3D integration technology for silicon spin qubits

Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures

Autores: F. Serra di Santa Maria, L. Contamin, B. Cardoso Paz, M. Cassé, C. Theodorou, F. Balestra, G. Ghibaudo
Publicado en: Solid-State Electronics, Edición 186, 2025, Página(s) 108175, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108175

Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

Autores: Edoardo Catapano, Gerard Ghibaudo, Mikael Casse, Tadeu Mota Frutuoso, Bruna Cardoso Paz, Thomas Bedecarrats, Agostino Apra, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet
Publicado en: IEEE Journal of the Electron Devices Society, Edición 9, 2021, Página(s) 582-590, ISSN 2168-6734
Editor: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3082201

Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot

Autores: R. Ezzouch; Simon Zihlmann; Vincent P. Michal; Jing Li; A. Apra; Benoit Bertrand; Louis Hutin; Maud Vinet; Matias Urdampilleta; Tristan Meunier; Xavier Jehl; Yann-Michel Niquet; Marc Sanquer; Silvano De Franceschi; Romain Maurand
Publicado en: https://hal.science/hal-03376661, Edición 5, 2021, ISSN 2331-7019
Editor: APS
DOI: 10.48550/arxiv.2012.15588

Controlled quantum dot array segmentation via highly tunable interdot tunnel coupling

Autores: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier
Publicado en: Applied Physics Letters, Edición 121, 2023, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/5.0105635

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Autores: Victor Elhomsy, Luca Planat, David J. Niegemann, Bruna Cardoso-Paz, Ali Badreldin, Bernhard Klemt, Vivien Thiney, Renan Lethiecq, Eric Eyraud, Matthieu C. Dartiailh, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Tristan Meunier, Nicolas Roch, Matias Urdampilleta
Publicado en: Physical Review Applied, Edición 24, 2025, ISSN 2331-7019
Editor: American Physical Society (APS)
DOI: 10.1103/sj8d-x674

Strong coupling between a photon and a hole spin in silicon

Autores: Cécile X Yu, Simon Zihlmann, José C Abadillo-Uriel, Vincent P Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Étienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Publicado en: Nature Nanotechnology, 2023, ISSN 1748-3387
Editor: Nature Publishing Group
DOI: 10.1038/s41565-023-01332-3

Semiconductor qubits in practice

Autores: Anasua Chatterjee; Paul G. Stevenson; Silvano De Franceschi; Andrea Morello; Nathalie P. de Leon; Ferdinand Kuemmeth
Publicado en: Nature Reviews Physics, Edición 7, 2020, ISSN 2522-5820
Editor: Nature Portfolio
DOI: 10.1038/s42254-021-00283-9

Charge Detection in an Array of CMOS Quantum Dots

Autores: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta
Publicado en: Physical Review Applied, Edición 14/2, 2020, ISSN 2331-7019
Editor: APS
DOI: 10.1103/physrevapplied.14.024066

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Autores: Pierre Hamonic, Martin Nurizzo, Jayshankar Nath, Matthieu C. Dartiailh, Victor Elhomsy, Mathis Fragnol, Biel Martinez, Pierre-Louis Julliard, Bruna Cardoso Paz, Mathilde Ouvrier-Buffet, Jean-Baptiste Filippini, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta
Publicado en: Nature Communications, Edición 16, 2025, ISSN 2041-1723
Editor: Nature Publishing Group
DOI: 10.1038/s41467-025-61556-w

The 2021 quantum materials roadmap

Autores: eliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V Yazyev, Erik PAM Bakkers, Jesper Nygård, Pol Forn-Díaz, Silvano De Franceschi, JW McIver, LEF Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O Valenzuela, Marius V Costache, Aurélie
Publicado en: JPhys Materials, 2021, ISSN 2515-7639
Editor: IOP Publishing, 2018-
DOI: 10.1088/2515-7639/abb74e

Optimal operation of hole spin qubits

Autores: M. Bassi, E. A. Rodríguez-Mena, B. Brun, S. Zihlmann, T. Nguyen, V. Champain, J. C. Abadillo-Uriel, B. Bertrand, H. Niebojewski, R. Maurand, Y.-M. Niquet, X. Jehl, S. De Franceschi, V. Schmitt
Publicado en: Nature Physics, Edición 22, 2026, Página(s) 75-80, ISSN 1745-2473
Editor: Nature Publishing Group
DOI: 10.1038/s41567-025-03106-1

"Tunable hole spin-photon interaction based on <math><mi mathvariant=""monospace"">g</mi></math>-matrix modulation"

