Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Rezultaty

Project website, Twitter account and YouTube Channel

Project website maintained by the partners to publish project information and results Twitter account and Youtube Channel are live

Project newsletter year 1

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Project newsletter year 2

The report will summarize the main findings concepts and results of the project The document will be distributed to a broad community including relevant stakeholders and will also be available for the public on the project website

Publikacje

Elektrische Charakterisierung der Gate-Dielektrikum/GaN-Grenzfläche von MOS-Kapazitäten

Autorzy: J. Ziegler (Bosch)
Opublikowane w: 2022
Wydawca: University Stuttgart

Vertical GaN Power Devices: Characterization and Instability

Autorzy: Andrea Del Fiol (IUNET-UNIPD)
Opublikowane w: 2023
Wydawca: Università degli Studi di Padova

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Autorzy: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini
Opublikowane w: International Reliability Physics Symposium 2023, Numer Yearly, 2023, ISBN 978-1-6654-5672-2
Wydawca: IEEE
DOI: 10.1109/irps48203.2023.10117719

GaN industrialization: From lateral to vertical

Autorzy: C. Huber (Bosch)
Opublikowane w: 2022
Wydawca: IEEE

Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

Autorzy: Sondre Michler (SIL)
Opublikowane w: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Wydawca: IWN
DOI: 10.1088/1361-6641/aca42a

Vertical GaN Power Transistors for AutomotiveDrivetrain Applications

Autorzy: J. Baringhaus (Bosch)
Opublikowane w: 2023
Wydawca: ECPE

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Autorzy: Sven Besendörfer (FhG)
Opublikowane w: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany, 2022
Wydawca: IWN

Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

Autorzy: Zechun Yu, Ying Zhao Tan, Christoph F. Bayer, Hubert Rauh, Andreas Schletz, Martin März, Olav Birlem
Opublikowane w: 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 2021
Wydawca: IEEE
DOI: 10.1109/eptc53413.2021.9663890

Embedding Solutions for vertical SiC and GaN Power Devices

Autorzy: Hoang Linh Bach, Anqi Huanga, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin März (FhG IISB)
Opublikowane w: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2023, Strona(/y) 99-104, ISBN 978-1-6654-8900-3
Wydawca: IEEE
DOI: 10.1109/wipda56483.2022.9955257

Progess in Magnesium implant into GaN

Autorzy: Stéphane Morata (IBS)
Opublikowane w: GMM User meeting IISB may 2023, 2022
Wydawca: FhG

GaN-based power devices: physics, reliability and perspectives

Autorzy: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G, Verzellesi, E. Zanoni, E. Matioli
Opublikowane w: AIP Journal of Applied Physics, 2021
Wydawca: AIP
DOI: 10.1063/5.0061354

Thermal management of vertical GaN transistors

Autorzy: Lisa Mitterhuber, Verena Leitgeb, Markus Krainz, Robert Strauss, Thomas Kaden, Eldad Bahat Treidel, Frank Brunner, Christian Huber, Elke Kraker
Opublikowane w: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Numer Yearly, 2023, Strona(/y) pp 1-8
Wydawca: IEEE
DOI: 10.1109/eurosime56861.2023.10100765

Vertical GaN on foreign substrates: A new class of power transistors and its associated challenges

Autorzy: C. Huber (Bosch)
Opublikowane w: IC-MPPE, 2022
Wydawca: FFG

Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

Autorzy: M. Henn, C. Huber (Bosch)
Opublikowane w: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022
Wydawca: IEEE
DOI: 10.1109/wipdaeurope55971.2022.9936574

Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Autorzy: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)
Opublikowane w: Proceedings of the International Workshop on Nitride Semiconductors 2022, 2022
Wydawca: HAL

Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

Autorzy: Stefan Ditze, Stefan Ehrlich, Dominik Happel, Andreas Rosskopf
Opublikowane w: Applied Power Conference (APEC), 19/03/23 - 23/03/23, Orlando, FL, USA, 2023, ISBN 978-1-6654-0678-1
Wydawca: IEEE
DOI: 10.1109/apec43580.2023.10131351

A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

Autorzy: Stefan Ditze, Stefan Ehrlich, Nikolai Weitz, Marco Sauer, Frank Aßmus, Anne Sacher, Christopher Joffe, Christoph Seßler and Patrick Meißner (FhG)
Opublikowane w: MDPI electronics, special issue: Advancements in Electric Motors, Drives, Power Converters and Related Systems, Numer Volume 11, issue 12, 2022, Strona(/y) 1818, ISSN 2079-9292
Wydawca: MDPI

A Resonant Push–Pull DC–DC Converter With an Intrinsic Current Source Behavior for Radio Frequency Power Conversion

Autorzy: Nikolai Weitz; Samuel Utzelmann; Stefan Ditze; Martin März
Opublikowane w: IEEE Transactions on Power Electronics, 2022, ISSN 1941-0107
Wydawca: IEE
DOI: 10.1109/tpel.2022.3142431

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Autorzy: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt
Opublikowane w: Semiconductor Science and Technology, Numer Volume 38, Number 1, 2022, Strona(/y) 015006, ISSN 0268-1242
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6641/aca42a

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