Affordable smart GaN IC solutions as enabler of greener applications

Risultati finali

Communication, Dissemination, Market & Stakeholder Plan

Strategic outline of the Communication & Dissemination Plan (updates during annual general assemblies), First set of market analysis and stakeholder identification (T7.2.1)

Pubblicazioni

Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model

Autori: Daniel Ríos Linares, Miguel Astudillo Martínez, Miroslav Vasić
Pubblicato in: IEEE APEC, 2024, ISSN 2470-6647
Editore: IEEE
DOI: 10.1109/APEC48139.2024.10509318

Ku-Band Doherty Power Amplifier with Differential Power Combiner in an Advanced GaN-on-Si HEMT Technology for 6G FR3 Applications

Autori: Abdolhamid Noori, Jorge Moreno Rubio, Christoph Wagner, Christian Fager, Gregor Lasser
Pubblicato in: 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT), 2026
Editore: IEEE
DOI: 10.1109/IMSRFTT43070.2026.11602540

A 39.5 dBm GaN Doherty Amplifier MMIC with Phase Control for Ka-band Space Applications

Autori: J. Romero Lopera; M. Gadringer; E. Leitgeb; H. Paulitsch; W. Bösch
Pubblicato in: 2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, ISBN 978-2-87487-073-6
Editore: IEEE Xplore
DOI: 10.23919/EuMIC58042.2023.10288798

Impact of AlGaN back barrier on drain current recovery in p-GaN based GaN HEMTs subjected to semi-ON stress

Autori: Roland Strieder, Rajarshi Roy Chaudhuri, Boris Butej, Manuel Stabentheiner, Bernhard Ruch, Christian Koller, Clemens Ostermaier, Dionyz Pogany, and Michael Waltl
Pubblicato in: WOCSDICE - EXMATEC 2026, 2026
Editore: Polish Academy of Science

Random telegraph noise related to extended defects in p-GaN7n-AlGaN diodes on GaN on Si substrate

Autori: Rajarshi Roy Chaudhuri, Hubert, Rockermeier, Alexander Simko, Manuel Stabentheiner, Michael Waltl, Clemens Ostermeier and Dionyz Pogany
Pubblicato in: Wocsdice Exmatec 2026, 2026
Editore: Polish Academy of Science

A Compact 40 dBm GaN/SiC MMIC Doherty Power Amplifier at FR3 Band for 6G Applications

Autori: Hossein Zaheri, Gregor Lasser
Pubblicato in: 2025 Asia-Pacific Microwave Conference (APMC), 2026
Editore: IEEE
DOI: 10.1109/APMC65046.2025.11379002

Reliability Evaluation of 650 V E-Mode GaN Devices Under HTRB and H3TRB Stress

Autori: Mateja Novak, Kaichen Zhang, Senyu Du, Arlene Rementeria, Shuai Zhao, Dao Zhou, Francesco Iannuzzo
Pubblicato in: 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 - ECCE Asia), 2026
Editore: IEEE
DOI: 10.23919/IPEC-NAGASAKI2026-EC64663.2026.11596938

A 16 W, 8 dB Output Back-Off Doherty Power Amplifier in GaN on Si MMIC Technology for FR3

Autori: Abdolhamid Noori, Hossein Zaheri, Christian Schuberth, Helmut Brech, Christoph Wagner, Christian Fager, Gregor Lasser
Pubblicato in: 2026 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), 2026
Editore: IEEE
DOI: 10.1109/PAWR69496.2026.11408585

SIC POWER TRENCHMOS TRANSISTOR UNDER HARSH REPETITIVE SWITCHING CONDITIONS

Autori: Marek, J., Kozárik, J., Kovács, K., Matus, M., Minarik, M., & Hanic, M.
Pubblicato in: 13th International Conference on Advances in Electronic and Photonic Technologies, 201–204, 2025
Editore: Zedis
DOI: 10.5281/ZENODO.23558355

