Wide band gap Innovative SiC for Advanced Power

Informations projet

WInSiC4AP

N° de convention de subvention: 737483

DOI

10.3030/737483

Projet clôturé

Date de signature de la CE 19 Mai 2017

Date de début 1 Juin 2017

Date de fin 31 Mars 2021

Financé au titre de

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coût total

€ 27 981 714,14

Contribution de l’UE

€ 4 121 238,19

Coordonné par

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Italy

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Websites, patent fillings, videos etc. (3)

D7a.2.1 - First WInSiC4AP International Workshop

First WInSiC4AP International Workshop

D7a.2.2 - Second WInSiC4AP International Workshop

Second WInSiC4AP International Workshop

D7a.1.1 - Project web site

Project web site

Documents, reports (4)

D7a.1.2.4 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.3 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.2 - Database of Dissemination activities

Database of Dissemination activities

D7a.1.2.1 - Database of Dissemination activities

Database of Dissemination activities

Publications

Peer reviewed articles (15)

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

Auteurs: Clement Berger, Jean François Michaud, David Chouteau, Daniel Alquier
Publié dans: Materials Science Forum, Numéro 963, 2019, Page(s) 502-505, ISSN 1662-9752
Éditeur: Proc. of European Conference of Silicon Carbide and Related Materials (ECSCRM2018)
DOI: 10.4028/www.scientific.net/msf.963.502

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Auteurs: Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte
Publié dans: Energies, Numéro 12/12, 2019, Page(s) 2310, ISSN 1996-1073
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en12122310

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Auteurs: Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte
Publié dans: Materials Science Forum, Numéro 963, 2019, Page(s) 230-235, ISSN 1662-9752
Éditeur: Proc. of European Conference of Silicon Carbide and Related Materials
DOI: 10.4028/www.scientific.net/msf.963.230

Thermal Annealing of High Dose P Implantation in 4H-SiC

Auteurs: Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni, Simona Boninelli, Nicolò Piluso, Andrea Severino, Maria Ausilia di Stefano, Simona Lorenti, Lucia Calcagno, Francesco La Via
Publié dans: Materials Science Forum, Numéro 963, 2019, Page(s) 399-402, ISSN 1662-9752
Éditeur: Trans Tech Pub.
DOI: 10.4028/www.scientific.net/msf.963.399

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Auteurs: Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via
Publié dans: Materials, Numéro 12/20, 2019, Page(s) 3362, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12203362

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Auteurs: Daniela Cavallaro, Mario Pulvirenti, Edoardo Zanetti, Mario Giuseppe Saggio
Publié dans: Materials Science Forum, Numéro 963, 2019, Page(s) 788-791, ISSN 1662-9752
Éditeur: Trans Tech Pub
DOI: 10.4028/www.scientific.net/msf.963.788

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

Auteurs: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Publié dans: Materials Science in Semiconductor Processing, Numéro 78, 2018, Page(s) 38-42, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2017.11.024

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Auteurs: Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte
Publié dans: Materials Science Forum, Numéro 924, 2018, Page(s) 473-476, ISSN 1662-9752
Éditeur: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.473

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Auteurs: Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via
Publié dans: Materials Science Forum, Numéro 924, 2018, Page(s) 357-360, ISSN 1662-9752
Éditeur: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.357

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Auteurs: Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio
Publié dans: Materials Science Forum, Numéro 924, 2018, Page(s) 339-344, ISSN 1662-9752
Éditeur: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.339

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs

Auteurs: Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte
Publié dans: Materials Science Forum, Numéro 924, 2018, Page(s) 285-288, ISSN 1662-9752
Éditeur: Scientific.Net
DOI: 10.4028/www.scientific.net/MSF.924.285

Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Auteurs: Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte
Publié dans: Nanotechnology, Numéro 29/39, 2018, Page(s) 395702, ISSN 0957-4484
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aad129

