Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Livrables

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm IIIN heteronanostructure qubits

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

Website and logo

Report on project website and logo.

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Publications

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Auteurs: S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Publié dans: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Éditeur: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Auteurs: L. Wu, H. Y. Hsu, and S.P. Voinigescu
Publié dans: IEEE International Microwave Symposium 2021, 2021
Éditeur: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Auteurs: M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Publié dans: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Page(s) 111-114, ISBN 978-1-7281-1701-0
Éditeur: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Auteurs: Michele Spasaro, Domenico Zito
Publié dans: 2019 International Semiconductor Conference (CAS), 2019, Page(s) 11-20, ISBN 978-1-7281-1888-8
Éditeur: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Auteurs: R.R. Severino, M. Spasaro, D. Zito
Publié dans: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Éditeur: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Auteurs: Matteo Bina, Andrea Padovani, Luca Larcher
Publié dans: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Éditeur: MDPI

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Auteurs: Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Publié dans: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Éditeur: IEEE
DOI: 10.1109/lmwc.2021.3067003

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Auteurs: Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Publié dans: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Éditeur: IEEE
DOI: 10.1109/tmtt.2021.3094189

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Auteurs: Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Publié dans: Physical Review B, 2021, ISSN 2469-9969
Éditeur: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Auteurs: S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Publié dans: IEEE Electron Device Letters, 2019, Page(s) 1-1, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Auteurs: Filippo Troiani
Publié dans: Physical Review B, Numéro 100/15, 2019, ISSN 2469-9950
Éditeur: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Auteurs: Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Publié dans: IEEE Microwave and Wireless Components Letters, Numéro 30/1, 2020, Page(s) 50-53, ISSN 1531-1309
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Auteurs: Alexandru Müller; Alexandra Nicoloiu
Publié dans: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Éditeur: Academica – Romanian Academy Journal

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Auteurs: Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Publié dans: Physical Review B, 2021, ISSN 2469-9969
Éditeur: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Auteurs: Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Publié dans: IEEE Access, 2021, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Auteurs: L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Publié dans: Physical Review Applied, 2021, ISSN 2331-7019
Éditeur: American Physical Society
DOI: 10.1103/physrevapplied.16.054034

Livrables

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