Project description
Cold-source transistor tech to improve electronic energy efficiency
The rapid growth and widespread adoption of information and communication technologies, coupled with increasing dependence, has significantly boosted global energy demand, with projections indicating a further rise of up to 20 % by the end of the decade. Innovations in transistor technologies offer a promising solution, improving sustainability and energy efficiency in electronics. However, the CMOS technologies they rely on are constrained by Boltzmann physics, limiting their available operating voltage. The EU-funded AttoSwitch project aims to overcome this challenge by developing a novel cold-source transistor technology that can surpass Boltzmann limits, leveraging the intrinsic physical properties of Dirac semimetals.
Objective
Global energy demand for information and communication technologies may reach up to 20% of total energy by the end of the decade. Innovations on transistor technologies, following Moore’s law, can in part compensate for this rise and improve sustainability by providing more energy-efficient electronics. However, the energy-efficiency of CMOS is limited by the Boltzmann physics, which sets a lower bound on the operating voltage, and thereby the power. To sustain miniaturization, and improved performance of electronics, new transistor technologies are needed that can overcome this limit.
AttoSwitch will develop a novel cold-source transistor technology that uses the intrinsically cold carrier distribution of Dirac semimetals to overcome the Boltzmann limit. The main objective is to develop a scalable Dirac transistor technology based on large-area integration of 2D and 3D Dirac materials, e.g. graphene and CoSi, and the realization of high-performance device demonstrators at technologically relevant length scales. Key demonstrators are based on graphene integrated with MoS2 and WSe2 channels, as well as novel work on 3D Dirac semimetals. Our methodology includes development of device process modules and extensive material and device characterization. Systematic modeling using new simulation frameworks plays a key part to benchmark and provide a road map for the technology. Our ambitious performance targets include a subthreshold swing of 35 mV/decade and a switching energy of 4 attojoule.
The project links to ongoing European efforts, such as the 2D-experimental pilot line, and the goals set by the European Chips Act. AttoSwitch will impact the semiconductor supply chain at the technology and materials levels, and provide ultra-energy-efficient transistors for logic and high-frequency analog integrated chip markets. Outreach to students, training of young researchers and building international cooperation will also support Europe’s competitiveness in semiconductors.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology nanotechnology nano-materials two-dimensional nanostructures graphene
- engineering and technology electrical engineering, electronic engineering, information engineering electronic engineering sensors optical sensors
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- social sciences law
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Keywords
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
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HORIZON.2.4 - Digital, Industry and Space
MAIN PROGRAMME
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HORIZON.2.4.3 - Emerging enabling technologies
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Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
HORIZON-RIA - HORIZON Research and Innovation Actions
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Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
(opens in new window) HORIZON-CL4-2023-DIGITAL-EMERGING-01-CNECT
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Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.
40125 BOLOGNA
Italy
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.