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Full qualification, testing and commercial deployment of a unique on-chip memory technology offering the highest-density embedded memory in a standard CMOS process

Project description

Highest-density on-chip memory solution in standard CMOS

Modern chips require ever-growing amounts of on-chip memory, particularly for AI and ML applications. As a result, on-chip memory dominates the area of modern chips, often occupying 75 % of the chip silicon. Today’s on-chip memory is based on static random access memory (SRAM) technology, which requires six to eight transistors to store a single bit of data. The Israeli SME RAAAM has developed a unique on-chip memory technology (GCRAM), which is fully CMOS logic-compatible and requires only three transistors to store a bit of data, offering up-to 50 % area reduction and up-to 10X better power efficiency compared to SRAM. The EIC-funded GCRAM project aims to fully qualify GCRAM technology and pave the way to mass production.

Objective

The Memory Bottleneck has become a major concern in modern Systems-on-a-Chip and hence, the size of on-chip embedded memory continues to increase, already reaching up to 75% of the total SoC real estate. However, the industry standard SRAM technology is very area-inefficient and has been facing major scaling difficulties in modern process technologies (beyond 10nm).
RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology is a unique on-chip memory solution that only requires 2-3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology. The solution is area efficient, cost-effective and can be manufactured using the standard CMOS process. Having successfully tested the technology in various nodes ranging from 180nm-16nm, RAAAM currently aims to develop, fabricate, and characterize the proposed memory technology for nodes ≤5nm and to fully qualify it for production according to industry standards

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Topic(s)

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HORIZON-EIC-ACC - HORIZON EIC Accelerator

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Call for proposal

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(opens in new window) HORIZON-EIC-2024-ACCELERATOR-02

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Coordinator

RAAAM MEMORY TECHNOLOGIES LTD
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 2 499 999,00
Address
3 SHACHAM
4951703 PETACH TIKVA
Israel

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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