Risultati finali
Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects.
Report on novel interconnect architecture exploration and simulationWikipedia page Creation and Activation
Hierarchical models of the contacts between CNTs and Cu and between CNT and Cu-CNT interconnects and transistors, and the corresponding electro-thermal coupling
Hierarchical models of the contacts between CNTs and Cu and between CNT and CuCNT interconnects and transistors and the corresponding electrothermal coupling
Website Creation and ActivationReport on dissemination activities during last period
Intellectual Property Audit and workshop organized at t0+24
Intellectual Property Audit and workshop organized at t024
Pubblicazioni
Autori:
J. Liang, L. Zhang, N. Azemard-Crestani, P. Nouet, A. Todri-Sanial
Pubblicato in:
2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Editore:
IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)
Autori:
Aida Todri-Sanial, Alessandro Magnani, Massimiliano de Magistris, Antonio Maffucci
Pubblicato in:
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2016, Pagina/e 1-5, ISBN 978-1-5090-2106-2
Editore:
IEEE
DOI:
10.1109/EuroSimE.2016.7463379
Autori:
A. Todri-Sanial
Pubblicato in:
2016 IEEE Power and Timing Modeling, Optimization and Simulation, 2016
Editore:
IEEE Power and Timing Modeling, Optimization and Simulation (PATMOS)
Autori:
Jie Liang, Aida Todri-Sanial
Pubblicato in:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Editore:
SISPAD 2016
Autori:
S. M. Amoroso, A. Pender, A. Brown, D. Reid, E. Towie, P. Asenov, C. Millar and A. Asenov
Pubblicato in:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Editore:
SISPAD 2016
Autori:
Olivier Faynot, Severine Cheramy, Maud Vinet, Sylvain Maitrejean
Pubblicato in:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices, 2016
Editore:
SISPAD 2016
Autori:
B. Uhlig, A. Dhavamani, N. Nagy, K. Lilienthal, R. Liske, R. Ramos, J. Dijon, H. Okuno, D. Kalita, J. Lee, V. Georgiev, A. Asenov, S. Amoroso, L. Wang, F. Koenemann, B. Gotsmann, G. Goncalves, B. Chen, J. Liang, R. R. Pandey, R. Chen, A. Todri-Sanial
Pubblicato in:
2018 IEEE International Interconnect Technology Conference (IITC), 2018, Pagina/e 16-18, ISBN 978-1-5386-4337-2
Editore:
IEEE
DOI:
10.1109/IITC.2018.8430411
Autori:
J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Pubblicato in:
2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), 2017, Pagina/e 66-67, ISBN 978-1-5386-2772-3
Editore:
IEEE
DOI:
10.1109/NMDC.2017.8350506
Autori:
J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. P. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Konemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. R. Pandey, A. Todri-Sanial
Pubblicato in:
2017 IEEE International Electron Devices Meeting (IEDM), 2017, Pagina/e 35.5.1-35.5.4, ISBN 978-1-5386-3559-9
Editore:
IEEE
DOI:
10.1109/IEDM.2017.8268502
Autori:
Jaehyun Lee, Jie Liang, Salvatore M. Amoroso, Toufik Sadi, Liping Wang, Flamen Asenov, Andrew Pender, Dave T. Reid, Vihar P. Georgiev, Campbell Millar, Aida Todri-Sanial, Asen Asenov
Pubblicato in:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Pagina/e 153-156, ISBN 978-4-86348-610-2
Editore:
IEEE
DOI:
10.23919/SISPAD.2017.8085287
Autori:
Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., and Todri-Sanial, A.
