Affordable smart GaN IC solutions as enabler of greener applications

Project Information

ALL2GaN

Grant agreement ID: 101111890

DOI

10.3030/101111890

EC signature date 17 May 2023

Start date 1 May 2023

End date 30 April 2026

Funded under

• Digital, Industry and Space

Total cost

€ 59 976 056,19

EU contribution

€ 15 924 666,77

Coordinated by

INFINEON TECHNOLOGIES AUSTRIA AG
Austria

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Websites, patent fillings, videos etc. (1)

Website

Logo and Website available and online (T7.2.1)

Documents, reports (1)

Communication, Dissemination, Market & Stakeholder Plan

Strategic outline of the Communication & Dissemination Plan (updates during annual general assemblies), First set of market analysis and stakeholder identification (T7.2.1)

Publications

Conference proceedings (10)

Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model

Author(s): Daniel Ríos Linares, Miguel Astudillo Martínez, Miroslav Vasić
Published in: IEEE APEC, 2024, ISSN 2470-6647
Publisher: IEEE
DOI: 10.1109/APEC48139.2024.10509318

A 39.5 dBm GaN Doherty Amplifier MMIC with Phase Control for Ka-band Space Applications

Author(s): J. Romero Lopera; M. Gadringer; E. Leitgeb; H. Paulitsch; W. Bösch
Published in: 2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, ISBN 978-2-87487-073-6
Publisher: IEEE Xplore
DOI: 10.23919/EuMIC58042.2023.10288798

Capacitive Based Isolated Resonant Switched Capacitor Solid State DC Transformer

Author(s): Catalin Muntean, Miguel Astudillo Martínez, Diego Serrano, Miroslav Vasić
Published in: IEEE APEC, 2024, ISSN 2470-6647
Publisher: IEEE
DOI: 10.1109/APEC48139.2024.10509422

Development of a Python-Based MasterCurveCreator Tool for Viscoelastic Materials

Author(s): H. Sharma, J. Albrecht, T. D. Horn, R. Pantou, S. Rzepka.,
Published in: Smart Sytem Integration Conference, 2025
Publisher: SSI

A 5G FR1 43.5 dBm GaN Hybrid Doherty Power Amplifier with Dynamic Auxiliary Gate Voltage for Enhanced Gain at Saturation

Author(s): Abdolhamid Noori, Jorge Julian Moreno Rubio, Christian Fager, Gregor Lasser
Published in: 2025 16th German Microwave Conference (GeMiC), 2025, ISSN 2167-8022
Publisher: IEEE
DOI: 10.23919/GEMIC64734.2025.10979016

A Comparative Analysis of GaN, SiC, and Si Transistors in kW-range Synchronous Converters

Author(s): Lars van Eeuwijk, Bart Bokmans, Bas Vermulst
Published in: 2024 IEEE 9th Southern Power Electronics Conference (SPEC), 2025, ISSN 2832-2983
Publisher: IEEE
DOI: 10.1109/SPEC62217.2024.10892938

Physics-of-Failure based Lifetime Prediction for Power Electronics under Mission Profile Load Conditions

Author(s): Albrecht Jain, Horn Tobias Daniel, Leonhard Hertenstein, Rzepka Sven
Published in: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2025, ISSN 2833-8596
Publisher: IEEE
DOI: 10.1109/EUROSIME65125.2025.11006588

Influence of Reducing the Load Level of Mission Profiles on the Remaining Useful Life of a TO220 Analyzed with a Surrogate Model

Author(s): Tobias Daniel Horn, Jan Albrecht, Sven Rzepka
Published in: PHM Society European Conference, Issue 8, 2024, ISSN 2325-016X
Publisher: PHM Society
DOI: 10.36001/PHME.2024.V8I1.3979

A 10 W GaN/Si Doherty Power Amplifier Designed for 15 GHz 6G Band with 8 dB Backoff Efficiency

