Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Informations projet

IQubits

N° de convention de subvention: 829005

DOI

10.3030/829005

Projet clôturé

Date de signature de la CE 17 Decembre 2018

Date de début 1 Janvier 2019

Date de fin 30 Avril 2024

Financé au titre de

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Coût total

€ 3 180 707,50

Contribution de l’UE

€ 2 688 375,00

Coordonné par

AKADEMIA GORNICZO-HUTNICZA IM. STANISLAWA STASZICA W KRAKOWIE
Poland

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Documents, reports (17)

Nanofabrication process optimization 2

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

Dissemination and exploitation plan 3

Report on dissemination and exploitation plan 3

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Epitaxy and III-N/FDSOI integration

Report on epitaxy optimization and III-N qubits integration with FDSOI CMOS technology.

Si and III-N 10nm qubit fabrication

Report on fabrication of Si and III-N 10nm qubits.

III-N SET temperature characterisation

Report on experimental characterization of III-N SET structures versus temperature.

Qubit optimization

Report on qubit optimization, quantum gate and readout fidelity.

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm III-N heteronanostructure qubits.

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Tunneling and spin-orbit coupling

Report on tailoring spin-orbit coupling and internet tunneling (k p modelling).

DC-220GHz 300&4K Si/III-N qubit tests 4

Final report on tests of 10nm Si and III-N qubits at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

DC-220GHz 300&4K FDSOI qubit tests 3

Report on tests of FDSOI qubits and ICs version 2 at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Demonstrators, pilots, prototypes (2)

Cryogenic measurement set-up (to 140 GHz & 4 K)

Arrangement of the cryogenic measurement set-up for S-parameters up to the frequency of 140 GHz and down to the temperature of 4 K.

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Websites, patent fillings, videos etc. (1)

Website and logo

Report on project website and logo.

Publications

Conference proceedings (11)

A Compact TIA in 22nm FDSOI CMOS for Qubit Readout in Monolithic Quantum Processors

Auteurs: D. Zito and T. D. Nhut
Publié dans: IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2023, Numéro 4-7 Dec. 2023, 2023, Page(s) pp. 1-4, ISBN 979-8-3503-2649-9
Éditeur: IEEE
DOI: 10.1109/icecs58634.2023.10382853

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Auteurs: S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Publié dans: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Éditeur: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

Sub-mW 30GHz Variable-Gain LNA in 22nm FDSOI CMOS for Low-Power Tapered mm-Wave 5G/6G Phased-Array Receivers

Auteurs: M. Spasaro and D. Zito
Publié dans: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numéro 19-24 June 2022, 2022, Page(s) 723-726, ISBN 978-1-6654-9613-1
Éditeur: IEEE
DOI: 10.1109/ims37962.2022.9865340

Cryogenic Compact Low-Power 60GHz Amplifier for Spin Qubit Control in Monolithic Silicon Quantum Processors

Auteurs: M. Spasaro, S. Bonen, G. Cooke, T. Jager, T. D. Nhut, D. Sufrà, S. P. Voinigescu, and D. Zito
Publié dans: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numéro 19-24 June 2022, 2022, Page(s) 164-168, ISBN 978-1-6654-9613-1
Éditeur: IEEE
DOI: 10.1109/ims37962.2022.9865561

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Auteurs: L. Wu, H. Y. Hsu, and S.P. Voinigescu
Publié dans: IEEE International Microwave Symposium 2021, 2021
Éditeur: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Auteurs: M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Publié dans: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Page(s) 111-114, ISBN 978-1-7281-1701-0
Éditeur: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Auteurs: Michele Spasaro, Domenico Zito
Publié dans: 2019 International Semiconductor Conference (CAS), 2019, Page(s) 11-20, ISBN 978-1-7281-1888-8
Éditeur: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Auteurs: R.R. Severino, M. Spasaro, D. Zito
Publié dans: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Éditeur: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Auteurs: Matteo Bina, Andrea Padovani, Luca Larcher
Publié dans: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Éditeur: MDPI

IQubits: An All-in-One Integrated Qubit Platform in Commercial Ultra-Scaled Silicon Foundry Technologies for Scalable Monolithic Quantum Processors

Auteurs: D. Zito, S. Voinigescu, F. Troiani, E. Molinari, A. Muller, G. Konstantinidis, E. Iliopoulos, S. Dominici
Publié dans: European Quantum Technology Conference 2023, Numéro 16-20 October 2023, 2023
Éditeur: European Quantum Flagship
DOI: 10.15488/16649

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

Auteurs: T. D. Nhut, S. Bonen, G. Cooke, T. Jager, M. Spasaro, D. Sufrà, S. P. Voinigescu, and D. Zito
Publié dans: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numéro 19-24 June 2022, 2022, Page(s) 168-171, ISBN 978-1-6654-9613-1
Éditeur: IEEE
DOI: 10.1109/ims37962.2022.9865577

Peer reviewed articles (21)

Theory of multidimensional quantum capacitance and its application to spin and charge discrimination in quantum dot arrays

Auteurs: A. Secchi and F. Troiani
Publié dans: Phys. Rev. B, Numéro Vol. 107, Iss. 15 — 15 April 2023, 2023, ISSN 2469-9969
Éditeur: APS
DOI: 10.1103/physrevb.107.155411

