CarbON Nanotube compositE InterconneCTs

Livrables

Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects

Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects.

Report on novel interconnect architecture exploration and simulation
Wikipedia page Creation and Activation
Hierarchical models of the contacts between CNTs and Cu and between CNT and Cu-CNT interconnects and transistors, and the corresponding electro-thermal coupling

Hierarchical models of the contacts between CNTs and Cu and between CNT and CuCNT interconnects and transistors and the corresponding electrothermal coupling

Website Creation and Activation
Report on dissemination activities during last period
Intellectual Property Audit and workshop organized at t0+24

Intellectual Property Audit and workshop organized at t024

Publications

Physical Description and Analysis of Doped Carbon Nanotube Interconnects

Auteurs: J. Liang, L. Zhang, N. Azemard-Crestani, P. Nouet, A. Todri-Sanial
Publié dans: 2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Éditeur: IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)

Present and future prospects of carbon nanotube interconnects for energy efficient integrated circuits

Auteurs: Aida Todri-Sanial, Alessandro Magnani, Massimiliano de Magistris, Antonio Maffucci
Publié dans: 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2016, Page(s) 1-5, ISBN 978-1-5090-2106-2
Éditeur: IEEE
DOI: 10.1109/EuroSimE.2016.7463379

Investigation of Electrical and Thermal Properties of Carbon Nanotube Interconnects

Auteurs: A. Todri-Sanial
Publié dans: 2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Éditeur: IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)

Carbon Nanotubes for Interconnects

Auteurs: Jie Liang, Aida Todri-Sanial
Publié dans: 2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Éditeur: SISPAD 2016

Tools for Simulation Workflow Management and their Application to Interconnect Modelling

Auteurs: S. M. Amoroso, A. Pender, A. Brown, D. Reid, E. Towie, P. Asenov, C. Millar and A. Asenov
Publié dans: 2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Éditeur: SISPAD 2016

Status and Future of Advanced Interconnects and the Needs for Simulation

Auteurs: Olivier Faynot, Severine Cheramy, Maud Vinet, Sylvain Maitrejean
Publié dans: 2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Éditeur: SISPAD 2016

Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects

Auteurs: B. Uhlig, A. Dhavamani, N. Nagy, K. Lilienthal, R. Liske, R. Ramos, J. Dijon, H. Okuno, D. Kalita, J. Lee, V. Georgiev, A. Asenov, S. Amoroso, L. Wang, F. Koenemann, B. Gotsmann, G. Goncalves, B. Chen, J. Liang, R. R. Pandey, R. Chen, A. Todri-Sanial
Publié dans: 2018 IEEE International Interconnect Technology Conference (IITC), 2018, Page(s) 16-18, ISBN 978-1-5386-4337-2
Éditeur: IEEE
DOI: 10.1109/IITC.2018.8430411

Atomistic to circuit level modeling of defective doped SWCNTs with contacts for on-chip interconnect application

Auteurs: J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Publié dans: 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), 2017, Page(s) 66-67, ISBN 978-1-5386-2772-3
Éditeur: IEEE
DOI: 10.1109/NMDC.2017.8350506

A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects

Auteurs: J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. P. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Konemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. R. Pandey, A. Todri-Sanial
Publié dans: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 35.5.1-35.5.4, ISBN 978-1-5386-3559-9
Éditeur: IEEE
DOI: 10.1109/IEDM.2017.8268502

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Auteurs: Jaehyun Lee, Jie Liang, Salvatore M. Amoroso, Toufik Sadi, Liping Wang, Flamen Asenov, Andrew Pender, Dave T. Reid, Vihar P. Georgiev, Campbell Millar, Aida Todri-Sanial, Asen Asenov
Publié dans: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 153-156, ISBN 978-4-86348-610-2
Éditeur: IEEE
DOI: 10.23919/SISPAD.2017.8085287

Progress on Carbon Nanotube BEOL Interconnects.

