Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Informazioni relative al progetto

IQubits

ID dell’accordo di sovvenzione: 829005

DOI

10.3030/829005

Progetto chiuso

Data della firma CE 17 Dicembre 2018

Data di avvio 1 Gennaio 2019

Data di completamento 30 Aprile 2024

Finanziato da

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Costo totale

€ 3 180 707,50

Contributo UE

€ 2 688 375,00

Coordinato da

AKADEMIA GORNICZO-HUTNICZA IM. STANISLAWA STASZICA W KRAKOWIE
Poland

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (17)

Nanofabrication process optimization 2

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

Dissemination and exploitation plan 3

Report on dissemination and exploitation plan 3

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Epitaxy and III-N/FDSOI integration

Report on epitaxy optimization and III-N qubits integration with FDSOI CMOS technology.

Si and III-N 10nm qubit fabrication

Report on fabrication of Si and III-N 10nm qubits.

III-N SET temperature characterisation

Report on experimental characterization of III-N SET structures versus temperature.

Qubit optimization

Report on qubit optimization, quantum gate and readout fidelity.

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm III-N heteronanostructure qubits.

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Tunneling and spin-orbit coupling

Report on tailoring spin-orbit coupling and internet tunneling (k p modelling).

DC-220GHz 300&4K Si/III-N qubit tests 4

Final report on tests of 10nm Si and III-N qubits at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

DC-220GHz 300&4K FDSOI qubit tests 3

Report on tests of FDSOI qubits and ICs version 2 at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Demonstrators, pilots, prototypes (2)

Cryogenic measurement set-up (to 140 GHz & 4 K)

Arrangement of the cryogenic measurement set-up for S-parameters up to the frequency of 140 GHz and down to the temperature of 4 K.

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Websites, patent fillings, videos etc. (1)

Website and logo

Report on project website and logo.

Pubblicazioni

Conference proceedings (11)

A Compact TIA in 22nm FDSOI CMOS for Qubit Readout in Monolithic Quantum Processors

Autori: D. Zito and T. D. Nhut
Pubblicato in: IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2023, Numero 4-7 Dec. 2023, 2023, Pagina/e pp. 1-4, ISBN 979-8-3503-2649-9
Editore: IEEE
DOI: 10.1109/icecs58634.2023.10382853

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Autori: S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Pubblicato in: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Editore: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

Sub-mW 30GHz Variable-Gain LNA in 22nm FDSOI CMOS for Low-Power Tapered mm-Wave 5G/6G Phased-Array Receivers

Autori: M. Spasaro and D. Zito
Pubblicato in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numero 19-24 June 2022, 2022, Pagina/e 723-726, ISBN 978-1-6654-9613-1
Editore: IEEE
DOI: 10.1109/ims37962.2022.9865340

Cryogenic Compact Low-Power 60GHz Amplifier for Spin Qubit Control in Monolithic Silicon Quantum Processors

Autori: M. Spasaro, S. Bonen, G. Cooke, T. Jager, T. D. Nhut, D. Sufrà, S. P. Voinigescu, and D. Zito
Pubblicato in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numero 19-24 June 2022, 2022, Pagina/e 164-168, ISBN 978-1-6654-9613-1
Editore: IEEE
DOI: 10.1109/ims37962.2022.9865561

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Autori: L. Wu, H. Y. Hsu, and S.P. Voinigescu
Pubblicato in: IEEE International Microwave Symposium 2021, 2021
Editore: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Autori: M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Pubblicato in: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Pagina/e 111-114, ISBN 978-1-7281-1701-0
Editore: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Autori: Michele Spasaro, Domenico Zito
Pubblicato in: 2019 International Semiconductor Conference (CAS), 2019, Pagina/e 11-20, ISBN 978-1-7281-1888-8
Editore: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Autori: R.R. Severino, M. Spasaro, D. Zito
Pubblicato in: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Editore: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Autori: Matteo Bina, Andrea Padovani, Luca Larcher
Pubblicato in: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Editore: MDPI

IQubits: An All-in-One Integrated Qubit Platform in Commercial Ultra-Scaled Silicon Foundry Technologies for Scalable Monolithic Quantum Processors

Autori: D. Zito, S. Voinigescu, F. Troiani, E. Molinari, A. Muller, G. Konstantinidis, E. Iliopoulos, S. Dominici
Pubblicato in: European Quantum Technology Conference 2023, Numero 16-20 October 2023, 2023
Editore: European Quantum Flagship
DOI: 10.15488/16649

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

Autori: T. D. Nhut, S. Bonen, G. Cooke, T. Jager, M. Spasaro, D. Sufrà, S. P. Voinigescu, and D. Zito
Pubblicato in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Numero 19-24 June 2022, 2022, Pagina/e 168-171, ISBN 978-1-6654-9613-1
Editore: IEEE
DOI: 10.1109/ims37962.2022.9865577

Peer reviewed articles (21)

Theory of multidimensional quantum capacitance and its application to spin and charge discrimination in quantum dot arrays

Autori: A. Secchi and F. Troiani
Pubblicato in: Phys. Rev. B, Numero Vol. 107, Iss. 15 — 15 April 2023, 2023, ISSN 2469-9969
Editore: APS
DOI: 10.1103/physrevb.107.155411

