Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Informacje na temat projektu

YESvGaN

Identyfikator umowy o grant: 101007229

DOI

10.3030/101007229

Projekt został zamknięty

Data podpisania przez KE 12 Maja 2021

Data rozpoczęcia 1 Maja 2021

Data zakończenia 31 Października 2024

Finansowanie w ramach

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Koszt całkowity

€ 26 986 082,51

Wkład UE

€ 7 797 661,50

Koordynowany przez

ROBERT BOSCH GMBH
Germany

CORDIS oferuje możliwość skorzystania z odnośników do publicznie dostępnych publikacji i rezultatów projektów realizowanych w ramach programów ramowych HORYZONT.

Odnośniki do rezultatów i publikacji związanych z poszczególnymi projektami 7PR, a także odnośniki do niektórych konkretnych kategorii wyników, takich jak zbiory danych i oprogramowanie, są dynamicznie pobierane z systemu OpenAIRE .

Rezultaty

Websites, patent fillings, videos etc. (4)

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 3

The report will summarize the main findings, concepts and results of the project. The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website.

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publikacje

Thesis and dissertations (2)

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Autorzy: J. Ziegler (Bosch)
Opublikowane w: 2022
Wydawca: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Autorzy: Andrea Del Fiol (IUNET-UNIPD)
Opublikowane w: 2023
Wydawca: Università degli Studi di Padova

Conference proceedings (29)

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autorzy: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Opublikowane w: International Reliability Physics Symposium 2023, Numer Yearly, 2023, ISBN 978-1-6654-5672-2
Wydawca: IEEE
DOI: 10.1109/irps48203.2023.10117719

Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations

Autorzy: M. Fregolent, N. Zagni, C. De Santi, M. Buffolo, C. Huber, P. Pavan, G. Verzellesi, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: NanoInnovation 2024, 2024
Wydawca: NanoInnovation

GaN industrialization: From lateral to vertical

Autorzy: C. Huber (Bosch)
Opublikowane w: 2022
Wydawca: IEEE

From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

Autorzy: Nicolò Zagni
Opublikowane w: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Strona(/y) 1-3
Wydawca: IEEE
DOI: 10.1109/edtm58488.2024.10511585

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Autorzy: Sondre Michler (SIL)
Opublikowane w: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Wydawca: IWN
DOI: 10.1088/1361-6641/aca42a

Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

Autorzy: C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
Opublikowane w: PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Numer 2023, 2023, Strona(/y) 1-6
Wydawca: PCIM
DOI: 10.30420/566091002

Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric

Autorzy: M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: GaN Marathon 2024, 2024
Wydawca: University Padoca, ACME

Manufacturing next generation power devices – how temporary bonding allows wide bandgap power devices to go vertical

Autorzy: E. Brandl
Opublikowane w: SEMICON Europe 2023, 2023
Wydawca: SEMICON

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Autorzy: J. Baringhaus (Bosch)
Opublikowane w: 2023
Wydawca: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Autorzy: Sven Besendörfer (FhG)
Opublikowane w: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Wydawca: IWN

Process optimization of Fully Vertical GaN on Silicon PIN diodes

Autorzy: I. Abid1, Y. Hamdaoui, S. Michler, K. Ziouche, F. Medjdoub
Opublikowane w: 14th International Conference on Nitride Semiconductors (ICNS-14), Numer 2023, 2023
Wydawca: HAL

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Autorzy: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Opublikowane w: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Wydawca: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Confocal Micro-Raman Spectroscopy Study of Phonon-Plasmon Modes in GaN Structures for Power Devices

Autorzy: JesÚs Ortiga-Fibla, Frank Brunner, Eldad Bahat Treidel, Núria Garro, Oliver Hilt, Ana Cros
Opublikowane w: 2023 14th Spanish Conference on Electron Devices (CDE), 2023, Strona(/y) 1-4
Wydawca: IEEE
DOI: 10.1109/cde58627.2023.10339416

Embedding Solutions for vertical SiC and GaN Power Devices

Autorzy: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Opublikowane w: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Strona(/y) 99-104, ISBN 978-1-6654-8900-3
Wydawca: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

Autorzy: E. Bahat Treidel, F. Brunner, E. Brusaterra, M. Wolf, A. Thies, J. Würfl, O. Hilt
Opublikowane w: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), 2023
Wydawca: CS ManTech

Progess in Magnesium implant into GaN

Autorzy: Stéphane Morata (IBS)
Opublikowane w: GMM User meeting IISB may 2023, 2022
Wydawca: FhG

GaN-based power devices: physics, reliability and perspectives

Autorzy: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Opublikowane w: AIP Journal of Applied Physics, 2021
Wydawca: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Autorzy: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss,  Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Opublikowane w: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Numer Yearly, 2023, Strona(/y) pp 1-8
Wydawca: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

Autorzy: M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: EMRS Fall Meeting 2024, 2024
Wydawca: EMRS

GaN Vertical Devices: challenges for high performance and stability

Autorzy: M. Meneghini, M. Fregolent, N. Zagni, C. De Santi, E. Bahat Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, M. Buffolo, A. Marcuzzi, D. Favero, A. Del Fiol, G. Verzellesi, P. Pavan, G. Meneghesso, E. Zanoni
Opublikowane w: 14th International Conference on Nitride Semiconductors (ICNS-14), 2023
Wydawca: ICNS

