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3D integration technology for silicon spin qubits

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures (opens in new window)

Author(s): F. Serra di Santa Maria, L. Contamin, B. Cardoso Paz, M. Cassé, C. Theodorou, F. Balestra, G. Ghibaudo
Published in: Solid-State Electronics, Issue 186, 2025, Page(s) 108175, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108175

Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature (opens in new window)

Author(s): Edoardo Catapano, Gerard Ghibaudo, Mikael Casse, Tadeu Mota Frutuoso, Bruna Cardoso Paz, Thomas Bedecarrats, Agostino Apra, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet
Published in: IEEE Journal of the Electron Devices Society, Issue 9, 2021, Page(s) 582-590, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3082201

Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot (opens in new window)

Author(s): R. Ezzouch; Simon Zihlmann; Vincent P. Michal; Jing Li; A. Apra; Benoit Bertrand; Louis Hutin; Maud Vinet; Matias Urdampilleta; Tristan Meunier; Xavier Jehl; Yann-Michel Niquet; Marc Sanquer; Silvano De Franceschi; Romain Maurand
Published in: https://hal.science/hal-03376661, Issue 5, 2021, ISSN 2331-7019
Publisher: APS
DOI: 10.48550/arxiv.2012.15588

Controlled quantum dot array segmentation via highly tunable interdot tunnel coupling (opens in new window)

Author(s): Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier
Published in: Applied Physics Letters, Issue 121, 2023, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0105635

Broadband parametric amplification for multiplexed SiMOS quantum dot signals (opens in new window)

Author(s): Victor Elhomsy, Luca Planat, David J. Niegemann, Bruna Cardoso-Paz, Ali Badreldin, Bernhard Klemt, Vivien Thiney, Renan Lethiecq, Eric Eyraud, Matthieu C. Dartiailh, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Tristan Meunier, Nicolas Roch, Matias Urdampilleta
Published in: Physical Review Applied, Issue 24, 2025, ISSN 2331-7019
Publisher: American Physical Society (APS)
DOI: 10.1103/sj8d-x674

Strong coupling between a photon and a hole spin in silicon (opens in new window)

Author(s): Cécile X Yu, Simon Zihlmann, José C Abadillo-Uriel, Vincent P Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Étienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Published in: Nature Nanotechnology, 2023, ISSN 1748-3387
Publisher: Nature Publishing Group
DOI: 10.1038/s41565-023-01332-3

Semiconductor qubits in practice (opens in new window)

Author(s): Anasua Chatterjee; Paul G. Stevenson; Silvano De Franceschi; Andrea Morello; Nathalie P. de Leon; Ferdinand Kuemmeth
Published in: Nature Reviews Physics, Issue 7, 2020, ISSN 2522-5820
Publisher: Nature Portfolio
DOI: 10.1038/s42254-021-00283-9

Charge Detection in an Array of CMOS Quantum Dots (opens in new window)

Author(s): Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta
Published in: Physical Review Applied, Issue 14/2, 2020, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/physrevapplied.14.024066

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays (opens in new window)

Author(s): Pierre Hamonic, Martin Nurizzo, Jayshankar Nath, Matthieu C. Dartiailh, Victor Elhomsy, Mathis Fragnol, Biel Martinez, Pierre-Louis Julliard, Bruna Cardoso Paz, Mathilde Ouvrier-Buffet, Jean-Baptiste Filippini, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta
Published in: Nature Communications, Issue 16, 2025, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-025-61556-w

The 2021 quantum materials roadmap (opens in new window)

Author(s): eliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V Yazyev, Erik PAM Bakkers, Jesper Nygård, Pol Forn-Díaz, Silvano De Franceschi, JW McIver, LEF Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O Valenzuela, Marius V Costache, Aurélie
Published in: JPhys Materials, 2021, ISSN 2515-7639
Publisher: IOP Publishing, 2018-
DOI: 10.1088/2515-7639/abb74e

Optimal operation of hole spin qubits (opens in new window)