Autores: V. P. Michal; J. C. Abadillo-Uriel; S. Zihlmann; R. Maurand; Y.-M. Niquet; M. Filippone
Publicado en: "Phys.Rev.B, 2023, 107 (4), pp.L041303. ⟨10.1103/PhysRevB.107.L041303⟩", Edición 1, 2023, ISSN 2469-9950
Editor: APS
DOI: 10.48550/arxiv.2204.00404

A single hole spin with enhanced coherence in natural silicon

Autores: Nicolas Piot, B Brun, Vivien Schmitt, Simon Zihlmann, VP Michal, A Apra, JC Abadillo-Uriel, Xavier Jehl, Benoit Bertrand, H Niebojewski, L Hutin, M Vinet, M Urdampilleta, Tristan Meunier, Y-M Niquet, Romain Maurand, S De Franceschi
Publicado en: Nature Nanotechnology, 2022, ISSN 1748-3387
Editor: Nature Publishing Group
DOI: 10.1038/s41565-022-01196-z

Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

Autores: Bernhard Klemt, Victor Elhomsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron Spence, Matthieu C. Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Publicado en: npj Quantum Information, Edición 9, 2023, ISSN 2056-6387
Editor: Springer Science and Business Media LLC
DOI: 10.1038/s41534-023-00776-8

Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Autores: Cameron Spence, Bruna Cardoso Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, and Matias Urdampilleta
Publicado en: Phys. Rev. Applied, 2023, ISSN 2331-7019
Editor: APS
DOI: 10.1103/physrevapplied.19.044010

The germanium quantum information route

Autores: Giordano Scappucci, Christoph Kloeffel, Floris A Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhors
Publicado en: Nature Reviews Materials, 2021, ISSN 2058-8437
Editor: Nature Portfolio
DOI: 10.1038/s41578-020-00262-z

Real-time millikelvin thermometry in a semiconductor-qubit architecture

Autores: V. Champain, V. Schmitt, B. Bertrand, H. Niebojewski, R. Maurand, X. Jehl, C.B. Winkelmann, S. De Franceschi, B. Brun
Publicado en: Physical Review Applied, Edición 21, 2024, ISSN 2331-7019
Editor: American Physical Society (APS)
DOI: 10.1103/physrevapplied.21.064039

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Autores: Vincent P. Michal; Benjamin Venitucci; Yann-Michel Niquet
Publicado en: Physical Review B, Edición 1, 2020, ISSN 2469-9950
Editor: APS
DOI: 10.1103/physrevb.103.045305

Parametric longitudinal coupling of a semiconductor charge qubit and an rf resonator

Autores: V. Champain, S. Zihlmann, A. Chessari, B. Bertrand, H. Niebojewski, É. Dumur, X. Jehl, V. Schmitt, B. Brun, C. Winkelmann, Y.M. Niquet, M. Filippone, S. De Franceschi, R. Maurand
Publicado en: Physical Review Applied, Edición 23, 2025, ISSN 2331-7019
Editor: American Physical Society (APS)
DOI: 10.1103/physrevapplied.23.034067

Scaling silicon-based quantum computing using CMOS technology

Autores: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A. S. Dzurak
Publicado en: Nature Electronics, Edición 4, 2024, Página(s) 872-884, ISSN 2520-1131
Editor: Springer Science and Business Media LLC
DOI: 10.1038/s41928-021-00681-y

Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K

Autores: David J. Niegemann, Victor El-Homsy, Baptiste Jadot, Martin Nurizzo, Bruna Cardoso-Paz, Emmanuel Chanrion, Matthieu Dartiailh, Bernhard Klemt, Vivien Thiney, Christopher Bäuerle, Pierre-André Mortemousque, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta
Publicado en: PRX Quantum, Edición 3, 2022, ISSN 2691-3399
Editor: American Physical Society (APS)
DOI: 10.1103/prxquantum.3.040335

Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots

Autores: Cameron Spence; Bruna Cardoso Paz; Bernhard Klemt; Emmanuel Chanrion; David J. Niegemann; Baptiste Jadot; Vivien Thiney; Benoit Bertrand; Heimanu Niebojewski; Pierre-André Mortemousque; Xavier Jehl; Romain Maurand; Silvano De Franceschi; Maud Vinet; Franck Balestro; Christopher Bäuerle; Yann-Michel Niquet; Tristan Meunier; Matias Urdampilleta
Publicado en: ISSN: 2331-7019, Edición 3, 2022, ISSN 2331-7019
Editor: APS
DOI: 10.48550/arxiv.2109.13557

Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Autores: F. Serra di Santa Maria, L. Contamin, M. Cassé, C. Theodorou, F. Balestra, G. Ghibaudo
Publicado en: Solid-State Electronics, Edición 192, 2025, Página(s) 108271, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108271

Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Autores: Bruna Cardoso Paz, Mikaël Cassé, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Franck Arnaud, Gérard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Publicado en: Solid-State Electronics, Edición 186, 2025, Página(s) 108071, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108071