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Auteurs: P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte
Publié dans: Materials Science in Semiconductor Processing, Numéro 93, 2019, Page(s) 290-294, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.017

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Auteurs: S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio
Publié dans: Materials Science in Semiconductor Processing, Numéro 97, 2019, Page(s) 62-66, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2019.02.031

Nanolaminated Al 2 O 3 /HfO 2 dielectrics for silicon carbide based devices

Auteurs: Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte
Publié dans: Journal of Vacuum Science & Technology A, Numéro 38/3, 2020, Page(s) 032410, ISSN 0734-2101
Éditeur: American Institute of Physics
DOI: 10.1116/1.5134662

Conference proceedings (9)

Effects of parasitic phenomena in half bridge with Super Junction MOSFETs suitable for UAV

Auteurs: Luigi Abbatelli, Angelo Raciti, Rosario Scollo, Giuseppe Mauromicale, Santi Agatino Rizzo, Alfio Scuto, Domenico Nardo, Nunzio Salerno, Giovanni Susinni
Publié dans: 2019 AEIT International Annual Conference (AEIT), 2019, Page(s) 1-6, ISBN 978-8-8872-3745-0
Éditeur: IEEE
DOI: 10.23919/aeit.2019.8893414

Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation

Auteurs: Giuseppe Mauromicale, Angelo Raciti, Santi Agatino Rizzo, Giovanni Susinni, Luigi Abbatelli, Simone Buonomo, Vittorio Giuffrida, Alessandra Raffa
Publié dans: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Page(s) 1-6, ISBN 978-8-8872-3743-6
Éditeur: IEEE
DOI: 10.23919/eeta.2019.8804487

Characterization and Modeling of BTI in SiC MOSFETs

Auteurs: D. Cornigli, A. N. Tallarico, S. Reggiani, C. Fiegna, E. Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, F. Crupi
Publié dans: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Page(s) 82-85, ISBN 978-1-7281-1539-9
Éditeur: IEEE
DOI: 10.1109/essderc.2019.8901761

The key role of the SJ MOSFET with fast diode in high-end SMPS converters for telecom applications

Auteurs: Domenico Nardo, Alfio Scuto, Giuseppe Sorrentino, Angelo Raciti, Santi Agatino Rizzo
Publié dans: 2019 AEIT International Annual Conference (AEIT), 2019, Page(s) 1-6, ISBN 978-8-8872-3745-0
Éditeur: IEEE
DOI: 10.23919/aeit.2019.8893311

Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications

Auteurs: M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo
Publié dans: Proc. of the 20th European Conference on Power Electronics and Applications, 2018
Éditeur: Proc. of the 20th European Conference on Power Electronics and Applications

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

Auteurs: F. Roccaforte, G. Greco, P. Fiorenza
Publié dans: 2018 International Semiconductor Conference (CAS), 2018, Page(s) 7-16, ISBN 978-1-5386-4482-9
Éditeur: IEEE
DOI: 10.1109/smicnd.2018.8539756

HVDC Intelligent Power Switchs for aircraft power distribution

Auteurs: J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella
Publié dans: Proc. of MEA 2019 : More Electric Aircraft, 2019
Éditeur: Proc. of MEA 2019 : More Electric Aircraft

Threshold Voltage Instability in SiC Power MOSFETs

Auteurs: G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso
Publié dans: Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
Éditeur: Proc. of the PCIM European Conference 2019

WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

Auteurs: Antonio Imbruglia, Mario Saggio, Salvatore Cascino, Agatino Minotti, Marco Renna, Giuseppe Gullotta, Antonio Lionetto, Stradale Primosole, Jacques Favre, Fabrizio Roccaforte, Patrick Fiorenza, Leoluca Liggio, Salvatore Frisella
Publié dans: 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2019, Page(s) 1-6, ISBN 978-8-8872-3743-6
Éditeur: IEEE
DOI: 10.23919/eeta.2019.8804586