Rezultaty
Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects.
Report on novel interconnect architecture exploration and simulationWikipedia page Creation and Activation
Hierarchical models of the contacts between CNTs and Cu and between CNT and Cu-CNT interconnects and transistors, and the corresponding electro-thermal coupling
Hierarchical models of the contacts between CNTs and Cu and between CNT and CuCNT interconnects and transistors and the corresponding electrothermal coupling
Website Creation and ActivationReport on dissemination activities during last period
Intellectual Property Audit and workshop organized at t0+24
Intellectual Property Audit and workshop organized at t024
Publikacje
Autorzy:
J. Liang, L. Zhang, N. Azemard-Crestani, P. Nouet, A. Todri-Sanial
Opublikowane w:
2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Wydawca:
IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)
Autorzy:
Aida Todri-Sanial, Alessandro Magnani, Massimiliano de Magistris, Antonio Maffucci
Opublikowane w:
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2016, Strona(/y) 1-5, ISBN 978-1-5090-2106-2
Wydawca:
IEEE
DOI:
10.1109/EuroSimE.2016.7463379
Autorzy:
A. Todri-Sanial
Opublikowane w:
2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Wydawca:
IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)
Autorzy:
Jie Liang, Aida Todri-Sanial
Opublikowane w:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Wydawca:
SISPAD 2016
Autorzy:
S. M. Amoroso, A. Pender, A. Brown, D. Reid, E. Towie, P. Asenov, C. Millar and A. Asenov
Opublikowane w:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Wydawca:
SISPAD 2016
Autorzy:
Olivier Faynot, Severine Cheramy, Maud Vinet, Sylvain Maitrejean
Opublikowane w:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Wydawca:
SISPAD 2016
Autorzy:
B. Uhlig, A. Dhavamani, N. Nagy, K. Lilienthal, R. Liske, R. Ramos, J. Dijon, H. Okuno, D. Kalita, J. Lee, V. Georgiev, A. Asenov, S. Amoroso, L. Wang, F. Koenemann, B. Gotsmann, G. Goncalves, B. Chen, J. Liang, R. R. Pandey, R. Chen, A. Todri-Sanial
Opublikowane w:
2018 IEEE International Interconnect Technology Conference (IITC), 2018, Strona(/y) 16-18, ISBN 978-1-5386-4337-2
Wydawca:
IEEE
DOI:
10.1109/IITC.2018.8430411
Autorzy:
J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Opublikowane w:
2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), 2017, Strona(/y) 66-67, ISBN 978-1-5386-2772-3
Wydawca:
IEEE
DOI:
10.1109/NMDC.2017.8350506
Autorzy:
J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. P. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Konemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. R. Pandey, A. Todri-Sanial
Opublikowane w:
2017 IEEE International Electron Devices Meeting (IEDM), 2017, Strona(/y) 35.5.1-35.5.4, ISBN 978-1-5386-3559-9
Wydawca:
IEEE
DOI:
10.1109/IEDM.2017.8268502
Autorzy:
Jaehyun Lee, Jie Liang, Salvatore M. Amoroso, Toufik Sadi, Liping Wang, Flamen Asenov, Andrew Pender, Dave T. Reid, Vihar P. Georgiev, Campbell Millar, Aida Todri-Sanial, Asen Asenov
Opublikowane w:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Strona(/y) 153-156, ISBN 978-4-86348-610-2
Wydawca:
IEEE
DOI:
10.23919/SISPAD.2017.8085287
Autorzy:
Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., and Todri-Sanial, A.
