Skip to main content
European Commission logo print header

A predicting platform for designing semiconductor quantum devices

Periodic Reporting for period 1 - PRESQUE (A predicting platform for designing semiconductor quantum devices)

Okres sprawozdawczy: 2019-09-01 do 2021-08-31

This project is concerned with the development of a simulation model that is able to solve for the Physics that occurs inside a Quantum Point Contact, a basic component in an electron flying qubit device.

The objective is i) to provide the first concerted demonstration of quantitative calculations on semiconducting quantum devices, in agreement with experimental data, and ii) setting-up the procedures for predicting optimum designs for various components of this semiconducting quantum technology.

This objective is of specific interest to the EU digital economy, whose simulation infrastructure on semiconducting qubits (currently considered its specialty) is lagging behind equivalent technologies undertaken by other non-EU countries. It was therefore a timely achievement to support and expand the present quantum technology infrastructure, a strategic goal for the EU.
A step-by-step procedure was adopted for this project, with the following stages:

- The simulation software that is currently being developed in the group of the supervisor was tested, and its functionality was compared with commercial software created by the EU company nextnano.

- A large set of experimental results were progressively analysed from the beginning of the project to the end. These results were also incorporated into the simulation process by setting up appropriate calibration procedures.

- The Physics describing the operation of the devices was carefully incorporated into the simulation model, using previous theoretical arguments and based on experimental evidence.

- The simulation results were compared to the experimental data and further simulations and analysis were performed in order to extract sound evidence of the correct operation of the simulation model.

- Smaller simulation models were set-up (with smaller running overhead) to provide large amounts of simulation data for the optimization of components that can be used for the electron flying qubit technology.
Beside the advances that quantum computers promise to deliver in chemistry, materials science, pharmaceutics and other domains, being considered a disruptive technology, they can potentially transform the economic landscape of the countries that develop them.

In this project, a structured simulation procedure for semiconducting qubits, that can be generalized and easily re-used, was created. This is the first time such a venture is completed on this scale, and also resulted in solving a riddle over what mostly defines the voltage at which the onset of electron transport inside Quantum Point Contacts (components of the electron flying qubits technology) takes place. With multiple comparisons between simulation with experiment, strong evidence was given over the physics that defines the operation of the devices.

For the field of electron flying qubits, the simulations can be proven essential in the development of the former as a mature technology, with competitive error rates, that in some cases may surpass the equivalent CMOS spin qubit. The models can also be expanded in order to simulate not only other semiconducting technologies, but also hybrid semiconducting/superconducting structures.

These results have the potential to establish the simulation procedure followed in the Quantum Engineering domain, which can aid in the faster development of semiconducting quantum technologies in the lab. They are already being undertaken by the collaborating experimental group and will soon be available to other groups worldwide. The most essential gain through this project is the reduction in the time and resources spent in the lab to find functioning and optimum designs for devices. They can aid in testing new theories for qubit devices, as well as scaling up those already existing.
Schematic illustration of electron passing through a Quantum Point Contact