Wide band gap Innovative SiC for Advanced Power

Project Information

WInSiC4AP

Grant agreement ID: 737483

DOI

10.3030/737483

Project closed

EC signature date 19 May 2017

Start date 1 June 2017

End date 31 March 2021

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Total cost

€ 27 981 714,14

EU contribution

€ 4 121 238,19

Coordinated by

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Italy

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Websites, patent fillings, videos etc. (3)

D7a.2.1 - First WInSiC4AP International Workshop

First WInSiC4AP International Workshop

D7a.2.2 - Second WInSiC4AP International Workshop

Second WInSiC4AP International Workshop

D7a.1.1 - Project web site

Project web site

Documents, reports (4)

D7a.1.2.4 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.3 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.2 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.1 - Database of Dissemination activities

Database of Dissemination activities

Publications

Peer reviewed articles (15)

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Author(s): Clement Berger, Jean François Michaud, David Chouteau, Daniel Alquier
Published in: Materials Science Forum, Issue 963, 2019, Page(s) 502-505, ISSN 1662-9752
Publisher: Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018)
DOI: 10.4028/www.scientific.net/msf.963.502

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Author(s): Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte
Published in: Energies, Issue 12/12, 2019, Page(s) 2310, ISSN 1996-1073
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en12122310

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Author(s): Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte
Published in: Materials Science Forum, Issue 963, 2019, Page(s) 230-235, ISSN 1662-9752
Publisher: Proc. of European Conference of Silicon Carbide and Related Materials
DOI: 10.4028/www.scientific.net/msf.963.230

Thermal Annealing of High Dose P Implantation in 4H-SiC

Author(s): Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via
Published in: Materials Science Forum, Issue 963, 2019, Page(s) 399-402, ISSN 1662-9752
Publisher: Trans Tech Pub.
DOI: 10.4028/www.scientific.net/msf.963.399

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Author(s): Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via
Published in: Materials, Issue 12/20, 2019, Page(s) 3362, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma12203362

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Author(s): Daniela Cavallaro, Mario Pulvirenti, Edoardo Zanetti, Mario Giuseppe Saggio
Published in: Materials Science Forum, Issue 963, 2019, Page(s) 788-791, ISSN 1662-9752
Publisher: Trans Tech Pub
DOI: 10.4028/www.scientific.net/msf.963.788

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

Author(s): Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Published in: Materials Science in Semiconductor Processing, Issue 78, 2018, Page(s) 38-42, ISSN 1369-8001
Publisher: Pergamon Press
DOI: 10.1016/j.mssp.2017.11.024

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Author(s): Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 473-476, ISSN 1662-9752
Publisher: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.473

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Author(s): Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 357-360, ISSN 1662-9752
Publisher: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.357

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Author(s): Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 339-344, ISSN 1662-9752
Publisher: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.339

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs

Author(s): Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 285-288, ISSN 1662-9752
Publisher: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.285

Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Author(s): Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte
Published in: Nanotechnology, Issue 29/39, 2018, Page(s) 395702, ISSN 0957-4484
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aad129

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Author(s): P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte
Published in: Materials Science in Semiconductor Processing, Issue 93, 2019, Page(s) 290-294, ISSN 1369-8001
Publisher: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.017

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Author(s): S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio
Published in: Materials Science in Semiconductor Processing, Issue 97, 2019, Page(s) 62-66, ISSN 1369-8001
Publisher: Pergamon Press
DOI: 10.1016/j.mssp.2019.02.031

Nanolaminated Al 2 O 3 /HfO 2 dielectrics for silicon carbide based devices

Author(s): Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte
Published in: Journal of Vacuum Science & Technology A, Issue 38/3, 2020, Page(s) 032410, ISSN 0734-2101
Publisher: American Institute of Physics
DOI: 10.1116/1.5134662

Conference proceedings (9)

Effects of parasitic phenomena in half bridge with Super Junction MOSFETs suitable for UAV

Author(s): Luigi Abbatelli, Angelo Raciti, Rosario Scollo, Giuseppe Mauromicale, Santi Agatino Rizzo, Alfio Scuto, Domenico Nardo, Nunzio Salerno, Giovanni Susinni
Published in: 2019 AEIT International Annual Conference (AEIT), 2019, Page(s) 1-6, ISBN 978-8-8872-3745-0
Publisher: IEEE
DOI: 10.23919/aeit.2019.8893414

Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation

Author(s): Giuseppe Mauromicale, Angelo Raciti, Santi Agatino Rizzo, Giovanni Susinni, Luigi Abbatelli, Simone Buonomo, Vittorio Giuffrida, Alessandra Raffa
Published in: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Page(s) 1-6, ISBN 978-8-8872-3743-6
Publisher: IEEE
DOI: 10.23919/eeta.2019.8804487

Characterization and Modeling of BTI in SiC MOSFETs

Author(s): D. Cornigli, A. N. Tallarico, S. Reggiani, C. Fiegna, E. Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, F. Crupi
Published in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Page(s) 82-85, ISBN 978-1-7281-1539-9
Publisher: IEEE
DOI: 10.1109/essderc.2019.8901761

The key role of the SJ MOSFET with fast diode in high-end SMPS converters for telecom applications

Author(s): Domenico Nardo, Alfio Scuto, Giuseppe Sorrentino, Angelo Raciti, Santi Agatino Rizzo
Published in: 2019 AEIT International Annual Conference (AEIT), 2019, Page(s) 1-6, ISBN 978-8-8872-3745-0
Publisher: IEEE
DOI: 10.23919/aeit.2019.8893311

Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications

Author(s): M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo
Published in: Proc. of the 20th European Conference on Power Electronics and Applications, 2018
Publisher: Proc. of the 20th European Conference on Power Electronics and Applications

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

Author(s): F. Roccaforte, G. Greco, P. Fiorenza
Published in: 2018 International Semiconductor Conference (CAS), 2018, Page(s) 7-16, ISBN 978-1-5386-4482-9
Publisher: IEEE
DOI: 10.1109/smicnd.2018.8539756

HVDC Intelligent Power Switchs for aircraft power distribution

Author(s): J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella
Published in: Proc. of MEA 2019 : More Electric Aircraft, 2019
Publisher: Proc. of MEA 2019 : More Electric Aircraft

Threshold Voltage Instability in SiC Power MOSFETs

Author(s): G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso
Published in: Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
Publisher: Proc. of the PCIM European Conference 2019

WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

Author(s): Antonio Imbruglia, Mario Saggio, Salvatore Cascino, Agatino Minotti, Marco Renna, Giuseppe Gullotta, Antonio Lionetto, Stradale Primosole, Jacques Favre, Fabrizio Roccaforte, Patrick Fiorenza, Leoluca Liggio, Salvatore Frisella
Published in: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Page(s) 1-6, ISBN 978-8-8872-3743-6
Publisher: IEEE
DOI: 10.23919/eeta.2019.8804586