High efficiency GaInP/GaAs Tandem wafer bonded solar cell on silicon

Project Information

HISTORIC

Grant agreement ID: 655272

DOI

10.3030/655272

Project closed

EC signature date 18 March 2015

Start date 1 June 2015

End date 31 May 2017

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost

€ 159 460,80

EU contribution

€ 159 460,80

Coordinated by

FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV
Germany

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Publications

Peer reviewed articles (2)

Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g

Author(s): Romain Cariou, Jan Benick, Paul Beutel, Nasser Razek, Christoph Flotgen, Martin Hermle, David Lackner, Stefan W. Glunz, Andreas W. Bett, Markus Wimplinger, Frank Dimroth
Published in: IEEE Journal of Photovoltaics, Issue 7/1, 2017, Page(s) 367-373, ISSN 2156-3381
Publisher: IEEE Electron Devices Society
DOI: 10.1109/JPHOTOV.2016.2629840

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

Author(s): Felix Predan, Dirk Reinwand, Romain Cariou, Markus Niemeyer, Frank Dimroth
Published in: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Issue 34/3, 2016, Page(s) 031103, ISSN 0734-2101
Publisher: American Institute of Physics
DOI: 10.1116/1.4947118