Low-power transimpedance amplifier for cryogenic integration with quantum devices

Autores: L. Le Guevel, G. Billiot, B. Cardoso Paz, M. L. V. Tagliaferri, S. De Franceschi, R. Maurand, M. Cassé, M. Zurita, M. Sanquer, M. Vinet, X. Jehl, A. G. M. Jansen, G. Pillonnet
Publicado en: Applied Physics Reviews, Edición 7, 2025, ISSN 1931-9401
Editor: AIP Publishing LLC
DOI: 10.1063/5.0007119

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems

Autores: E. Catapano, M. Cassé, G. Ghibaudo
Publicado en: IEEE Transactions on Electron Devices, Edición 70, 2024, Página(s) 4049-4054, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3283941

Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor

Autores: L. Le Guevel, G. Billiot, S. De Franceschi, A. Morel, X. Jehl, A.G.M. Jansen, G. Pillonnet
Publicado en: Chip, Edición 2, 2025, Página(s) 100068, ISSN 2709-4723
Editor: Elsevier BV
DOI: 10.1016/j.chip.2023.100068

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Autores: Gonzalez-Zalba, M.F.; de Franceschi, S.; Charbon, E.; Meunier, Tristan; Vinet, M.; Dzurak, A.S.
Publicado en: Nature Electronics, Edición 5, 2021, ISSN 2520-1131
Editor: Nature Portfolio
DOI: 10.48550/arxiv.2011.11753

Complete Readout of Two-Electron Spin States in a Double Quantum Dot

Autores: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, and Tristan Meunier
Publicado en: PRX Quantum`, 2023, ISSN 2691-3399
Editor: APS
DOI: 10.1103/prxquantum.4.010329

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Autores: Jing Li; Benjamin Venitucci; Yann-Michel Niquet
Publicado en: Physical Review B, Edición 1, 2023, ISSN 2469-9950
Editor: APS
DOI: 10.48550/arxiv.2003.07592

TCAD simulations of FDSOI devices down to deep cryogenic temperature

Autores: E. Catapano, M. Cassé, F. Gaillard, S. de Franceschi, T. Meunier, M. Vinet, G. Ghibaudo
Publicado en: Solid-State Electronics, Edición 194, 2023, Página(s) 108319, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108319

Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited)

Autores: Mikaël Cassé, Flávio Enrico Bergamaschi, Quentin Berlingard
Publicado en: 2025 IEEE International Reliability Physics Symposium (IRPS), 2025, Página(s) 01-07
Editor: IEEE
DOI: 10.1109/irps48204.2025.10983307

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Autores: L. Hutin, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, B. Bertrand, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence
Publicado en: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Página(s) 37.7.1-37.7.4, ISBN 978-1-7281-4032-2
Editor: IEEE
DOI: 10.1109/iedm19573.2019.8993580

Transport characterization of CMOS-based devices fabricated with isotopically-enriched <sup>28</sup>Si for spin qubit applications

Autores: G. Elbaz, M. Cassé, V. Labracherie, G. Roussely, B. Bertrand, H. Niebojewski, M. Vinet, F. Balestro, M. Urdampilleta, T. Meunier, B. Cardoso Paz
Publicado en: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2024, Página(s) 5-8
Editor: IEEE
DOI: 10.1109/essderc59256.2023.10268523

Transport Characterization and Quantum Dot Coupling in Commercial 22FDX®

Autores: G.A. Elbaz, P.-L. Julliard, M. Cassé, H. Niebojewski, B. Bertrand, G. Roussely, V. Labracherie, M. Vinet, B. C. Paz, T. Meunier
Publicado en: 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2025, Página(s) 1-4
Editor: IEEE
DOI: 10.1109/sispad66650.2025.11186314

A new FDSOI spin qubit platform with 40nm effective control pitch

Autores: T Bédécarrats, B Cardoso Paz, B Martinez Diaz, H Niebojewski, B Bertrand, N Rambal, C Comboroure, A Sarrazin, F Boulard, E Guyez, J-M Hartmann, Y Morand, A Magalhaes-Lucas, E Nowak, E Catapano, M Cassé, M Urdampilleta, Y-M Niquet, F Gaillard, S De Franceschi, T Meunier, M Vinet
Publicado en: 2021, ISBN 978-1-6654-2572-8
Editor: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices

Autores: B. Bertrand, B. Martinez, J. Li, B. Cardoso Paz, V. Millory, V. Labracherie, L. Brévard, H. Sahin, G. Roussely, A. Sarrazin, T. Meunier, M. Vinet, Y.-M. Niquet, B. Brun, R. Maurand, S. De Franceschi, H. Niebojewski
Publicado en: 2023 International Electron Devices Meeting (IEDM), 2024, Página(s) 1-4
Editor: IEEE
DOI: 10.1109/iedm45741.2023.10413763

