Cel Among the main difficulties to overcome toward the 10 nm gate length MOSFET, many challenges are associated to the source/drain (S/D) regions. The tight constraints of dopant activation to achieve very highly doped junctions, extremely steep lateral profiling, and low contact specific resistance have motivated a renewed interest in MOSFETs architectures that integrate metallic Schottky S/D.Based on that background, the METAMOS project proposes the design, optimisation, fabrication and characterization of metallic Schottky-Barrier-like MOSFETs to solve critical problems associated to the source/drain architecture and more specifically due to the specific contact resistance at the metal (or silicide) to silicon interface. The first major objective is to develop and fully characterize advanced very low Schottky barriers (<0.1 eV) primiraly based on (but not limited to) silicides of platinum and iridium for p-type contacts and rare earth silicides (erbium, ytterbium) for n-type contacts. The second objective is to demonstrate the complete integration of metallic source/drain (S/D) in a complementary MOS technology at academic level as a test bed to operate the appropriate selection of contact materials and process flow for industrial exploitation.The third objective concentrates on the implementation of metallic S/D into bulk and SOI CMOS process cores to demonstrate the transfer from a laboratory concept to an industrially viable solution. Finally, the fourth general objective is to get a definitive answer on the ability of metallic S/D MOSFETs and of non-overlap architectures to outmatch the conventional one, based on device demonstration, wideband measurements, physical modelling and comparison with CMOS state-of-the-art and ITRS requirements.To reach this goal, the project is organized in 4 technical work packages coveringi) material engineering,ii) process integration,iii) device simulation and modelling andiv) material and device characterization. Dziedzina nauki natural scienceschemical sciencesinorganic chemistrytransition metalsnatural scienceschemical sciencesinorganic chemistrymetalloids Program(-y) FP6-NMP - Nanotechnologies and nanosciences, knowledge-based multifunctional materials and new production processes and devices: thematic priority 3 under the 'Focusing and integrating community research' of the 'Integrating and strengthening the European Research Area' specific programme 2002-2006. Temat(-y) Data not available Zaproszenie do składania wniosków Data not available System finansowania STREP - Specific Targeted Research Project Koordynator CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Wkład UE Brak danych Adres 3, Rue Michel-Ange PARIS Francja Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (5) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko INSTYTUT TECHNOLOGII ELEKTRONOWEJ Polska Wkład UE Brak danych Adres Al. Lotnikow 32/46 WARSZAWA Zobacz na mapie Koszt całkowity Brak danych PHILIPS SEMICONDUCTORS CROLLES R&D Francja Wkład UE Brak danych Adres 860 RUE JEAN MONNET 38920 CROLLES Zobacz na mapie Koszt całkowity Brak danych STMICROELECTRONICS CROLLES 2 SAS Francja Wkład UE Brak danych Adres 850 RUE JEAN MONNET 38920 CROLLES Zobacz na mapie Koszt całkowity Brak danych UNIVERSIDAD DE SALAMANCA Hiszpania Wkład UE Brak danych Adres Patio de Escuelas, 1 SALAMANCA Zobacz na mapie Koszt całkowity Brak danych UNIVERSITE CATHOLIQUE DE LOUVAIN Belgia Wkład UE Brak danych Adres 1 PLACE DE L'UNIVERSITE 1348 LOUVAIN-LA-NEUVE Zobacz na mapie Koszt całkowity Brak danych