Wide band gap Innovative SiC for Advanced Power

Información del proyecto

WInSiC4AP

Identificador del acuerdo de subvención: 737483

DOI 10.3030/737483

Proyecto cerrado

Fecha de la firma de la CE 19 Mayo 2017

Fecha de inicio 1 Junio 2017

Fecha de finalización 31 Marzo 2021

Financiado con arreglo a

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coste total € 27 981 714,14

Aportación de la UE € 4 121 238,19

Coordinado por

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Italy

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Websites, patent fillings, videos etc. (3)

D7a.2.1 - First WInSiC4AP International Workshop

First WInSiC4AP International Workshop

D7a.2.2 - Second WInSiC4AP International Workshop

Second WInSiC4AP International Workshop

D7a.1.1 - Project web site

Project web site

Documents, reports (4)

D7a.1.2.4 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.3 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.2 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.1 - Database of Dissemination activities

Database of Dissemination activities

Publicaciones

Peer reviewed articles (15)

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Autores: Clement Berger, Jean François Michaud, David Chouteau, Daniel Alquier
Publicado en: Materials Science Forum, Edición 963, 2019, Página(s) 502-505, ISSN 1662-9752
Editor: Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018)
DOI: 10.4028/www.scientific.net/msf.963.502

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Autores: Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte
Publicado en: Energies, Edición 12/12, 2019, Página(s) 2310, ISSN 1996-1073
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en12122310

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Autores: Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte
Publicado en: Materials Science Forum, Edición 963, 2019, Página(s) 230-235, ISSN 1662-9752
Editor: Proc. of European Conference of Silicon Carbide and Related Materials
DOI: 10.4028/www.scientific.net/msf.963.230

Thermal Annealing of High Dose P Implantation in 4H-SiC

Autores: Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via
Publicado en: Materials Science Forum, Edición 963, 2019, Página(s) 399-402, ISSN 1662-9752
Editor: Trans Tech Pub.
DOI: 10.4028/www.scientific.net/msf.963.399

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Autores: Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via
Publicado en: Materials, Edición 12/20, 2019, Página(s) 3362, ISSN 1996-1944
Editor: MDPI Open Access Publishing
DOI: 10.3390/ma12203362

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Autores: Daniela Cavallaro, Mario Pulvirenti, Edoardo Zanetti, Mario Giuseppe Saggio
Publicado en: Materials Science Forum, Edición 963, 2019, Página(s) 788-791, ISSN 1662-9752
Editor: Trans Tech Pub
DOI: 10.4028/www.scientific.net/msf.963.788

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

Autores: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Publicado en: Materials Science in Semiconductor Processing, Edición 78, 2018, Página(s) 38-42, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2017.11.024

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Autores: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte
Publicado en: Materials Science Forum, Edición 924, 2018, Página(s) 473-476, ISSN 1662-9752
Editor: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.473

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Autores: Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via
Publicado en: Materials Science Forum, Edición 924, 2018, Página(s) 357-360, ISSN 1662-9752
Editor: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.357

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Autores: Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio
Publicado en: Materials Science Forum, Edición 924, 2018, Página(s) 339-344, ISSN 1662-9752
Editor: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.339

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs

Autores: Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte
Publicado en: Materials Science Forum, Edición 924, 2018, Página(s) 285-288, ISSN 1662-9752
Editor: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.285

Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Autores: Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte
Publicado en: Nanotechnology, Edición 29/39, 2018, Página(s) 395702, ISSN 0957-4484
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aad129

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Autores: P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte
Publicado en: Materials Science in Semiconductor Processing, Edición 93, 2019, Página(s) 290-294, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.017

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Autores: S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio
Publicado en: Materials Science in Semiconductor Processing, Edición 97, 2019, Página(s) 62-66, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2019.02.031

Nanolaminated Al 2 O 3 /HfO 2 dielectrics for silicon carbide based devices

Autores: Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte
Publicado en: Journal of Vacuum Science & Technology A, Edición 38/3, 2020, Página(s) 032410, ISSN 0734-2101
Editor: American Institute of Physics
DOI: 10.1116/1.5134662

Conference proceedings (9)

Effects of parasitic phenomena in half bridge with Super Junction MOSFETs suitable for UAV

Autores: Luigi Abbatelli, Angelo Raciti, Rosario Scollo, Giuseppe Mauromicale, Santi Agatino Rizzo, Alfio Scuto, Domenico Nardo, Nunzio Salerno, Giovanni Susinni
Publicado en: 2019 AEIT International Annual Conference (AEIT), 2019, Página(s) 1-6, ISBN 978-8-8872-3745-0
Editor: IEEE
DOI: 10.23919/aeit.2019.8893414

Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation

Autores: Giuseppe Mauromicale, Angelo Raciti, Santi Agatino Rizzo, Giovanni Susinni, Luigi Abbatelli, Simone Buonomo, Vittorio Giuffrida, Alessandra Raffa
Publicado en: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Página(s) 1-6, ISBN 978-8-8872-3743-6
Editor: IEEE
DOI: 10.23919/eeta.2019.8804487

Characterization and Modeling of BTI in SiC MOSFETs

Autores: D. Cornigli, A. N. Tallarico, S. Reggiani, C. Fiegna, E. Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, F. Crupi
Publicado en: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Página(s) 82-85, ISBN 978-1-7281-1539-9
Editor: IEEE
DOI: 10.1109/essderc.2019.8901761

The key role of the SJ MOSFET with fast diode in high-end SMPS converters for telecom applications

Autores: Domenico Nardo, Alfio Scuto, Giuseppe Sorrentino, Angelo Raciti, Santi Agatino Rizzo
Publicado en: 2019 AEIT International Annual Conference (AEIT), 2019, Página(s) 1-6, ISBN 978-8-8872-3745-0
Editor: IEEE
DOI: 10.23919/aeit.2019.8893311

Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications

Autores: M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo
Publicado en: Proc. of the 20th European Conference on Power Electronics and Applications, 2018
Editor: Proc. of the 20th European Conference on Power Electronics and Applications

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

Autores: F. Roccaforte, G. Greco, P. Fiorenza
Publicado en: 2018 International Semiconductor Conference (CAS), 2018, Página(s) 7-16, ISBN 978-1-5386-4482-9
Editor: IEEE
DOI: 10.1109/smicnd.2018.8539756

HVDC Intelligent Power Switchs for aircraft power distribution

Autores: J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella
Publicado en: Proc. of MEA 2019 : More Electric Aircraft, 2019
Editor: Proc. of MEA 2019 : More Electric Aircraft

Threshold Voltage Instability in SiC Power MOSFETs

Autores: G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso
Publicado en: Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
Editor: Proc. of the PCIM European Conference 2019

WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

Autores: Antonio Imbruglia, Mario Saggio, Salvatore Cascino, Agatino Minotti, Marco Renna, Giuseppe Gullotta, Antonio Lionetto, Stradale Primosole, Jacques Favre, Fabrizio Roccaforte, Patrick Fiorenza, Leoluca Liggio, Salvatore Frisella
Publicado en: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Página(s) 1-6, ISBN 978-8-8872-3743-6
Editor: IEEE
DOI: 10.23919/eeta.2019.8804586