in: 2023
Publisher: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Author(s): Sven Besendörfer (FhG)
Published in: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Publisher: IWN

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Author(s): Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Published in: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Publisher: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Embedding Solutions for vertical SiC and GaN Power Devices

Author(s): Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Published in: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Page(s) 99-104, ISBN 978-1-6654-8900-3
Publisher: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Progess in Magnesium implant into GaN

Author(s): Stéphane Morata (IBS)
Published in: GMM User meeting IISB may 2023, 2022
Publisher: FhG

GaN-based power devices: physics, reliability and perspectives

Author(s): M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Published in: AIP Journal of Applied Physics, 2021
Publisher: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Author(s): Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Published in: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Issue Yearly, 2023, Page(s) pp 1-8
Publisher: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Author(s): C. Huber (Bosch)
Published in: IC-MPPE, 2022
Publisher: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Author(s): M. Henn, C. Huber (Bosch)
Published in: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Publisher: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Author(s): C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Published in: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Publisher: HAL

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Author(s): Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Published in: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Publisher: IEEE
DOI: 10.1109/apec43580.2023.10131351

Peer reviewed articles (3)

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Author(s): Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Published in: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Issue Volume 11, issue 12, 2022, Page(s) 1818, ISSN 2079-9292
Publisher: MDPI

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Author(s): Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Published in: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Publisher: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Author(s): Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Published in: Semiconductor Science and Technology, Issue Volume 38, Number 1, 2022, Page(s) 015006, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a