Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Resultado final

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm IIIN heteronanostructure qubits

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

Website and logo

Report on project website and logo.

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Publicaciones

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Autores: S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Publicado en: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Editor: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Autores: L. Wu, H. Y. Hsu, and S.P. Voinigescu
Publicado en: IEEE International Microwave Symposium 2021, 2021
Editor: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Autores: M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Publicado en: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Página(s) 111-114, ISBN 978-1-7281-1701-0
Editor: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Autores: Michele Spasaro, Domenico Zito
Publicado en: 2019 International Semiconductor Conference (CAS), 2019, Página(s) 11-20, ISBN 978-1-7281-1888-8
Editor: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Autores: R.R. Severino, M. Spasaro, D. Zito
Publicado en: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Editor: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Autores: Matteo Bina, Andrea Padovani, Luca Larcher
Publicado en: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Editor: MDPI

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Autores: Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Publicado en: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Editor: IEEE
DOI: 10.1109/lmwc.2021.3067003

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Autores: Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Publicado en: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Editor: IEEE
DOI: 10.1109/tmtt.2021.3094189

Cryogenic Characterization of the High-Frequency and Noise Performance of SiGe HBTs from DC to 70 GHz and Down to 2 K

Autores: S. Bonen, G. Cooke, T. Jager, A. Bharadwaj, S. Pati Tripathi, D. Céli, P. Chevalier, P. Schvan, and S. P. Voinigescu
Publicado en: IEEE Microwave and Wireless Components Letters, Edición Vol. 32, N.6, 2022, Página(s) pp. 666-669, ISSN 1558-1764
Editor: IEEE
DOI: 10.1109/lmwc.2022.3160716

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Autores: Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Publicado en: Physical Review B, 2021, ISSN 2469-9969
Editor: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Autores: S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Publicado en: IEEE Electron Device Letters, 2019, Página(s) 1-1, ISSN 0741-3106
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Autores: Filippo Troiani
Publicado en: Physical Review B, Edición 100/15, 2019, ISSN 2469-9950
Editor: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Autores: Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Publicado en: IEEE Microwave and Wireless Components Letters, Edición 30/1, 2020, Página(s) 50-53, ISSN 1531-1309
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Autores: Alexandru Müller; Alexandra Nicoloiu
Publicado en: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Editor: Academica – Romanian Academy Journal

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Autores: Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Publicado en: Physical Review B, 2021, ISSN 2469-9969
Editor: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Autores: Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Publicado en: IEEE Access, 2021, ISSN 2169-3536
Editor: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Autores: L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Publicado en: Physical Review Applied, 2021, ISSN 2331-7019
Editor: American Physical Society
DOI: 10.1103/physrevapplied.16.054034

Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunnelin

Autores: A. Secchi and F. Troiani
Publicado en: Entropy, Edición Vol. 82, 2023, ISSN 1099-4300
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e25010082

Resultado final

Publicaciones

Compartir esta página

Descargar