Author(s): M. Bassi, E. A. Rodríguez-Mena, B. Brun, S. Zihlmann, T. Nguyen, V. Champain, J. C. Abadillo-Uriel, B. Bertrand, H. Niebojewski, R. Maurand, Y.-M. Niquet, X. Jehl, S. De Franceschi, V. Schmitt
Published in: Nature Physics, Issue 22, 2026, Page(s) 75-80, ISSN 1745-2473
Publisher: Nature Publishing Group
DOI: 10.1038/s41567-025-03106-1

"Tunable hole spin-photon interaction based on <math><mi mathvariant=""monospace"">g</mi></math>-matrix modulation" (opens in new window)

Author(s): V. P. Michal; J. C. Abadillo-Uriel; S. Zihlmann; R. Maurand; Y.-M. Niquet; M. Filippone
Published in: "Phys.Rev.B, 2023, 107 (4), pp.L041303. &#x27E8;10.1103/PhysRevB.107.L041303&#x27E9;", Issue 1, 2023, ISSN 2469-9950
Publisher: APS
DOI: 10.48550/arxiv.2204.00404

A single hole spin with enhanced coherence in natural silicon (opens in new window)

Author(s): Nicolas Piot, B Brun, Vivien Schmitt, Simon Zihlmann, VP Michal, A Apra, JC Abadillo-Uriel, Xavier Jehl, Benoit Bertrand, H Niebojewski, L Hutin, M Vinet, M Urdampilleta, Tristan Meunier, Y-M Niquet, Romain Maurand, S De Franceschi
Published in: Nature Nanotechnology, 2022, ISSN 1748-3387
Publisher: Nature Publishing Group
DOI: 10.1038/s41565-022-01196-z

Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling (opens in new window)

Author(s): Bernhard Klemt, Victor Elhomsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron Spence, Matthieu C. Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Published in: npj Quantum Information, Issue 9, 2023, ISSN 2056-6387
Publisher: Springer Science and Business Media LLC
DOI: 10.1038/s41534-023-00776-8

Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots (opens in new window)

Author(s): Cameron Spence, Bruna Cardoso Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, and Matias Urdampilleta
Published in: Phys. Rev. Applied, 2023, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/physrevapplied.19.044010

The germanium quantum information route (opens in new window)

Author(s): Giordano Scappucci, Christoph Kloeffel, Floris A Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhors
Published in: Nature Reviews Materials, 2021, ISSN 2058-8437
Publisher: Nature Portfolio
DOI: 10.1038/s41578-020-00262-z

Real-time millikelvin thermometry in a semiconductor-qubit architecture (opens in new window)

Author(s): V. Champain, V. Schmitt, B. Bertrand, H. Niebojewski, R. Maurand, X. Jehl, C.B. Winkelmann, S. De Franceschi, B. Brun
Published in: Physical Review Applied, Issue 21, 2024, ISSN 2331-7019
Publisher: American Physical Society (APS)
DOI: 10.1103/physrevapplied.21.064039

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels (opens in new window)

Author(s): Vincent P. Michal; Benjamin Venitucci; Yann-Michel Niquet
Published in: Physical Review B, Issue 1, 2020, ISSN 2469-9950
Publisher: APS
DOI: 10.1103/physrevb.103.045305

Parametric longitudinal coupling of a semiconductor charge qubit and an rf resonator (opens in new window)

Author(s): V. Champain, S. Zihlmann, A. Chessari, B. Bertrand, H. Niebojewski, É. Dumur, X. Jehl, V. Schmitt, B. Brun, C. Winkelmann, Y.M. Niquet, M. Filippone, S. De Franceschi, R. Maurand
Published in: Physical Review Applied, Issue 23, 2025, ISSN 2331-7019
Publisher: American Physical Society (APS)
DOI: 10.1103/physrevapplied.23.034067

Scaling silicon-based quantum computing using CMOS technology (opens in new window)

Author(s): M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A. S. Dzurak
Published in: Nature Electronics, Issue 4, 2024, Page(s) 872-884, ISSN 2520-1131
Publisher: Springer Science and Business Media LLC
DOI: 10.1038/s41928-021-00681-y

Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K (opens in new window)

Author(s): David J. Niegemann, Victor El-Homsy, Baptiste Jadot, Martin Nurizzo, Bruna Cardoso-Paz, Emmanuel Chanrion, Matthieu Dartiailh, Bernhard Klemt, Vivien Thiney, Christopher Bäuerle, Pierre-André Mortemousque, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta
Published in: PRX Quantum, Issue 3, 2022, ISSN 2691-3399
Publisher: American Physical Society (APS)
DOI: 10.1103/prxquantum.3.040335

Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots (opens in new window)

Author(s): Cameron Spence; Bruna Cardoso Paz; Bernhard Klemt; Emmanuel Chanrion; David J. Niegemann; Baptiste Jadot; Vivien Thiney; Benoit Bertrand; Heimanu Niebojewski; Pierre-André Mortemousque; Xavier Jehl; Romain Maurand; Silvano De Franceschi; Maud Vinet; Franck Balestro; Christopher Bäuerle; Yann-Michel Niquet; Tristan Meunier; Matias Urdampilleta
Published in: ISSN: 2331-7019, Issue 3, 2022, ISSN 2331-7019
Publisher: APS
DOI: 10.48550/arxiv.2109.13557

Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures (opens in new window)

Author(s): F. Serra di Santa Maria, L. Contamin, M. Cassé, C. Theodorou, F. Balestra, G. Ghibaudo
Published in: Solid-State Electronics, Issue 192, 2025, Page(s) 108271, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108271

Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature (opens in new window)

Author(s): Bruna Cardoso Paz, Mikaël Cassé, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Franck Arnaud, Gérard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Published in: Solid-State Electronics, Issue 186, 2025, Page(s) 108071, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108071

Low-power transimpedance amplifier for cryogenic integration with quantum devices (opens in new window)

Author(s): L. Le Guevel, G. Billiot, B. Cardoso Paz, M. L. V. Tagliaferri, S. De Franceschi, R. Maurand, M. Cassé, M. Zurita, M. Sanquer, M. Vinet, X. Jehl, A. G. M. Jansen, G. Pillonnet
Published in: Applied Physics Reviews, Issue 7, 2025, ISSN 1931-9401
Publisher: AIP Publishing LLC
DOI: 10.1063/5.0007119

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems (opens in new window)

Author(s): E. Catapano, M. Cassé, G. Ghibaudo
Published in: IEEE Transactions on Electron Devices, Issue 70, 2024, Page(s) 4049-4054, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3283941

Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor (opens in new window)

Author(s): L. Le Guevel, G. Billiot, S. De Franceschi, A. Morel, X. Jehl, A.G.M. Jansen, G. Pillonnet
Published in: Chip, Issue 2, 2025, Page(s) 100068, ISSN 2709-4723
Publisher: Elsevier BV
DOI: 10.1016/j.chip.2023.100068

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives (opens in new window)

Author(s): Gonzalez-Zalba, M.F.; de Franceschi, S.; Charbon, E.; Meunier, Tristan; Vinet, M.; Dzurak, A.S.
Published in: Nature Electronics, Issue 5, 2021, ISSN 2520-1131
Publisher: Nature Portfolio
DOI: 10.48550/arxiv.2011.11753

Complete Readout of Two-Electron Spin States in a Double Quantum Dot (opens in new window)

Author(s): Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, and Tristan Meunier
Published in: PRX Quantum`, 2023, ISSN 2691-3399
Publisher: APS
DOI: 10.1103/prxquantum.4.010329

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits (opens in new window)

Author(s): Jing Li; Benjamin Venitucci; Yann-Michel Niquet
Published in: Physical Review B, Issue 1, 2023, ISSN 2469-9950
Publisher: APS
DOI: 10.48550/arxiv.2003.07592

TCAD simulations of FDSOI devices down to deep cryogenic temperature (opens in new window)

Author(s): E. Catapano, M. Cassé, F. Gaillard, S. de Franceschi, T. Meunier, M. Vinet, G. Ghibaudo
Published in: Solid-State Electronics, Issue 194, 2023, Page(s) 108319, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108319

Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited) (opens in new window)

Author(s): Mikaël Cassé, Flávio Enrico Bergamaschi, Quentin Berlingard
Published in: 2025 IEEE International Reliability Physics Symposium (IRPS), 2025, Page(s) 01-07
Publisher: IEEE
DOI: 10.1109/irps48204.2025.10983307

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays (opens in new window)

Author(s): L. Hutin, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, B. Bertrand, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 37.7.1-37.7.4, ISBN 978-1-7281-4032-2
Publisher: IEEE
DOI: 10.1109/iedm19573.2019.8993580

Transport characterization of CMOS-based devices fabricated with isotopically-enriched <sup>28</sup>Si for spin qubit applications (opens in new window)

Author(s): G. Elbaz, M. Cassé, V. Labracherie, G. Roussely, B. Bertrand, H. Niebojewski, M. Vinet, F. Balestro, M. Urdampilleta, T. Meunier, B. Cardoso Paz
Published in: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2024, Page(s) 5-8
Publisher: IEEE
DOI: 10.1109/essderc59256.2023.10268523

Transport Characterization and Quantum Dot Coupling in Commercial 22FDX® (opens in new window)

Author(s): G.A. Elbaz, P.-L. Julliard, M. Cassé, H. Niebojewski, B. Bertrand, G. Roussely, V. Labracherie, M. Vinet, B. C. Paz, T. Meunier
Published in: 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2025, Page(s) 1-4
Publisher: IEEE
DOI: 10.1109/sispad66650.2025.11186314

A new FDSOI spin qubit platform with 40nm effective control pitch (opens in new window)

Author(s): T Bédécarrats, B Cardoso Paz, B Martinez Diaz, H Niebojewski, B Bertrand, N Rambal, C Comboroure, A Sarrazin, F Boulard, E Guyez, J-M Hartmann, Y Morand, A Magalhaes-Lucas, E Nowak, E Catapano, M Cassé, M Urdampilleta, Y-M Niquet, F Gaillard, S De Franceschi, T Meunier, M Vinet
Published in: 2021, ISBN 978-1-6654-2572-8
Publisher: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices (opens in new window)

Author(s): B. Bertrand, B. Martinez, J. Li, B. Cardoso Paz, V. Millory, V. Labracherie, L. Brévard, H. Sahin, G. Roussely, A. Sarrazin, T. Meunier, M. Vinet, Y.-M. Niquet, B. Brun, R. Maurand, S. De Franceschi, H. Niebojewski
Published in: 2023 International Electron Devices Meeting (IEDM), 2024, Page(s) 1-4
Publisher: IEEE
DOI: 10.1109/iedm45741.2023.10413763

A Cryogenic Active Router for Qubit Array Biasing from DC to 320 MHz at 100 nm Gate Pitch (opens in new window)

Author(s): Baptiste Jadot, Marcos Zurita, Gérard Billiot, Yvain Thonnart, Loїck Le Guevel, Mathieu Darnas, Candice Thomas, Jean Charbonnier, Tristan Meunier, Maud Vinet, Franck Badets, Gaël Pillonnet
Published in: ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2024, Page(s) 157-160
Publisher: IEEE
DOI: 10.1109/esscirc59616.2023.10268775

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications (opens in new window)

Author(s): Bruna Cardoso Paz, Loick Le Guevel, Mikael Casse, Gerard Billiot, Gael Pillonnet, Aloysius Jansen, Sebastien Haendler, Andre Juge, Emmanuel Vincent, Philippe Galy, Gerard Ghibaudo, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Published in: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020, Page(s) 1-5, ISBN 978-1-7281-4008-7
Publisher: IEEE
DOI: 10.1109/icmts48187.2020.9107906

Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing (opens in new window)