How Substrate Choice Triggers Sintering-Induced Fracture in Wide- Bandgap Assemblies

Autori: Dr. Benjamin Fabian, Frank Herbert, Robert Miller, Marco Müller, Dr. Sebastian Fritzsche, Abhinay Nallam
Pubblicato in: CIPS 2026, 2026, ISBN 978-3-8007-6760-1
Editore: VDE

Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates

Autori: M. Stabentheiner, D. Tilly, T. Schinnerl, A.A. Taylor, P. Javernik, M. Novak, C. Ostermaier, D. Pogany
Pubblicato in: International Symposium for Testing and Failure Analysis, ISTFA 2024: Conference Proceedings from the 50th International Symposium for Testing and Failure Analysis, Numero 84918, 2026
Editore: ASM International
DOI: 10.31399/ASM.CP.ISTFA2024P0146

Catalyzing Innovation: Bridging System Efficiency to Fundamental Device Physics

Autori: C. Koller, M. J. Kasper, B. Butej, D. Wieland, B. Alberdi, O. Häberlen, C. Ostermaier
Pubblicato in: 2024 IEEE International Electron Devices Meeting (IEDM), 2025
Editore: IEEE
DOI: 10.1109/IEDM50854.2024.10873485

Capacitive Based Isolated Resonant Switched Capacitor Solid State DC Transformer

Autori: Catalin Muntean, Miguel Astudillo Martínez, Diego Serrano, Miroslav Vasić
Pubblicato in: IEEE APEC, 2024, ISSN 2470-6647
Editore: IEEE
DOI: 10.1109/APEC48139.2024.10509422

"""Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter"""

Autori: Manex Gondat , Asier Garcia-Bediaga, Ander Avila , Alejandro Rujas
Pubblicato in: European Conference on Power Electronics and Applications, 2025
Editore: HAL
DOI: 10.34746/EPE2025-0171

Interconnect Reliability for Single-Step Sintered Die Stack

Autori: Nikhil Gupta, Guoqi Zhang, Sebastian Quednau, Sandy Klengel, Robert Klengel, Robin Simpson, René Poelma, Nick Liu, Sebastian Fritzsche, Frank Krüeger
Pubblicato in: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), 2025
Editore: IEEE
DOI: 10.1109/ECTC51687.2025.00261

Development of a Python-Based MasterCurveCreator Tool for Viscoelastic Materials

Autori: H. Sharma, J. Albrecht, T. D. Horn, R. Pantou, S. Rzepka.,
Pubblicato in: Smart Sytem Integration Conference, 2025
Editore: SSI

DLTFS STUDY OF POWER GAN HEMTS BEFORE AND AFTER APPLIED ELECTRICAL STRESS

Autori: MATUŠ, Matej - KOZÁRIK, Jozef - MINÁRIK, Michal - MAREK, Juraj - STUCHLÍKOVÁ, Ľubica
Pubblicato in: 13th International conference on advances in electronic and photonic technologies, 2025, ISBN 978-80-554-2208-4
Editore: EDIS
DOI: 10.5281/ZENODO.23557824

Design, Performance, and HTOL Evaluation of a Monolithic 100 V / 25 A GaN IC Module

Autori: Öncü Benli-Marin-Palomo, Mert Önkol, Philippe Billet, Jef Thone, Olga Syshchyk, Ali Roshanghias, Kaneeze Noorul Ain, Mike Wens
Pubblicato in: 2026 IEEE Applied Power Electronics Conference and Exposition (APEC), 2026
Editore: IEEE
DOI: 10.1109/APEC51134.2026.11516640

A 5G FR1 43.5 dBm GaN Hybrid Doherty Power Amplifier with Dynamic Auxiliary Gate Voltage for Enhanced Gain at Saturation

Autori: Abdolhamid Noori, Jorge Julian Moreno Rubio, Christian Fager, Gregor Lasser
Pubblicato in: 2025 16th German Microwave Conference (GeMiC), 2025, ISSN 2167-8022
Editore: IEEE
DOI: 10.23919/GEMIC64734.2025.10979016

