Affordable smart GaN IC solutions as enabler of greener applications

Información del proyecto

ALL2GaN

Identificador del acuerdo de subvención: 101111890

DOI

10.3030/101111890

Fecha de la firma de la CE 17 Mayo 2023

Fecha de inicio 1 Mayo 2023

Fecha de finalización 30 Abril 2026

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 59 976 056,19

Aportación de la UE

€ 15 924 666,77

Coordinado por

INFINEON TECHNOLOGIES AUSTRIA AG
Austria

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Websites, patent fillings, videos etc. (1)

Website

Logo and Website available and online (T7.2.1)

Documents, reports (1)

Communication, Dissemination, Market & Stakeholder Plan

Strategic outline of the Communication & Dissemination Plan (updates during annual general assemblies), First set of market analysis and stakeholder identification (T7.2.1)

Publicaciones

Conference proceedings (10)

Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model

Autores: Daniel Ríos Linares, Miguel Astudillo Martínez, Miroslav Vasić
Publicado en: IEEE APEC, 2024, ISSN 2470-6647
Editor: IEEE
DOI: 10.1109/APEC48139.2024.10509318

A 39.5 dBm GaN Doherty Amplifier MMIC with Phase Control for Ka-band Space Applications

Autores: J. Romero Lopera; M. Gadringer; E. Leitgeb; H. Paulitsch; W. Bösch
Publicado en: 2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, ISBN 978-2-87487-073-6
Editor: IEEE Xplore
DOI: 10.23919/EuMIC58042.2023.10288798

Capacitive Based Isolated Resonant Switched Capacitor Solid State DC Transformer

Autores: Catalin Muntean, Miguel Astudillo Martínez, Diego Serrano, Miroslav Vasić
Publicado en: IEEE APEC, 2024, ISSN 2470-6647
Editor: IEEE
DOI: 10.1109/APEC48139.2024.10509422

Development of a Python-Based MasterCurveCreator Tool for Viscoelastic Materials

Autores: H. Sharma, J. Albrecht, T. D. Horn, R. Pantou, S. Rzepka.,
Publicado en: Smart Sytem Integration Conference, 2025
Editor: SSI

A 5G FR1 43.5 dBm GaN Hybrid Doherty Power Amplifier with Dynamic Auxiliary Gate Voltage for Enhanced Gain at Saturation

Autores: Abdolhamid Noori, Jorge Julian Moreno Rubio, Christian Fager, Gregor Lasser
Publicado en: 2025 16th German Microwave Conference (GeMiC), 2025, ISSN 2167-8022
Editor: IEEE
DOI: 10.23919/GEMIC64734.2025.10979016

A Comparative Analysis of GaN, SiC, and Si Transistors in kW-range Synchronous Converters

Autores: Lars van Eeuwijk, Bart Bokmans, Bas Vermulst
Publicado en: 2024 IEEE 9th Southern Power Electronics Conference (SPEC), 2025, ISSN 2832-2983
Editor: IEEE
DOI: 10.1109/SPEC62217.2024.10892938

Physics-of-Failure based Lifetime Prediction for Power Electronics under Mission Profile Load Conditions

Autores: Albrecht Jain, Horn Tobias Daniel, Leonhard Hertenstein, Rzepka Sven
Publicado en: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2025, ISSN 2833-8596
Editor: IEEE
DOI: 10.1109/EUROSIME65125.2025.11006588

Influence of Reducing the Load Level of Mission Profiles on the Remaining Useful Life of a TO220 Analyzed with a Surrogate Model

Autores: Tobias Daniel Horn, Jan Albrecht, Sven Rzepka
Publicado en: PHM Society European Conference, Edición 8, 2024, ISSN 2325-016X
Editor: PHM Society
DOI: 10.36001/PHME.2024.V8I1.3979

A 10 W GaN/Si Doherty Power Amplifier Designed for 15 GHz 6G Band with 8 dB Backoff Efficiency