A Cryogenic Active Router for Qubit Array Biasing from DC to 320 MHz at 100 nm Gate Pitch

Autores: Baptiste Jadot, Marcos Zurita, Gérard Billiot, Yvain Thonnart, Loїck Le Guevel, Mathieu Darnas, Candice Thomas, Jean Charbonnier, Tristan Meunier, Maud Vinet, Franck Badets, Gaël Pillonnet
Publicado en: ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2024, Página(s) 157-160
Editor: IEEE
DOI: 10.1109/esscirc59616.2023.10268775

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Autores: Bruna Cardoso Paz, Loick Le Guevel, Mikael Casse, Gerard Billiot, Gael Pillonnet, Aloysius Jansen, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Gerard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Publicado en: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020, Página(s) 1-5, ISBN 978-1-7281-4008-7
Editor: IEEE
DOI: 10.1109/icmts48187.2020.9107906

Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing

Autores: B. Cardoso Paz, L. Le Guevel, M. Casse, G. Billiot, G. Pillonnet, A. G. M. Jansen, R. Maurand, S. Haendler, A. Juge, E. Vincent, P. Galy, G. Ghibaudo, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Publicado en: 2020 IEEE Symposium on VLSI Technology, 2024, Página(s) 1-2
Editor: IEEE
DOI: 10.1109/vlsitechnology18217.2020.9265034

Challenges and perspectives in the modeling of spin qubits

Autores: Y. M. Niquet, L. Hutin, B. Martinez Diaz, B. Venitucci, J. Li, V. Michal, G. Troncoso Fernandez-Bada, H. Jacquinot, A. Amisse, A. Apra, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barriere, V. Schmitt, E. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Casse, E. Catapano, P. A. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A.
Publicado en: 2020 IEEE International Electron Devices Meeting (IEDM), 2022, Página(s) 30.1.1-30.1.4
Editor: IEEE
DOI: 10.1109/iedm13553.2020.9371962

Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation

Autores: Candice Thomas, Jean Charbonnier, Arnaud Garnier, Nicolas Bresson, Frank Fournel, Sebastien Renet, Remi Franiatte, Nadine David, Vivien Thiney, Matias Urdampilleta, Tristan Meunier, Maud Vinet
Publicado en: 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), 2022, Página(s) 1-7
Editor: IEEE
DOI: 10.1109/estc48849.2020.9229657

FDSOI for cryoCMOS electronics: device characterization towards compact model

Autores: M. Casse, B. Cardoso Paz, F. Bergamaschi, G. Ghibaudo, F. Serra, G. Billiot, A. G. M. Jansen, Q. Berlingard, S. Martinie, T. Bedecarrats, L. Contamin, A. Juge, E. Vincent, P. Galy, M.A Pavanello, M. Vinet, T. Meunier, F. Gaillard
Publicado en: 2022 International Electron Devices Meeting (IEDM), 2024, Página(s) 34.6.1-34.6.4
Editor: IEEE
DOI: 10.1109/iedm45625.2022.10019322

19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

Autores: Loick Le Guevel, Gerard Billiot, Xavier Jehl, Silvano De Franceschi, Marcos Zurita, Yvain Thonnart, Maud Vinet, Marc Sanquer, Romain Maurand, Aloysius G. M. Jansen, Gael Pillonnet
Publicado en: 2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, Página(s) 306-308, ISBN 978-1-7281-3205-1
Editor: IEEE
DOI: 10.1109/isscc19947.2020.9063090

FDSOI Platform for Quantum Computing

Autores: B. C. Paz, G. A. Elbaz, M. Ouvrier-Buffet, M. Cassé, F. E. Bergamaschi, J.B. Filippini, J. J. Suarez Berru, P. L. Julliard, B. Martinez I Diaz, B. Klemt, V. El-Homsy, V. Champain, V. Millory, R. Lethiecq, V. Labracherie, G. Roussely, B. Bertrand, H. Niebojewski, F. Badets, M. Urdampilleta, S. De Franceschi, T. Meunier, M. Vinet
Publicado en: 2024 IEEE International Electron Devices Meeting (IEDM), 2025, Página(s) 1-4
Editor: IEEE
DOI: 10.1109/iedm50854.2024.10873521

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autores: Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Publicado en: IEEE Transactions on Electron Devices, 2020, Página(s) 1-5, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Autores: M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Publicado en: IEEE Transactions on Electron Devices, 2020, Página(s) 1-5, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Autores: Mikaël Cassé, Gérard Ghibaudo
Publicado en: Low-Temperature Technologies and Applications, 2022
Editor: IntechOpen
DOI: 10.5772/intechopen.98403

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