Excess leakage current and random telegraph noise due to localized defects in p-n and p-i-n diodes on GaN-on-Si substrate

Autori: Rajarshi Roy Chaudhuri, Hubert Rockermeier, Manuel Stabentheiner, Alexander Provias, Berhard Stampfer, Michael Waltl, Clemens Ostermeier, Dionyz Pogany
Pubblicato in: GaN MArathon 2026, 2026
Editore: GaN MArathon 2026
DOI: 10.34726/12691

"""Adaptative Resonant Tank of Bidirectional CLLC Resonant Converters for Electric Vehicle Charging Applications"""

Autori: Borja Prieto, Ander Avila, David Garrido, Iosu Aizpuru, Alejandro Rujas
Pubblicato in: European Conference on Power Electronics and Applications, 2025
Editore: HAL
DOI: 10.34746/EPE2025-0300

IMS-Based GaN Power Module Structure With Low Power Loop Inductance

Autori: Lars van Eeuwijk, Remco Bonten, Jan Schellekens, Bas Vermulst
Pubblicato in: 2025 IEEE 15th International Conference on Power Electronics and Drive Systems (PEDS), 2025
Editore: IEEE
DOI: 10.1109/PEDS63958.2025.11144822

A Comparative Analysis of GaN, SiC, and Si Transistors in kW-range Synchronous Converters

Autori: Lars van Eeuwijk, Bart Bokmans, Bas Vermulst
Pubblicato in: 2024 IEEE 9th Southern Power Electronics Conference (SPEC), 2025, ISSN 2832-2983
Editore: IEEE
DOI: 10.1109/SPEC62217.2024.10892938

Random telegraph noise and excess leakage current due to intrinsic defects in p-i-n diodes on GaN-on-Si substrate

Autori: R.R.Chaudhuri, H. Rockermeier, M. Stabentheiner, B.Ruch. M. Waltl, C. Ostermeier, D. Pogany
Pubblicato in: International conference on nitride semiconductors (ICNS 2025)
Editore: ICNS 15
DOI: 10.34726/11240

Experimental Dynamic Saturation Current Evaluation of 650 V GaN GITs

Autori: Borja Alberdi; Mikel Mazuela; Jon Azurza; Clemens Ostermaier; Jon San-Sebastian; Roberto Sanchez
Pubblicato in: PCIM Conference 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2025, ISBN 978-3-8007-6541-6
Editore: PCIM
DOI: 10.30420/566541207

Physics-of-Failure based Lifetime Prediction for Power Electronics under Mission Profile Load Conditions

Autori: Albrecht Jain, Horn Tobias Daniel, Leonhard Hertenstein, Rzepka Sven
Pubblicato in: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2025, ISSN 2833-8596
Editore: IEEE
DOI: 10.1109/EUROSIME65125.2025.11006588

A Wideband Low Return Loss Measurement Fixture for Load-Pull Verification of Power Transistors

Autori: Mohammadamin Kamali, Ioannis Peppas, Arezoo Abdi, Arash Arsanjani, Helmut Paulitsch, Michael Ernst Gadringer, Wolfgang Bösch
Pubblicato in: 2025 55th European Microwave Conference (EuMC), 2025
Editore: IEEE
DOI: 10.23919/EUMC65286.2025.11235276

Physics-of-Failure based Lifetime Prediction for Power Electronics under Mission Profile Load Conditions

Autori: Jan Albrecht, Tobias Daniel Horn, Leonhard Hertenstein, Sven Rzepka
Pubblicato in: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2025
Editore: IEEE
DOI: 10.1109/EUROSIME65125.2025.11006588

Influence of Reducing the Load Level of Mission Profiles on the Remaining Useful Life of a TO220 Analyzed with a Surrogate Model