Autores: Hossein Zaheri, Rob Vissers, Han Zhou, Gregor Lasser
Publicado en: 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2025, ISSN 2689-5498
Editor: IEEE
DOI: 10.1109/INMMIC64198.2025.10975657

Magnetic Optimization for Three-Phase LLC Converters

Autores: Daniel Rios Linares; Alberto Delgado Exposito; Miroslav Vasic
Publicado en: PCIM Europe, 2023, ISBN 978-3-8007-6091-6
Editor: VDE
DOI: 10.30420/566091133

Peer reviewed articles (10)

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Autores: Ze F. Scales, Christian Koller, Liverios Lymperakis, Michael Nelhiebel, Michael Stoeger-Pollach
Publicado en: Journal of Applied Physics, Edición 136, 2025, ISSN 0021-8979
Editor: AIP Publishing
DOI: 10.1063/5.0213275

Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs

Autores: D. Wieland, B. Butej, M. Stabentheiner, C. Koller, D. Pogany, C. Ostermaier
Publicado en: Microelectronics Reliability, Edición 169, 2025, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/J.MICROREL.2025.115722

Floating Capacitor Integrated DAB for Single-Phase, Single-Stage PFC in Wireless Battery Charging Application

Autores: I. Alzuguren, A. Garcia-Bediaga, A. Avila, A. Rujas and M. Vasić
Publicado en: IEEE Open Journal of Power Electronics, Edición Volume 4, 2023, 2023, ISSN 2644-1314
Editor: IEEE
DOI: 10.1109/OJPEL.2023.3313314

Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity

Autores: Matthias Moser, Mamta Pradhan, Ikram Ul Haq Emal, Satabdi Bastia, Mathias Kaschel, Kevin Edelmann, Ingmar Kallfass, Joachim N. Burghartz
Publicado en: Power Electronic Devices and Components, Edición 10, 2025, ISSN 2772-3704
Editor: Elsevier BV
DOI: 10.1016/J.PEDC.2025.100076

IEEE Transactions on Power Electronics

Autores: Ander Udabe; Igor Baraia-Etxaburu; David Garrido Diez
Publicado en: IEEE Transactions on Power Electronics, 2025, ISSN 0885-8993
Editor: IEEE
DOI: 10.1109/TPEL.2025.3532604

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78kW/l

Autores: Remco van Erp, Nirmana Perera, Luca Nela, Ibrahim Osama Elhagali, Hongkeng Zhu, and Elison Matioli
Publicado en: IEEE Transactions on Power Electronics, 2024, ISSN 0885-8993
Editor: IEEE
DOI: 10.1109/TPEL.2024.3396508

A Delta-Sigma Modulated Power Converter With Inherent Zero-Voltage Switching

Autores: Bart F. J. Bokmans; Bas J. D. Vermulst; Jan M. Schellekens; Henk Huisman
Publicado en: IEEE Open Journal of Power Electronics, Edición volume 5, 2024, ISSN 2644-1314
Editor: IEEE
DOI: 10.1109/OJPEL.2024.3359848

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Autores: S. Kumar , K. Geens , A. Vohra , D. Wellekens , D. Cingu , E. Fabris , T. Cosnier, H. Hahn , B. Bakeroot , N. Posthuma , R. Langer, and S. Decoutere
Publicado en: IEEE Electron Device Letters, Edición Volume: 45, Edición: 4,, 2024, ISSN 0741-3106
Editor: IEEE
DOI: 10.1109/LED.2024.3361164

Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop

Autores: Zhebie Lu, Francesco Iannuzzo
Publicado en: Microelectronics Reliability, 2023, ISSN 0026-2714
Editor: Elsevier
DOI: 10.1016/j.microrel.2023.115158

In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay

Autores: Zhebie Lu, Francesco Iannuzzo
Publicado en: IEEE Transactions on Power Electronics, Edición 39, 2024, ISSN 0885-8993
Editor: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TPEL.2024.3354166