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Synergistic Resistive Switching of Perovskite and Silicon Carbide materials for Advanced ReRAM micro Devices

Publications

Integration of LaMnO 3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Author(s): Raquel Rodriguez-Lamas, Dolors Pla, Odette Chaix-Pluchery, Benjamin Meunier, Fabrice Wilhelm, Andrei Rogalev, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, Hervé Roussel, Michel Boudard, Carmen Jiménez, Mónica Burriel
Published in: Beilstein Journal of Nanotechnology, Issue 10, 2019, Page(s) 389-398, ISSN 2190-4286
DOI: 10.3762/bjnano.10.38

Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δ

Author(s): Benjamin Meunier, Dolors Pla, Raquel Rodriguez-Lamas, Michel Boudard, Odette Chaix-Pluchery, Eugénie Martinez, Nicolas Chevalier, Carmen Jiménez, Mónica Burriel, Olivier Renault
Published in: ACS Applied Electronic Materials, Issue 1/5, 2019, Page(s) 675-683, ISSN 2637-6113
DOI: 10.1021/acsaelm.9b00030

Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices

Author(s): Dolors Pla, Carmen Jimenez, Mónica Burriel
Published in: Advanced Materials Interfaces, Issue 4/8, 2017, Page(s) 1600974, ISSN 2196-7350
DOI: 10.1002/admi.201600974

Resistive switching in a LaMnO 3 + δ /TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

Author(s): Benjamin Meunier, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Mònica Burriel, Michel Boudard, Carmen Jiménez, Jean-Pascal Rueff, Olivier Renault
Published in: Journal of Applied Physics, Issue 126/22, 2019, Page(s) 225302, ISSN 0021-8979
DOI: 10.1063/1.5125420