Author(s): Hossein Zaheri, Rob Vissers, Han Zhou, Gregor Lasser
Published in: 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2025, ISSN 2689-5498
Publisher: IEEE
DOI: 10.1109/INMMIC64198.2025.10975657

Magnetic Optimization for Three-Phase LLC Converters

Author(s): Daniel Rios Linares; Alberto Delgado Exposito; Miroslav Vasic
Published in: PCIM Europe, 2023, ISBN 978-3-8007-6091-6
Publisher: VDE
DOI: 10.30420/566091133

Peer reviewed articles (10)

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Author(s): Ze F. Scales, Christian Koller, Liverios Lymperakis, Michael Nelhiebel, Michael Stoeger-Pollach
Published in: Journal of Applied Physics, Issue 136, 2025, ISSN 0021-8979
Publisher: AIP Publishing
DOI: 10.1063/5.0213275

Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs

Author(s): D. Wieland, B. Butej, M. Stabentheiner, C. Koller, D. Pogany, C. Ostermaier
Published in: Microelectronics Reliability, Issue 169, 2025, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/J.MICROREL.2025.115722

Floating Capacitor Integrated DAB for Single-Phase, Single-Stage PFC in Wireless Battery Charging Application

Author(s): I. Alzuguren, A. Garcia-Bediaga, A. Avila, A. Rujas and M. Vasić
Published in: IEEE Open Journal of Power Electronics, Issue Volume 4, 2023, 2023, ISSN 2644-1314
Publisher: IEEE
DOI: 10.1109/OJPEL.2023.3313314

Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity

Author(s): Matthias Moser, Mamta Pradhan, Ikram Ul Haq Emal, Satabdi Bastia, Mathias Kaschel, Kevin Edelmann, Ingmar Kallfass, Joachim N. Burghartz
Published in: Power Electronic Devices and Components, Issue 10, 2025, ISSN 2772-3704
Publisher: Elsevier BV
DOI: 10.1016/J.PEDC.2025.100076

IEEE Transactions on Power Electronics

Author(s): Ander Udabe; Igor Baraia-Etxaburu; David Garrido Diez
Published in: IEEE Transactions on Power Electronics, 2025, ISSN 0885-8993
Publisher: IEEE
DOI: 10.1109/TPEL.2025.3532604

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78kW/l

Author(s): Remco van Erp, Nirmana Perera, Luca Nela, Ibrahim Osama Elhagali, Hongkeng Zhu, and Elison Matioli
Published in: IEEE Transactions on Power Electronics, 2024, ISSN 0885-8993
Publisher: IEEE
DOI: 10.1109/TPEL.2024.3396508

A Delta-Sigma Modulated Power Converter With Inherent Zero-Voltage Switching

Author(s): Bart F. J. Bokmans; Bas J. D. Vermulst; Jan M. Schellekens; Henk Huisman
Published in: IEEE Open Journal of Power Electronics, Issue volume 5, 2024, ISSN 2644-1314
Publisher: IEEE
DOI: 10.1109/OJPEL.2024.3359848

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Author(s): S. Kumar , K. Geens , A. Vohra , D. Wellekens , D. Cingu , E. Fabris , T. Cosnier, H. Hahn , B. Bakeroot , N. Posthuma , R. Langer, and S. Decoutere
Published in: IEEE Electron Device Letters, Issue Volume: 45, Issue: 4,, 2024, ISSN 0741-3106
Publisher: IEEE
DOI: 10.1109/LED.2024.3361164

Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop

Author(s): Zhebie Lu, Francesco Iannuzzo
Published in: Microelectronics Reliability, 2023, ISSN 0026-2714
Publisher: Elsevier
DOI: 10.1016/j.microrel.2023.115158

In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay

Author(s): Zhebie Lu, Francesco Iannuzzo
Published in: IEEE Transactions on Power Electronics, Issue 39, 2024, ISSN 0885-8993
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TPEL.2024.3354166