Author(s): B. Cardoso Paz, L. Le Guevel, M. Casse, G. Billiot, G. Pillonnet, A. G. M. Jansen, R. Maurand, S. Haendler, A. Juge, E. Vincent, P. Galy, G. Ghibaudo, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Published in: 2020 IEEE Symposium on VLSI Technology, 2024, Page(s) 1-2
Publisher: IEEE
DOI: 10.1109/vlsitechnology18217.2020.9265034

Challenges and perspectives in the modeling of spin qubits (opens in new window)

Author(s): Y. M. Niquet, L. Hutin, B. Martinez Diaz, B. Venitucci, J. Li, V. Michal, G. Troncoso Fernandez-Bada, H. Jacquinot, A. Amisse, A. Apra, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barriere, V. Schmitt, E. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Casse, E. Catapano, P. A. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A.
Published in: 2020 IEEE International Electron Devices Meeting (IEDM), 2022, Page(s) 30.1.1-30.1.4
Publisher: IEEE
DOI: 10.1109/iedm13553.2020.9371962

Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation (opens in new window)

Author(s): Candice Thomas, Jean Charbonnier, Arnaud Garnier, Nicolas Bresson, Frank Fournel, Sebastien Renet, Remi Franiatte, Nadine David, Vivien Thiney, Matias Urdampilleta, Tristan Meunier, Maud Vinet
Published in: 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), 2022, Page(s) 1-7
Publisher: IEEE
DOI: 10.1109/estc48849.2020.9229657

FDSOI for cryoCMOS electronics: device characterization towards compact model (opens in new window)

Author(s): M. Casse, B. Cardoso Paz, F. Bergamaschi, G. Ghibaudo, F. Serra, G. Billiot, A. G. M. Jansen, Q. Berlingard, S. Martinie, T. Bedecarrats, L. Contamin, A. Juge, E. Vincent, P. Galy, M.A Pavanello, M. Vinet, T. Meunier, F. Gaillard
Published in: 2022 International Electron Devices Meeting (IEDM), 2024, Page(s) 34.6.1-34.6.4
Publisher: IEEE
DOI: 10.1109/iedm45625.2022.10019322

19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot (opens in new window)

Author(s): Loick Le Guevel, Gerard Billiot, Xavier Jehl, Silvano De Franceschi, Marcos Zurita, Yvain Thonnart, Maud Vinet, Marc Sanquer, Romain Maurand, Aloysius G. M. Jansen, Gael Pillonnet
Published in: 2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, Page(s) 306-308, ISBN 978-1-7281-3205-1
Publisher: IEEE
DOI: 10.1109/isscc19947.2020.9063090

FDSOI Platform for Quantum Computing (opens in new window)

Author(s): B. C. Paz, G. A. Elbaz, M. Ouvrier-Buffet, M. Cassé, F. E. Bergamaschi, J.B. Filippini, J. J. Suarez Berru, P. L. Julliard, B. Martinez I Diaz, B. Klemt, V. El-Homsy, V. Champain, V. Millory, R. Lethiecq, V. Labracherie, G. Roussely, B. Bertrand, H. Niebojewski, F. Badets, M. Urdampilleta, S. De Franceschi, T. Meunier, M. Vinet
Published in: 2024 IEEE International Electron Devices Meeting (IEDM), 2025, Page(s) 1-4
Publisher: IEEE
DOI: 10.1109/iedm50854.2024.10873521

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications (opens in new window)

Author(s): Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Published in: IEEE Transactions on Electron Devices, 2020, Page(s) 1-5, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance (opens in new window)

Author(s): M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Published in: IEEE Transactions on Electron Devices, 2020, Page(s) 1-5, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications (opens in new window)

Author(s): Mikaël Cassé, Gérard Ghibaudo
Published in: Low-Temperature Technologies and Applications, 2022
Publisher: IntechOpen
DOI: 10.5772/intechopen.98403

Intellectual Property Rights

QUANTUM DEVICE WITH SPIN QUBITS

Application/Publication number: 18 171613
Date: 2018-05-09
Applicant(s): CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

QUANTUM DEVICE WITH SPIN QUBITS

Application/Publication number: 18 171613
Date: 2018-05-09
Applicant(s): COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

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