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Full qualification, testing and commercial deployment of a unique on-chip memory technology offering the highest-density embedded memory in a standard CMOS process

Project description

Highest-density on-chip memory solution in standard CMOS

Modern chips require ever-growing amounts of on-chip memory, particularly for AI and ML applications. As a result, on-chip memory dominates the area of modern chips, often occupying 75 % of the chip silicon. Today’s on-chip memory is based on static random access memory (SRAM) technology, which requires six to eight transistors to store a single bit of data. The Israeli SME RAAAM has developed a unique on-chip memory technology (GCRAM), which is fully CMOS logic-compatible and requires only three transistors to store a bit of data, offering up-to 50 % area reduction and up-to 10X better power efficiency compared to SRAM. The EIC-funded GCRAM project aims to fully qualify GCRAM technology and pave the way to mass production.

Objective

The Memory Bottleneck has become a major concern in modern Systems-on-a-Chip and hence, the size of on-chip embedded memory continues to increase, already reaching up to 75% of the total SoC real estate. However, the industry standard SRAM technology is very area-inefficient and has been facing major scaling difficulties in modern process technologies (beyond 10nm).
RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology is a unique on-chip memory solution that only requires 2-3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology. The solution is area efficient, cost-effective and can be manufactured using the standard CMOS process. Having successfully tested the technology in various nodes ranging from 180nm-16nm, RAAAM currently aims to develop, fabricate, and characterize the proposed memory technology for nodes ≤5nm and to fully qualify it for production according to industry standards

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Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-EIC-ACC - HORIZON EIC Accelerator

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Call for proposal

(opens in new window) HORIZON-EIC-2024-ACCELERATOR-02

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Coordinator

RAAAM MEMORY TECHNOLOGIES LTD
Net EU contribution
€ 2 499 999,00
Address
3 SHACHAM
4951703 PETACH TIKVA
Israel
SME
Yes
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Links
Total cost
No data