Pubblicato in:
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018, 2018
Editore:
IEEE
Autori:
Fabian Konemann, Morten Vollmann, Fabian Menges, I-Ju Chen, Norizzawati Mohd Ghazali, Tomohiro Yamaguchi, Koji Ishibashi, Claes Thelander, Bernd Gotsmann
Pubblicato in:
2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2018, Pagina/e 1-6, ISBN 978-1-5386-6759-0
Editore:
IEEE
DOI:
10.1109/therminic.2018.8593312
Autori:
Fabian Konemann, Morten Vollmann, Fabian Menges, Bernd Gotsmann
Pubblicato in:
THERMINIC 2018 - 24th International Worskhop, 2018
Editore:
THERMINIC 2018 - 24th International Worskhop
Autori:
Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov
Pubblicato in:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Pagina/e 157-160, ISBN 978-4-86348-610-2
Editore:
IEEE
DOI:
10.23919/SISPAD.2017.8085288
Autori:
J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Pubblicato in:
12th IEEE Nanotechnology Materials and Devices Conference (NMDC), 2017
Editore:
IEEE
Autori:
J. Liang, A. Todri-Sanial
Pubblicato in:
GRAPHENE 2017 International Conference., 2017
Editore:
GRAPHENE 2017 International Conference.
Autori:
J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov
Pubblicato in:
22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017
Editore:
IEEE
Autori:
F. Menges, F. Motzfeld, H. Schmid, P. Mensch, M. Dittberner, S. Karg, H. Riel, B. Gotsmann
Pubblicato in:
2016 IEEE International Electron Devices Meeting (IEDM), 2016, Pagina/e 15.8.1-15.8.4, ISBN 978-1-5090-3902-9
Editore:
IEEE
DOI:
10.1109/IEDM.2016.7838427
Autori:
J. Lee, T. Sadi, Jie Liang, V. P. Georgiev, A. Todri-Sanial, and A. Asenov.
Pubblicato in:
2017 International Workshop on Computational Nanotechnology (IWCN), 2017
Editore:
IEEE
Autori:
Jaehyun Lee, Salim Berrada, Fikru Adamu-Lema, Nicole Nagy, Vihar P. Georgiev, Toufik Sadi, Jie Liang, Raphael Ramos, Hamilton Carrillo-Nunez, Dipankar Kalita, Katharina Lilienthal, Marcus Wislicenus, Reeturaj Pandey, Bingan Chen, Kenneth B. K. Teo, Goncalo Goncalves, Hanako Okuno, Benjamin Uhlig, Aida Todri-Sanial, Jean Dijon, Asen Asenov
Pubblicato in:
IEEE Transactions on Electron Devices, Numero 65/9, 2018, Pagina/e 3884-3892, ISSN 0018-9383
Editore:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2853550
Autori:
Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Pubblicato in:
IEEE Transactions on Electron Devices, 2018, Pagina/e 1-8, ISSN 0018-9383
Editore:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2868424
Autori:
Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Pubblicato in:
IEEE Transactions on Electron Devices, 2018, Pagina/e 1-8, ISSN 0018-9383
Editore:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TED.2018.2868421
Autori:
Jie Liang, Jaehyun Lee, Salim Berrada, Vihar P. Georgiev, Reeturaj Pandey, Rongmei Chen, Asen Asenov, Aida Todri-Sanial
Pubblicato in:
IEEE Transactions on Nanotechnology, Numero 17/6, 2018, Pagina/e 1084-1088, ISSN 1536-125X
Editore:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/TNANO.2018.2802320
Autori:
Aida Todri-Sanial, Raphael Ramos, Hanako Okuno, Jean Dijon, Abitha Dhavamani, Marcus Widlicenus, Katharina Lilienthal, Benjamin Uhlig, Toufik Sadi, Vihar Georgiev, Asen Asenov, Salvatore Amoroso, Andrew Pender, Andrew Brown, Campbell Millar, Fabian Motzfeld, Bernd Gotsmann, Jie Liang, Goncalo Goncalves, Nalin Rupesinghe, Ken Teo
Pubblicato in:
IEEE Circuits and Systems Magazine, Numero 17/2, 2017, Pagina/e 47-62, ISSN 1531-636X
Editore:
Institute of Electrical and Electronics Engineers
DOI:
10.1109/MCAS.2017.2689538
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