The proliferation of Internet of Things (IoT) applications across the aerospace, automotive, power generation, and manufacturing sectors—particularly within the circular economy—has necessitated the development of electronics capable of enduring extreme operating conditions. Conventional semiconductor-based electronics frequently fail in high-temperature or high-radiation environments. To address these limitations, the i-EDGE project introduces a novel Nanoelectromechanical (NEM) switch technology platform specifically engineered for resilient edge computing.
The i-EDGE platform leverages the physical properties of NEM switches to provide robust performance characteristics that surpass traditional CMOS limitations:
• Thermal Resilience: Reliable operation in ambient temperatures reaching 300°C.
• Radiation Hardness: Demonstrated resistance to ionizing radiation doses up to 1 Mrad.
• Energy Efficiency: The mechanical nature of the switches ensures zero standby power consumption, significantly optimizing the energy profile of edge nodes.
The project focuses on the development of a proof-of-concept System-on-Chip (SoC) demonstrator. This integrated IoT node is comprised of the following critical subsystems:
• NEM-based FPGA: A Field-Programmable Gate Array fabric utilizing NEM switches for reconfigurable digital logic.
• Non-Volatile Memory: Integrated memory arrays for persistent data storage in harsh conditions.
• Analog Utility Blocks: Modules for sensor data readout, signal conditioning, and data communication.
• Power Management: A high-temperature capacitor bank supported by a wireless power receiver for trickle-charging.
• Data Transceiver: An optimized transceiver for efficient telemetry and external interfacing.
Beyond hardware, i-EDGE will deliver a dedicated Physical Design Kit (PDK). This software suite will provide the necessary models for design and circuit simulation, streamlining the transition from conceptual architecture to physical implementation for application engineers.
Building upon foundational research (TRL 3), i-EDGE aims to advance this technology to Technology Readiness Level 5 (TRL 5). The technology will be validated through a functional condition-monitoring application tailored for industrial IoT processes.
The i-EDGE consortium encompasses a multidisciplinary supply chain, spanning from fundamental cell design to full-scale SoC integration. By establishing a roadmap for pilot manufacturing within Europe, the project directly supports the objectives of the EU Chips Act, enhancing regional sovereignty in specialized semiconductor design and high-endurance microelectronics.