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Autorzy: C. Huber (Bosch)
Opublikowane w: IC-MPPE, 2022
Wydawca: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Autorzy: M. Henn, C. Huber (Bosch)
Opublikowane w: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Wydawca: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Autorzy: Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk
Opublikowane w: Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX, Numer 32, 2024, Strona(/y) 12
Wydawca: SPIE
DOI: 10.1117/12.3001106

Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

Autorzy: E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Opublikowane w: Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Numer May 9-12, 2022, 2022, Strona(/y) 243-246
Wydawca: CS ManTech

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Autorzy: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Opublikowane w: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Wydawca: HAL

Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices

Autorzy: E. Brusaterra, E. Bahat Treidel , A. Külberg, F. Brunner, M. Wolf, O. Hilt
Opublikowane w: International Conference on Compound Semiconductor Manufacturing Technology (CS mantech) 2024, 2024
Wydawca: CS mantech

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN MOSFETs

Autorzy: M. Henn, C. Huber, H. Rodriguez‐Alvarez, N. Kaminski
Opublikowane w: 14th International Conference on Nitride Semiconductors (ICNS-14), 2024
Wydawca: IPSS

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autorzy: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini
Opublikowane w: Proceedings of the Reliability Physics Symposium (IRPS), Numer 2023, 2023, Strona(/y) 1-5
Wydawca: IEEE
DOI: 10.1109/IRPS48203.2023.10117719

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Autorzy: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Opublikowane w: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Wydawca: IEEE
DOI: 10.1109/apec43580.2023.10131351

Non-peer reviewed articles (7)

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Autorzy: Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Opublikowane w: Journal of Semiconductors, Numer 45, 2024, Strona(/y) 032501, ISSN 1674-4926
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1674-4926/45/3/032501

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Autorzy: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
Opublikowane w: IEEE Electron Device Letters, Numer 44, 2024, Strona(/y) 388-391, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2023.3234101

Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

Autorzy: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
Opublikowane w: MRS Advances, Numer 7, 2023, Strona(/y) 1499-1503, ISSN 2059-8521
Wydawca: Springer Link
DOI: 10.1557/s43580-022-00447-4

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Autorzy: Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski
Opublikowane w: IEEE Transactions on Electron Devices, Numer 71, 2024, Strona(/y) 1553-1560, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3347208

SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

Autorzy: Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski
Opublikowane w: physica status solidi (a), 2024, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400065

Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

Autorzy: Vicente Esteve, Juan L. Bellido, José Jordán, Enrique J. Dede
Opublikowane w: Electronics, Numer 13, 2024, Strona(/y) 294, ISSN 2079-9292
Wydawca: MDPI
DOI: 10.3390/electronics13020294

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Autorzy: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: Microelectronics Reliability, Numer 138, 2023, Strona(/y) 114644, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2022.114644

Peer reviewed articles (13)

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Autorzy: Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Opublikowane w: Journal of Physics D: Applied Physics, Numer 57, 2024, Strona(/y) 433002, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ad5b6c

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Autorzy: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan
Opublikowane w: IEEE Transactions on Power Electronics, Numer 39, 2024, Strona(/y) 14295-14303, ISSN 0885-8993
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2024.3441712

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Autorzy: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Opublikowane w: Applied Physics Express, Numer 17, 2023, Strona(/y) 016503, ISSN 1882-0778
Wydawca: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ad106c

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Autorzy: Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Opublikowane w: Micromachines, Numer 15, 2024, Strona(/y) 1157, ISSN 2072-666X
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15091157

Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN

Autorzy: Liad Tadmor, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Opublikowane w: Journal of Applied Physics, Numer 135, 2024, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/5.0189543

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Autorzy: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Opublikowane w: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Numer Volume 11, issue 12, 2022, Strona(/y) 1818, ISSN 2079-9292
Wydawca: MDPI

Enhanced asymmetrical modulation for half‐bridge series resonant inverters in induction heating applications

Autorzy: Vicente Esteve, José Jordán, Enrique J. Dede, Juan L. Bellido
Opublikowane w: IET Power Electronics, Numer 16, 2023, Strona(/y) 2482-2491, ISSN 1755-4535
Wydawca: Institution of Engineering and Technology
DOI: 10.1049/pel2.12573

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

Autorzy: Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
Opublikowane w: physica status solidi (b), 2024, ISSN 0370-1972
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202400019

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Autorzy: Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
Opublikowane w: physica status solidi (RRL) – Rapid Research Letters, 2024, ISSN 1862-6254
Wydawca: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202400013

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Autorzy: M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 71, 2024, Strona(/y) 1344-1355, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3346369

Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al₂O₃/GaN MOS Capacitors

Autorzy: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Opublikowane w: IEEE Transactions on Electron Devices, Numer 71, 2024, Strona(/y) 1561-1566, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3335032

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Autorzy: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Opublikowane w: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Wydawca: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Autorzy: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Opublikowane w: Semiconductor Science and Technology, Numer Volume 38, Number 1, 2022, Strona(/y) 015006, ISSN 0268-1242
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

Other (1)

Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes

Autorzy: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
Opublikowane w: Compound semiconductor week 2023, 2023
Wydawca: HAL