CMOS integrated circuits for quantum information sciences

Autori: 10. J. Andres, M. Babaie, J.C Bardin, I. Bashir, G. Billiot, E. Blokhina, S. Bonen, E. Charbon, J. Chiaverini, I.L. Chuang, C. Degenhardt, D. Englund, L. Geck, L. Le Guevel, D. Ham, R. Han, M.I. Ibrahim, D. Krüger, K. M. Lei, A. Morel, D. Nielinger, G. Pillonet, J. M. Sage, F. Sebastiano, R.B. Staszewski, J. Stuart, A. Vladimirescu, P. Vliex, and S.P. Voinigescu
Pubblicato in: IEEE Transactions on Quantum Engineering, Numero vol. 4, 2023, 2023, Pagina/e 1-30, ISSN 2689-1808
Editore: IEEE
DOI: 10.1109/tqe.2023.3290593

Envelope-function theory of inhomogeneous strain in semiconductor nanostructures

Autori: A. Secchi and F. Troiani
Pubblicato in: Mesoscale and Nanoscale Physics, Numero Vol. 110, Is. 4, 15 July 2024, 2023, ISSN 2331-8422
Editore: AxXiv
DOI: 10.48550/arxiv.2312.15967

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Autori: Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Pubblicato in: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Editore: IEEE
DOI: 10.1109/lmwc.2021.3067003

Quantum estimation and remote charge sensing with a hole-spin qubit in silicon

Autori: G. Forghieri, A. Secchi, A. Bertoni, P. Bordone, and F. Troiani
Pubblicato in: Phys. Rev. Research, Numero Vol. 5, Is. 4, November - December 2023, 2023, ISSN 2643-1564
Editore: APS
DOI: 10.1103/physrevresearch.5.043159

0.52-mW 30-GHz LNA in 22-nm FDSOI CMOS

Autori: M. Spasaro and D. Zito
Pubblicato in: IEEE Transactions on Circuits and Systems II: Express Briefs, Numero vol. 70, no. 10, Oct. 2023, 2023, Pagina/e 3752-3756, ISSN 1558-3791
Editore: IEEE
DOI: 10.1109/tcsii.2023.3288354

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Autori: Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Editore: IEEE
DOI: 10.1109/tmtt.2021.3094189

Cryogenic Characterization of the High-Frequency and Noise Performance of SiGe HBTs from DC to 70 GHz and Down to 2 K

Autori: S. Bonen, G. Cooke, T. Jager, A. Bharadwaj, S. Pati Tripathi, D. Céli, P. Chevalier, P. Schvan, and S. P. Voinigescu
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero Vol. 32, N.6, 2022, Pagina/e pp. 666-669, ISSN 1558-1764
Editore: IEEE
DOI: 10.1109/lmwc.2022.3160716

Characterization and Modelling of Quantum Dot Behaviour in FDSOI Devices

Autori: S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, A. Nicoloiu, M. Plateanu, A. Muller, and S. P. Voinigescu
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 18 May 2022, 2022, Pagina/e 600 - 610, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2022.3176205

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Autori: F. Bopp, C.Cullip, C. Thalacker, M. Lienhart, J. Schall, N. Bart, F. Sbresny, K. Boos, S.Rodt, D. Reuter, A. Ludwig, A. D. Wieck, S. Reitzenstein, F.Troiani, G. Goldoni, E. Molinari, K. Müller, J. J. Finley,
Pubblicato in: Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Numero 2023, 2023, ISSN 2331-8422
Editore: ArXiv
DOI: 10.48550/arxiv.2303.12552

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Autori: T. Doan Nhut and D. Zito
Pubblicato in: IEEE Transactions on Circuits and Systems II: Express Briefs, Numero vol. 70, no. 10, Oct. 2023, 2023, Pagina/e 3812-3816, ISSN 1558-3791
Editore: IEEE
DOI: 10.1109/tcsii.2023.3291081

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Autori: Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Pubblicato in: Physical Review B, 2021, ISSN 2469-9969
Editore: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Autori: S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Pubblicato in: IEEE Electron Device Letters, 2019, Pagina/e 1-1, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Autori: Filippo Troiani
Pubblicato in: Physical Review B, Numero 100/15, 2019, ISSN 2469-9950
Editore: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Autori: Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 30/1, 2020, Pagina/e 50-53, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Autori: Alexandru Müller; Alexandra Nicoloiu
Pubblicato in: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Editore: Academica – Romanian Academy Journal

Investigation of <i>p</i>- and <i>n</i>-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS at 2-4 K and 300 K

Autori: Shai Bonen, Suyash Pati Tripathi, Julie McIntosh, Thomas Jager, Sorin P. Voinigescu
Pubblicato in: IEEE Electron Device Letters, Numero IEEE Electron Device Letters,, 2024, Pagina/e 1-1, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3435380

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Autori: Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Pubblicato in: Physical Review B, 2021, ISSN 2469-9969
Editore: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Autori: Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Pubblicato in: IEEE Access, 2021, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Autori: L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Pubblicato in: Physical Review Applied, 2021, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.16.054034

Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunnelin

Autori: A. Secchi and F. Troiani
Pubblicato in: Entropy, Numero Vol. 82, 2023, ISSN 1099-4300
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e25010082