CMOS integrated circuits for quantum information sciences

Auteurs: 10. J. Andres, M. Babaie, J.C Bardin, I. Bashir, G. Billiot, E. Blokhina, S. Bonen, E. Charbon, J. Chiaverini, I.L. Chuang, C. Degenhardt, D. Englund, L. Geck, L. Le Guevel, D. Ham, R. Han, M.I. Ibrahim, D. Krüger, K. M. Lei, A. Morel, D. Nielinger, G. Pillonet, J. M. Sage, F. Sebastiano, R.B. Staszewski, J. Stuart, A. Vladimirescu, P. Vliex, and S.P. Voinigescu
Publié dans: IEEE Transactions on Quantum Engineering, Numéro vol. 4, 2023, 2023, Page(s) 1-30, ISSN 2689-1808
Éditeur: IEEE
DOI: 10.1109/tqe.2023.3290593

Envelope-function theory of inhomogeneous strain in semiconductor nanostructures

Auteurs: A. Secchi and F. Troiani
Publié dans: Mesoscale and Nanoscale Physics, Numéro Vol. 110, Is. 4, 15 July 2024, 2023, ISSN 2331-8422
Éditeur: AxXiv
DOI: 10.48550/arxiv.2312.15967

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Auteurs: Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Publié dans: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Éditeur: IEEE
DOI: 10.1109/lmwc.2021.3067003

Quantum estimation and remote charge sensing with a hole-spin qubit in silicon

Auteurs: G. Forghieri, A. Secchi, A. Bertoni, P. Bordone, and F. Troiani
Publié dans: Phys. Rev. Research, Numéro Vol. 5, Is. 4, November - December 2023, 2023, ISSN 2643-1564
Éditeur: APS
DOI: 10.1103/physrevresearch.5.043159

0.52-mW 30-GHz LNA in 22-nm FDSOI CMOS

Auteurs: M. Spasaro and D. Zito
Publié dans: IEEE Transactions on Circuits and Systems II: Express Briefs, Numéro vol. 70, no. 10, Oct. 2023, 2023, Page(s) 3752-3756, ISSN 1558-3791
Éditeur: IEEE
DOI: 10.1109/tcsii.2023.3288354

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Auteurs: Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Publié dans: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Éditeur: IEEE
DOI: 10.1109/tmtt.2021.3094189

Cryogenic Characterization of the High-Frequency and Noise Performance of SiGe HBTs from DC to 70 GHz and Down to 2 K

Auteurs: S. Bonen, G. Cooke, T. Jager, A. Bharadwaj, S. Pati Tripathi, D. Céli, P. Chevalier, P. Schvan, and S. P. Voinigescu
Publié dans: IEEE Microwave and Wireless Components Letters, Numéro Vol. 32, N.6, 2022, Page(s) pp. 666-669, ISSN 1558-1764
Éditeur: IEEE
DOI: 10.1109/lmwc.2022.3160716

Characterization and Modelling of Quantum Dot Behaviour in FDSOI Devices

Auteurs: S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, A. Nicoloiu, M. Plateanu, A. Muller, and S. P. Voinigescu
Publié dans: IEEE Journal of the Electron Devices Society, Numéro 18 May 2022, 2022, Page(s) 600 - 610, ISSN 2168-6734
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2022.3176205

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Auteurs: F. Bopp, C.Cullip, C. Thalacker, M. Lienhart, J. Schall, N. Bart, F. Sbresny, K. Boos, S.Rodt, D. Reuter, A. Ludwig, A. D. Wieck, S. Reitzenstein, F.Troiani, G. Goldoni, E. Molinari, K. Müller, J. J. Finley,
Publié dans: Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Numéro 2023, 2023, ISSN 2331-8422
Éditeur: ArXiv
DOI: 10.48550/arxiv.2303.12552

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Auteurs: T. Doan Nhut and D. Zito
Publié dans: IEEE Transactions on Circuits and Systems II: Express Briefs, Numéro vol. 70, no. 10, Oct. 2023, 2023, Page(s) 3812-3816, ISSN 1558-3791
Éditeur: IEEE
DOI: 10.1109/tcsii.2023.3291081

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Auteurs: Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Publié dans: Physical Review B, 2021, ISSN 2469-9969
Éditeur: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Auteurs: S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Publié dans: IEEE Electron Device Letters, 2019, Page(s) 1-1, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Auteurs: Filippo Troiani
Publié dans: Physical Review B, Numéro 100/15, 2019, ISSN 2469-9950
Éditeur: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Auteurs: Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Publié dans: IEEE Microwave and Wireless Components Letters, Numéro 30/1, 2020, Page(s) 50-53, ISSN 1531-1309
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Auteurs: Alexandru Müller; Alexandra Nicoloiu
Publié dans: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Éditeur: Academica – Romanian Academy Journal

Investigation of <i>p</i>- and <i>n</i>-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS at 2-4 K and 300 K

Auteurs: Shai Bonen, Suyash Pati Tripathi, Julie McIntosh, Thomas Jager, Sorin P. Voinigescu
Publié dans: IEEE Electron Device Letters, Numéro IEEE Electron Device Letters,, 2024, Page(s) 1-1, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3435380

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Auteurs: Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Publié dans: Physical Review B, 2021, ISSN 2469-9969
Éditeur: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Auteurs: Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Publié dans: IEEE Access, 2021, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Auteurs: L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Publié dans: Physical Review Applied, 2021, ISSN 2331-7019
Éditeur: American Physical Society
DOI: 10.1103/physrevapplied.16.054034

Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunnelin

Auteurs: A. Secchi and F. Troiani
Publié dans: Entropy, Numéro Vol. 82, 2023, ISSN 1099-4300
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e25010082