Wide band gap Innovative SiC for Advanced Power

Rezultaty

D7a.2.1 - First WInSiC4AP International Workshop

First WInSiC4AP International Workshop

D7a.2.2 - Second WInSiC4AP International Workshop

Second WInSiC4AP International Workshop

D7a.1.1 - Project web site

Project web site

D7a.1.2.4 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.3 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.2 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.1 - Database of Dissemination activities

Database of Dissemination activities

Publikacje

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Autorzy: Clement Berger, Jean François Michaud, David Chouteau, Daniel Alquier
Opublikowane w: Materials Science Forum, Numer 963, 2019, Strona(/y) 502-505, ISSN 1662-9752
Wydawca: Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018)
DOI: 10.4028/www.scientific.net/msf.963.502

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Autorzy: Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte
Opublikowane w: Energies, Numer 12/12, 2019, Strona(/y) 2310, ISSN 1996-1073
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en12122310

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Autorzy: Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte
Opublikowane w: Materials Science Forum, Numer 963, 2019, Strona(/y) 230-235, ISSN 1662-9752
Wydawca: Proc. of European Conference of Silicon Carbide and Related Materials
DOI: 10.4028/www.scientific.net/msf.963.230

Thermal Annealing of High Dose P Implantation in 4H-SiC

Autorzy: Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via
Opublikowane w: Materials Science Forum, Numer 963, 2019, Strona(/y) 399-402, ISSN 1662-9752
Wydawca: Trans Tech Pub.
DOI: 10.4028/www.scientific.net/msf.963.399

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Autorzy: Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via
Opublikowane w: Materials, Numer 12/20, 2019, Strona(/y) 3362, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma12203362

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Autorzy: Daniela Cavallaro, Mario Pulvirenti, Edoardo Zanetti, Mario Giuseppe Saggio
Opublikowane w: Materials Science Forum, Numer 963, 2019, Strona(/y) 788-791, ISSN 1662-9752
Wydawca: Trans Tech Pub
DOI: 10.4028/www.scientific.net/msf.963.788

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

Autorzy: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Opublikowane w: Materials Science in Semiconductor Processing, Numer 78, 2018, Strona(/y) 38-42, ISSN 1369-8001
Wydawca: Pergamon Press
DOI: 10.1016/j.mssp.2017.11.024

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

Autorzy: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte
Opublikowane w: Materials Science Forum, Numer 924, 2018, Strona(/y) 473-476, ISSN 1662-9752
Wydawca: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.473

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Autorzy: Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via
Opublikowane w: Materials Science Forum, Numer 924, 2018, Strona(/y) 357-360, ISSN 1662-9752
Wydawca: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.357

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Autorzy: Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio
Opublikowane w: Materials Science Forum, Numer 924, 2018, Strona(/y) 339-344, ISSN 1662-9752
Wydawca: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.339

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Autorzy: Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte
Opublikowane w: Materials Science Forum, Numer 924, 2018, Strona(/y) 285-288, ISSN 1662-9752
Wydawca: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.285

Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Autorzy: Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte
Opublikowane w: Nanotechnology, Numer 29/39, 2018, Strona(/y) 395702, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aad129

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Autorzy: P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte
Opublikowane w: Materials Science in Semiconductor Processing, Numer 93, 2019, Strona(/y) 290-294, ISSN 1369-8001
Wydawca: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.017

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Autorzy: S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio
Opublikowane w: Materials Science in Semiconductor Processing, Numer 97, 2019, Strona(/y) 62-66, ISSN 1369-8001
Wydawca: Pergamon Press
DOI: 10.1016/j.mssp.2019.02.031

Nanolaminated Al 2 O 3 /HfO 2 dielectrics for silicon carbide based devices

Autorzy: Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte
Opublikowane w: Journal of Vacuum Science & Technology A, Numer 38/3, 2020, Strona(/y) 032410, ISSN 0734-2101
Wydawca: American Institute of Physics
DOI: 10.1116/1.5134662

Effects of parasitic phenomena in half bridge with Super Junction MOSFETs suitable for UAV

Autorzy: Luigi Abbatelli, Angelo Raciti, Rosario Scollo, Giuseppe Mauromicale, Santi Agatino Rizzo, Alfio Scuto, Domenico Nardo, Nunzio Salerno, Giovanni Susinni
Opublikowane w: 2019 AEIT International Annual Conference (AEIT), 2019, Strona(/y) 1-6, ISBN 978-8-8872-3745-0
Wydawca: IEEE
DOI: 10.23919/aeit.2019.8893414

Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation

Autorzy: Giuseppe Mauromicale, Angelo Raciti, Santi Agatino Rizzo, Giovanni Susinni, Luigi Abbatelli, Simone Buonomo, Vittorio Giuffrida, Alessandra Raffa
Opublikowane w: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Strona(/y) 1-6, ISBN 978-8-8872-3743-6
Wydawca: IEEE
DOI: 10.23919/eeta.2019.8804487

Characterization and Modeling of BTI in SiC MOSFETs

Autorzy: D. Cornigli, A. N. Tallarico, S. Reggiani, C. Fiegna, E. Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, F. Crupi
Opublikowane w: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Strona(/y) 82-85, ISBN 978-1-7281-1539-9
Wydawca: IEEE
DOI: 10.1109/essderc.2019.8901761

The key role of the SJ MOSFET with fast diode in high-end SMPS converters for telecom applications

Autorzy: Domenico Nardo, Alfio Scuto, Giuseppe Sorrentino, Angelo Raciti, Santi Agatino Rizzo
Opublikowane w: 2019 AEIT International Annual Conference (AEIT), 2019, Strona(/y) 1-6, ISBN 978-8-8872-3745-0
Wydawca: IEEE
DOI: 10.23919/aeit.2019.8893311

Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications

Autorzy: M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo
Opublikowane w: Proc. of the 20th European Conference on Power Electronics and Applications, 2018
Wydawca: Proc. of the 20th European Conference on Power Electronics and Applications

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

Autorzy: F. Roccaforte, G. Greco, P. Fiorenza
Opublikowane w: 2018 International Semiconductor Conference (CAS), 2018, Strona(/y) 7-16, ISBN 978-1-5386-4482-9
Wydawca: IEEE
DOI: 10.1109/smicnd.2018.8539756

HVDC Intelligent Power Switchs for aircraft power distribution

Autorzy: J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella
Opublikowane w: Proc. of MEA 2019 : More Electric Aircraft, 2019
Wydawca: Proc. of MEA 2019 : More Electric Aircraft

Threshold Voltage Instability in SiC Power MOSFETs

Autorzy: G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso
Opublikowane w: Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
Wydawca: Proc. of the PCIM European Conference 2019

WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

Autorzy: Antonio Imbruglia, Mario Saggio, Salvatore Cascino, Agatino Minotti, Marco Renna, Giuseppe Gullotta, Antonio Lionetto, Stradale Primosole, Jacques Favre, Fabrizio Roccaforte, Patrick Fiorenza, Leoluca Liggio, Salvatore Frisella
Opublikowane w: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Strona(/y) 1-6, ISBN 978-8-8872-3743-6
Wydawca: IEEE
DOI: 10.23919/eeta.2019.8804586

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