3D integration technology for silicon spin qubits

Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot

Autori: R. Ezzouch; Simon Zihlmann; Vincent P. Michal; Jing Li; A. Apra; Benoit Bertrand; Louis Hutin; Maud Vinet; Matias Urdampilleta; Tristan Meunier; Xavier Jehl; Yann-Michel Niquet; Marc Sanquer; Silvano De Franceschi; Romain Maurand
Pubblicato in: https://hal.science/hal-03376661, Numero 5, 2021, ISSN 2331-7019
Editore: APS
DOI: 10.48550/arxiv.2012.15588

Strong coupling between a photon and a hole spin in silicon

Autori: Cécile X Yu, Simon Zihlmann, José C Abadillo-Uriel, Vincent P Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Étienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Pubblicato in: Nature Nanotechnology, 2023, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-023-01332-3

Semiconductor qubits in practice

Autori: Anasua Chatterjee; Paul G. Stevenson; Silvano De Franceschi; Andrea Morello; Nathalie P. de Leon; Ferdinand Kuemmeth
Pubblicato in: Nature Reviews Physics, Numero 7, 2020, ISSN 2522-5820
Editore: Nature Portfolio
DOI: 10.1038/s42254-021-00283-9

Charge Detection in an Array of CMOS Quantum Dots

Autori: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta
Pubblicato in: Physical Review Applied, Numero 14/2, 2020, ISSN 2331-7019
Editore: APS
DOI: 10.1103/physrevapplied.14.024066

The 2021 quantum materials roadmap

Autori: eliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V Yazyev, Erik PAM Bakkers, Jesper Nygård, Pol Forn-Díaz, Silvano De Franceschi, JW McIver, LEF Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O Valenzuela, Marius V Costache, Aurélie
Pubblicato in: JPhys Materials, 2021, ISSN 2515-7639
Editore: IOP Publishing, 2018-
DOI: 10.1088/2515-7639/abb74e

"Tunable hole spin-photon interaction based on <math><mi mathvariant=""monospace"">g</mi></math>-matrix modulation"

Autori: V. P. Michal; J. C. Abadillo-Uriel; S. Zihlmann; R. Maurand; Y.-M. Niquet; M. Filippone
Pubblicato in: "Phys.Rev.B, 2023, 107 (4), pp.L041303. ⟨10.1103/PhysRevB.107.L041303⟩", Numero 1, 2023, ISSN 2469-9950
Editore: APS
DOI: 10.48550/arxiv.2204.00404

A single hole spin with enhanced coherence in natural silicon

Autori: Nicolas Piot, B Brun, Vivien Schmitt, Simon Zihlmann, VP Michal, A Apra, JC Abadillo-Uriel, Xavier Jehl, Benoit Bertrand, H Niebojewski, L Hutin, M Vinet, M Urdampilleta, Tristan Meunier, Y-M Niquet, Romain Maurand, S De Franceschi
Pubblicato in: Nature Nanotechnology, 2022, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-022-01196-z

Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Autori: Cameron Spence, Bruna Cardoso Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, and Matias Urdampilleta
Pubblicato in: Phys. Rev. Applied, 2023, ISSN 2331-7019
Editore: APS
DOI: 10.1103/physrevapplied.19.044010

The germanium quantum information route

Autori: Giordano Scappucci, Christoph Kloeffel, Floris A Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhors
Pubblicato in: Nature Reviews Materials, 2021, ISSN 2058-8437
Editore: Nature Portfolio
DOI: 10.1038/s41578-020-00262-z

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Autori: Vincent P. Michal; Benjamin Venitucci; Yann-Michel Niquet
Pubblicato in: Physical Review B, Numero 1, 2020, ISSN 2469-9950
Editore: APS
DOI: 10.1103/physrevb.103.045305

Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots

Autori: Cameron Spence; Bruna Cardoso Paz; Bernhard Klemt; Emmanuel Chanrion; David J. Niegemann; Baptiste Jadot; Vivien Thiney; Benoit Bertrand; Heimanu Niebojewski; Pierre-André Mortemousque; Xavier Jehl; Romain Maurand; Silvano De Franceschi; Maud Vinet; Franck Balestro; Christopher Bäuerle; Yann-Michel Niquet; Tristan Meunier; Matias Urdampilleta
Pubblicato in: ISSN: 2331-7019, Numero 3, 2022, ISSN 2331-7019
Editore: APS
DOI: 10.48550/arxiv.2109.13557

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Autori: Gonzalez-Zalba, M.F.; de Franceschi, S.; Charbon, E.; Meunier, Tristan; Vinet, M.; Dzurak, A.S.
Pubblicato in: Nature Electronics, Numero 5, 2021, ISSN 2520-1131
Editore: Nature Portfolio
DOI: 10.48550/arxiv.2011.11753

Complete Readout of Two-Electron Spin States in a Double Quantum Dot

Autori: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, and Tristan Meunier
Pubblicato in: PRX Quantum`, 2023, ISSN 2691-3399
Editore: APS
DOI: 10.1103/prxquantum.4.010329

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Autori: Jing Li; Benjamin Venitucci; Yann-Michel Niquet
Pubblicato in: Physical Review B, Numero 1, 2023, ISSN 2469-9950
Editore: APS
DOI: 10.48550/arxiv.2003.07592

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Autori: L. Hutin, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, B. Bertrand, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 37.7.1-37.7.4, ISBN 978-1-7281-4032-2
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993580

A new FDSOI spin qubit platform with 40nm effective control pitch

Autori: T Bédécarrats, B Cardoso Paz, B Martinez Diaz, H Niebojewski, B Bertrand, N Rambal, C Comboroure, A Sarrazin, F Boulard, E Guyez, J-M Hartmann, Y Morand, A Magalhaes-Lucas, E Nowak, E Catapano, M Cassé, M Urdampilleta, Y-M Niquet, F Gaillard, S De Franceschi, T Meunier, M Vinet
Pubblicato in: 2021, ISBN 978-1-6654-2572-8
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Autori: Bruna Cardoso Paz, Loick Le Guevel, Mikael Casse, Gerard Billiot, Gael Pillonnet, Aloysius Jansen, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Gerard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Pubblicato in: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020, Pagina/e 1-5, ISBN 978-1-7281-4008-7
Editore: IEEE
DOI: 10.1109/icmts48187.2020.9107906

19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

Autori: Loick Le Guevel, Gerard Billiot, Xavier Jehl, Silvano De Franceschi, Marcos Zurita, Yvain Thonnart, Maud Vinet, Marc Sanquer, Romain Maurand, Aloysius G. M. Jansen, Gael Pillonnet
Pubblicato in: 2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, Pagina/e 306-308, ISBN 978-1-7281-3205-1
Editore: IEEE
DOI: 10.1109/isscc19947.2020.9063090

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autori: Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Pubblicato in: IEEE Transactions on Electron Devices, 2020, Pagina/e 1-5, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Autori: M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Pubblicato in: IEEE Transactions on Electron Devices, 2020, Pagina/e 1-5, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

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