Opublikowane w:
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018, 2018
Wydawca:
IEEE
Autorzy:
Fabian Konemann, Morten Vollmann, Fabian Menges, I-Ju Chen, Norizzawati Mohd Ghazali, Tomohiro Yamaguchi, Koji Ishibashi, Claes Thelander, Bernd Gotsmann
Opublikowane w:
2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2018, Strona(/y) 1-6, ISBN 978-1-5386-6759-0
Wydawca:
IEEE
DOI:
10.1109/therminic.2018.8593312
Autorzy:
Fabian Konemann, Morten Vollmann, Fabian Menges, Bernd Gotsmann
Opublikowane w:
THERMINIC 2018 - 24th International Worskhop, 2018
Wydawca:
THERMINIC 2018 - 24th International Worskhop
Autorzy:
Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov
Opublikowane w:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Strona(/y) 157-160, ISBN 978-4-86348-610-2
Wydawca:
IEEE
DOI:
10.23919/SISPAD.2017.8085288
Autorzy:
J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Opublikowane w:
12th IEEE Nanotechnology Materials and Devices Conference (NMDC), 2017
Wydawca:
IEEE
Autorzy:
J. Liang, A. Todri-Sanial
Opublikowane w:
GRAPHENE 2017 International Conference., 2017
Wydawca:
GRAPHENE 2017 International Conference.
Autorzy:
J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov
Opublikowane w:
22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017
Wydawca:
IEEE
Autorzy:
F. Menges, F. Motzfeld, H. Schmid, P. Mensch, M. Dittberner, S. Karg, H. Riel, B. Gotsmann
Opublikowane w:
2016 IEEE International Electron Devices Meeting (IEDM), 2016, Strona(/y) 15.8.1-15.8.4, ISBN 978-1-5090-3902-9
Wydawca:
IEEE
DOI:
10.1109/IEDM.2016.7838427
Autorzy:
J. Lee, T. Sadi, Jie Liang, V. P. Georgiev, A. Todri-Sanial, and A. Asenov.
Opublikowane w:
2017 International Workshop on Computational Nanotechnology (IWCN), 2017
Wydawca:
IEEE
Autorzy:
Jaehyun Lee, Salim Berrada, Fikru Adamu-Lema, Nicole Nagy, Vihar P. Georgiev, Toufik Sadi, Jie Liang, Raphael Ramos, Hamilton Carrillo-Nunez, Dipankar Kalita, Katharina Lilienthal, Marcus Wislicenus, Reeturaj Pandey, Bingan Chen, Kenneth B. K. Teo, Goncalo Goncalves, Hanako Okuno, Benjamin Uhlig, Aida Todri-Sanial, Jean Dijon, Asen Asenov
Opublikowane w:
IEEE Transactions on Electron Devices, Numer 65/9, 2018, Strona(/y) 3884-3892, ISSN 0018-9383
Wydawca:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2853550
Autorzy:
Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Opublikowane w:
IEEE Transactions on Electron Devices, 2018, Strona(/y) 1-8, ISSN 0018-9383
Wydawca:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2868424
Autorzy:
Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Opublikowane w:
IEEE Transactions on Electron Devices, 2018, Strona(/y) 1-8, ISSN 0018-9383
Wydawca:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2868421
Autorzy:
Jie Liang, Jaehyun Lee, Salim Berrada, Vihar P. Georgiev, Reeturaj Pandey, Rongmei Chen, Asen Asenov, Aida Todri-Sanial
Opublikowane w:
IEEE Transactions on Nanotechnology, Numer 17/6, 2018, Strona(/y) 1084-1088, ISSN 1536-125X
Wydawca:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TNANO.2018.2802320
Autorzy:
Aida Todri-Sanial, Raphael Ramos, Hanako Okuno, Jean Dijon, Abitha Dhavamani, Marcus Widlicenus, Katharina Lilienthal, Benjamin Uhlig, Toufik Sadi, Vihar Georgiev, Asen Asenov, Salvatore Amoroso, Andrew Pender, Andrew Brown, Campbell Millar, Fabian Motzfeld, Bernd Gotsmann, Jie Liang, Goncalo Goncalves, Nalin Rupesinghe, Ken Teo
Opublikowane w:
IEEE Circuits and Systems Magazine, Numer 17/2, 2017, Strona(/y) 47-62, ISSN 1531-636X
Wydawca:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/MCAS.2017.2689538
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