Auteurs: Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., and Todri-Sanial, A.
Publié dans: 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018, 2018
Éditeur: IEEE

Nanoscale Scanning Probe Thermometry

Auteurs: Fabian Konemann, Morten Vollmann, Fabian Menges, I-Ju Chen, Norizzawati Mohd Ghazali, Tomohiro Yamaguchi, Koji Ishibashi, Claes Thelander, Bernd Gotsmann
Publié dans: 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2018, Page(s) 1-6, ISBN 978-1-5386-6759-0
Éditeur: IEEE
DOI: 10.1109/therminic.2018.8593312

Nanoscale Thermometry by Scanning Microscopy

Auteurs: Fabian Konemann, Morten Vollmann, Fabian Menges, Bernd Gotsmann
Publié dans: THERMINIC 2018 - 24th International Worskhop, 2018
Éditeur: THERMINIC 2018 - 24th International Worskhop

The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

Auteurs: Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov
Publié dans: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 157-160, ISBN 978-4-86348-610-2
Éditeur: IEEE
DOI: 10.23919/SISPAD.2017.8085288

Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application

Auteurs: J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Publié dans: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC), 2017
Éditeur: IEEE

Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

Auteurs: J. Liang, A. Todri-Sanial
Publié dans: GRAPHENE 2017 International Conference., 2017
Éditeur: GRAPHENE 2017 International Conference.

Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technologies.

Auteurs: J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov
Publié dans: 22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017
Éditeur: IEEE

Local thermometry of self-heated nanoscale devices

Auteurs: F. Menges, F. Motzfeld, H. Schmid, P. Mensch, M. Dittberner, S. Karg, H. Riel, B. Gotsmann
Publié dans: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 15.8.1-15.8.4, ISBN 978-1-5090-3902-9
Éditeur: IEEE
DOI: 10.1109/IEDM.2016.7838427

A hierarchical model for CNT and Cu-CNT composite interconnects: from density functional theory to circuit-level simulations

Auteurs: J. Lee, T. Sadi, Jie Liang, V. P. Georgiev, A. Todri-Sanial, and A. Asenov.
Publié dans: 2017 International Workshop on Computational Nanotechnology (IWCN), 2017
Éditeur: IEEE

Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

Auteurs: Jaehyun Lee, Salim Berrada, Fikru Adamu-Lema, Nicole Nagy, Vihar P. Georgiev, Toufik Sadi, Jie Liang, Raphael Ramos, Hamilton Carrillo-Nunez, Dipankar Kalita, Katharina Lilienthal, Marcus Wislicenus, Reeturaj Pandey, Bingan Chen, Kenneth B. K. Teo, Goncalo Goncalves, Hanako Okuno, Benjamin Uhlig, Aida Todri-Sanial, Jean Dijon, Asen Asenov
Publié dans: IEEE Transactions on Electron Devices, Numéro 65/9, 2018, Page(s) 3884-3892, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2853550

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part II: Impact of Charge Transfer Doping

Auteurs: Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Publié dans: IEEE Transactions on Electron Devices, 2018, Page(s) 1-8, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2868424

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part I: Pristine MWCNT

Auteurs: Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Publié dans: IEEE Transactions on Electron Devices, 2018, Page(s) 1-8, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2868421

Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects

Auteurs: Jie Liang, Jaehyun Lee, Salim Berrada, Vihar P. Georgiev, Reeturaj Pandey, Rongmei Chen, Asen Asenov, Aida Todri-Sanial
Publié dans: IEEE Transactions on Nanotechnology, Numéro 17/6, 2018, Page(s) 1084-1088, ISSN 1536-125X
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TNANO.2018.2802320

A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits

Auteurs: Aida Todri-Sanial, Raphael Ramos, Hanako Okuno, Jean Dijon, Abitha Dhavamani, Marcus Widlicenus, Katharina Lilienthal, Benjamin Uhlig, Toufik Sadi, Vihar Georgiev, Asen Asenov, Salvatore Amoroso, Andrew Pender, Andrew Brown, Campbell Millar, Fabian Motzfeld, Bernd Gotsmann, Jie Liang, Goncalo Goncalves, Nalin Rupesinghe, Ken Teo
Publié dans: IEEE Circuits and Systems Magazine, Numéro 17/2, 2017, Page(s) 47-62, ISSN 1531-636X
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/MCAS.2017.2689538

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