Autori: Tobias Daniel Horn, Jan Albrecht, Sven Rzepka
Pubblicato in: PHM Society European Conference, Numero 8, 2024, ISSN 2325-016X
Editore: PHM Society
DOI: 10.36001/PHME.2024.V8I1.3979

1000-Hour HTRB Test on 1200 V Lateral HEMTs with Engineered p-GaN Gate

Autori: S. Kumar1, M. Borga , D. Cingu, I. Morelli , D. Wellekens , K. Geens , A. Vohra , B. Bakeroot , N. Posthuma , S. Decoutere
Pubblicato in: CS Mantech, 2025
Editore: CS Mantech

A 10 W GaN/Si Doherty Power Amplifier Designed for 15 GHz 6G Band with 8 dB Backoff Efficiency

Autori: Hossein Zaheri, Rob Vissers, Han Zhou, Gregor Lasser
Pubblicato in: 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2025, ISSN 2689-5498
Editore: IEEE
DOI: 10.1109/INMMIC64198.2025.10975657

Magnetic Optimization for Three-Phase LLC Converters

Autori: Daniel Rios Linares; Alberto Delgado Exposito; Miroslav Vasic
Pubblicato in: PCIM Europe, 2023, ISBN 978-3-8007-6091-6
Editore: VDE
DOI: 10.30420/566091133

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Autori: Ze F. Scales, Christian Koller, Liverios Lymperakis, Michael Nelhiebel, Michael Stoeger-Pollach
Pubblicato in: Journal of Applied Physics, Numero 136, 2025, ISSN 0021-8979
Editore: AIP Publishing
DOI: 10.1063/5.0213275

Quantification-Enabled Failure Mode Separation for IGBT Module Package Degradation Assessment

Autori: Xinming Yu, Jie Kong, Dazhi Wang, Dao Zhou
Pubblicato in: IEEE Transactions on Power Electronics, Numero 41, 2026, ISSN 0885-8993
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TPEL.2026.3698498

Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs

Autori: D. Wieland, B. Butej, M. Stabentheiner, C. Koller, D. Pogany, C. Ostermaier
Pubblicato in: Microelectronics Reliability, Numero 169, 2025, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/J.MICROREL.2025.115722

Analysis and Evaluation of a Bidirectional Reconfigurable C4LC Resonant Tank for Wide Voltage Gain and Load Applications

Autori: Borja Prieto, Ander Avila, David Garrido, Iosu Aizpuru, Itziar Alzuguren, Victor M. Lopez-Martin
Pubblicato in: IEEE Open Journal of Power Electronics, Numero 7, 2026, ISSN 2644-1314
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/OJPEL.2026.3715728

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Autori: Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido
Pubblicato in: Advanced Functional Materials, Numero 36, 2026, ISSN 1616-301X
Editore: Wiley
DOI: 10.1002/ADFM.77470

Floating Capacitor Integrated DAB for Single-Phase, Single-Stage PFC in Wireless Battery Charging Application

Autori: I. Alzuguren, A. Garcia-Bediaga, A. Avila, A. Rujas and M. Vasić
Pubblicato in: IEEE Open Journal of Power Electronics, Numero Volume 4, 2023, 2023, ISSN 2644-1314
Editore: IEEE
DOI: 10.1109/OJPEL.2023.3313314

Transformer-Integrated Series-Series (TISS) Resonant Tank for EV Wireless Charging application: Analysis and Comparative Study Against SS and LCC Topologies

Autori: Itziar Alzuguren, Ander Avila, Manex Gondat, Asier Garcia-Bediaga, Victor M. Lopez-Martin
Pubblicato in: IEEE Open Journal of Power Electronics, Numero 7, 2026, ISSN 2644-1314
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/OJPEL.2026.3710562

Gallium Nitride Power Devices: A State of the Art Review

Autori: Ander Udabe, Igor Baraia-Etxaburu, David Garrido Diez
Pubblicato in: IEEE Access, Numero 11, 2023, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/ACCESS.2023.3277200

Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity

Autori: Matthias Moser, Mamta Pradhan, Ikram Ul Haq Emal, Satabdi Bastia, Mathias Kaschel, Kevin Edelmann, Ingmar Kallfass, Joachim N. Burghartz
Pubblicato in: Power Electronic Devices and Components, Numero 10, 2025, ISSN 2772-3704
Editore: Elsevier BV
DOI: 10.1016/J.PEDC.2025.100076

IEEE Transactions on Power Electronics

Autori: Ander Udabe; Igor Baraia-Etxaburu; David Garrido Diez
Pubblicato in: IEEE Transactions on Power Electronics, 2025, ISSN 0885-8993
Editore: IEEE
DOI: 10.1109/TPEL.2025.3532604

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78kW/l

Autori: Remco van Erp, Nirmana Perera, Luca Nela, Ibrahim Osama Elhagali, Hongkeng Zhu, and Elison Matioli
Pubblicato in: IEEE Transactions on Power Electronics, 2024, ISSN 0885-8993
Editore: IEEE
DOI: 10.1109/TPEL.2024.3396508

A Delta-Sigma Modulated Power Converter With Inherent Zero-Voltage Switching

Autori: Bart F. J. Bokmans; Bas J. D. Vermulst; Jan M. Schellekens; Henk Huisman
Pubblicato in: IEEE Open Journal of Power Electronics, Numero volume 5, 2024, ISSN 2644-1314
Editore: IEEE
DOI: 10.1109/OJPEL.2024.3359848

Performance Evaluation of the FCI-DAB as a Single-Stage and Storage Capacitorless PFC Wireless Charger

Autori: Itziar Alzuguren, Asier Garcia-Bediaga, Ander Avila, Alejandro Rujas, Miroslav Vasić
Pubblicato in: IEEE Access, Numero 13, 2025, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/ACCESS.2025.3591847

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Autori: S. Kumar , K. Geens , A. Vohra , D. Wellekens , D. Cingu , E. Fabris , T. Cosnier, H. Hahn , B. Bakeroot , N. Posthuma , R. Langer, and S. Decoutere
Pubblicato in: IEEE Electron Device Letters, Numero Volume: 45, Numero: 4,, 2024, ISSN 0741-3106
Editore: IEEE
DOI: 10.1109/LED.2024.3361164

Electrical and Thermal Performance Comparison of IMS-Based GaN Power Module Concepts

Autori: Lars P.A. van Eeuwijk, Remco W.T. Bonten, Jan M. Schellekens, Bas J.D. Vermulst
Pubblicato in: IEEE Transactions on Power Electronics, 2026, ISSN 0885-8993
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TPEL.2026.3741709

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing <i>Dynamic GaN‐on‐Si Buffer Charging Model</i>

Autori: Boris Butej, Dominik Wieland, Dionyz Pogany, Amgad Gharib, Gregor Pobegen, Clemens Ostermaier, Christian Koller
Pubblicato in: physica status solidi (a), Numero 221, 2024, ISSN 1862-6300
Editore: Wiley
DOI: 10.1002/PSSA.202400089

Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop

Autori: Zhebie Lu, Francesco Iannuzzo
Pubblicato in: Microelectronics Reliability, 2023, ISSN 0026-2714
Editore: Elsevier
DOI: 10.1016/j.microrel.2023.115158

Short-Circuit Detection and Protection Strategies for GaN E-HEMTs in High-Power Applications: A Review

Autori: Haitz Gezala Rodero, David Garrido Díez, Iosu Aizpuru Larrañaga, Igor Baraia-Etxaburu
Pubblicato in: Electronics, Numero 14, 2025, ISSN 2079-9292
Editore: MDPI AG
DOI: 10.3390/ELECTRONICS14142875

In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay

Autori: Zhebie Lu, Francesco Iannuzzo
Pubblicato in: IEEE Transactions on Power Electronics, Numero 39, 2024, ISSN 0885-8993
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TPEL.2024.3354166

Risultati dei progetti

Risultati finali

Pubblicazioni

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