3D integration technology for silicon spin qubits

Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot

Autorzy: R. Ezzouch; Simon Zihlmann; Vincent P. Michal; Jing Li; A. Apra; Benoit Bertrand; Louis Hutin; Maud Vinet; Matias Urdampilleta; Tristan Meunier; Xavier Jehl; Yann-Michel Niquet; Marc Sanquer; Silvano De Franceschi; Romain Maurand
Opublikowane w: https://hal.science/hal-03376661, Numer 5, 2021, ISSN 2331-7019
Wydawca: APS
DOI: 10.48550/arxiv.2012.15588

Strong coupling between a photon and a hole spin in silicon

Autorzy: Cécile X Yu, Simon Zihlmann, José C Abadillo-Uriel, Vincent P Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Étienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Opublikowane w: Nature Nanotechnology, 2023, ISSN 1748-3387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41565-023-01332-3

Semiconductor qubits in practice

Autorzy: Anasua Chatterjee; Paul G. Stevenson; Silvano De Franceschi; Andrea Morello; Nathalie P. de Leon; Ferdinand Kuemmeth
Opublikowane w: Nature Reviews Physics, Numer 7, 2020, ISSN 2522-5820
Wydawca: Nature Portfolio
DOI: 10.1038/s42254-021-00283-9

Charge Detection in an Array of CMOS Quantum Dots

Autorzy: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta
Opublikowane w: Physical Review Applied, Numer 14/2, 2020, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.14.024066

The 2021 quantum materials roadmap

Autorzy: eliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V Yazyev, Erik PAM Bakkers, Jesper Nygård, Pol Forn-Díaz, Silvano De Franceschi, JW McIver, LEF Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O Valenzuela, Marius V Costache, Aurélie
Opublikowane w: JPhys Materials, 2021, ISSN 2515-7639
Wydawca: IOP Publishing, 2018-
DOI: 10.1088/2515-7639/abb74e

"Tunable hole spin-photon interaction based on <math><mi mathvariant=""monospace"">g</mi></math>-matrix modulation"

Autorzy: V. P. Michal; J. C. Abadillo-Uriel; S. Zihlmann; R. Maurand; Y.-M. Niquet; M. Filippone
Opublikowane w: "Phys.Rev.B, 2023, 107 (4), pp.L041303. ⟨10.1103/PhysRevB.107.L041303⟩", Numer 1, 2023, ISSN 2469-9950
Wydawca: APS
DOI: 10.48550/arxiv.2204.00404

A single hole spin with enhanced coherence in natural silicon

Autorzy: Nicolas Piot, B Brun, Vivien Schmitt, Simon Zihlmann, VP Michal, A Apra, JC Abadillo-Uriel, Xavier Jehl, Benoit Bertrand, H Niebojewski, L Hutin, M Vinet, M Urdampilleta, Tristan Meunier, Y-M Niquet, Romain Maurand, S De Franceschi
Opublikowane w: Nature Nanotechnology, 2022, ISSN 1748-3387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41565-022-01196-z

Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Autorzy: Cameron Spence, Bruna Cardoso Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, and Matias Urdampilleta
Opublikowane w: Phys. Rev. Applied, 2023, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.19.044010

The germanium quantum information route

Autorzy: Giordano Scappucci, Christoph Kloeffel, Floris A Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhors
Opublikowane w: Nature Reviews Materials, 2021, ISSN 2058-8437
Wydawca: Nature Portfolio
DOI: 10.1038/s41578-020-00262-z

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Autorzy: Vincent P. Michal; Benjamin Venitucci; Yann-Michel Niquet
Opublikowane w: Physical Review B, Numer 1, 2020, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.103.045305

Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots

Autorzy: Cameron Spence; Bruna Cardoso Paz; Bernhard Klemt; Emmanuel Chanrion; David J. Niegemann; Baptiste Jadot; Vivien Thiney; Benoit Bertrand; Heimanu Niebojewski; Pierre-André Mortemousque; Xavier Jehl; Romain Maurand; Silvano De Franceschi; Maud Vinet; Franck Balestro; Christopher Bäuerle; Yann-Michel Niquet; Tristan Meunier; Matias Urdampilleta
Opublikowane w: ISSN: 2331-7019, Numer 3, 2022, ISSN 2331-7019
Wydawca: APS
DOI: 10.48550/arxiv.2109.13557

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Autorzy: Gonzalez-Zalba, M.F.; de Franceschi, S.; Charbon, E.; Meunier, Tristan; Vinet, M.; Dzurak, A.S.
Opublikowane w: Nature Electronics, Numer 5, 2021, ISSN 2520-1131
Wydawca: Nature Portfolio
DOI: 10.48550/arxiv.2011.11753

Complete Readout of Two-Electron Spin States in a Double Quantum Dot

Autorzy: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, and Tristan Meunier
Opublikowane w: PRX Quantum`, 2023, ISSN 2691-3399
Wydawca: APS
DOI: 10.1103/prxquantum.4.010329

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Autorzy: Jing Li; Benjamin Venitucci; Yann-Michel Niquet
Opublikowane w: Physical Review B, Numer 1, 2023, ISSN 2469-9950
Wydawca: APS
DOI: 10.48550/arxiv.2003.07592

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Autorzy: L. Hutin, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, B. Bertrand, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence
Opublikowane w: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Strona(/y) 37.7.1-37.7.4, ISBN 978-1-7281-4032-2
Wydawca: IEEE
DOI: 10.1109/iedm19573.2019.8993580

A new FDSOI spin qubit platform with 40nm effective control pitch

Autorzy: T Bédécarrats, B Cardoso Paz, B Martinez Diaz, H Niebojewski, B Bertrand, N Rambal, C Comboroure, A Sarrazin, F Boulard, E Guyez, J-M Hartmann, Y Morand, A Magalhaes-Lucas, E Nowak, E Catapano, M Cassé, M Urdampilleta, Y-M Niquet, F Gaillard, S De Franceschi, T Meunier, M Vinet
Opublikowane w: 2021, ISBN 978-1-6654-2572-8
Wydawca: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Autorzy: Bruna Cardoso Paz, Loick Le Guevel, Mikael Casse, Gerard Billiot, Gael Pillonnet, Aloysius Jansen, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Gerard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Opublikowane w: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020, Strona(/y) 1-5, ISBN 978-1-7281-4008-7
Wydawca: IEEE
DOI: 10.1109/icmts48187.2020.9107906

19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

Autorzy: Loick Le Guevel, Gerard Billiot, Xavier Jehl, Silvano De Franceschi, Marcos Zurita, Yvain Thonnart, Maud Vinet, Marc Sanquer, Romain Maurand, Aloysius G. M. Jansen, Gael Pillonnet
Opublikowane w: 2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, Strona(/y) 306-308, ISBN 978-1-7281-3205-1
Wydawca: IEEE
DOI: 10.1109/isscc19947.2020.9063090

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autorzy: Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Opublikowane w: IEEE Transactions on Electron Devices, 2020, Strona(/y) 1-5, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Autorzy: M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Opublikowane w: IEEE Transactions on Electron Devices, 2020, Strona(/y) 1-5, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

Publikacje

Prawa własności intelektualnej

Udostępnij tę stronę

Pobierz