Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate Program

Project Information

DESIGN-EID

Grant agreement ID: 860095

DOI 10.3030/860095

Project closed

EC signature date 28 August 2019

Start date 1 January 2020

End date 31 December 2023

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost € 878 988,96

EU contribution € 878 988,96

Coordinated by

UNIVERSITY OF GLASGOW
United Kingdom

Deliverables

Documents, reports (6)

Final report on training activities
1st - Report on CDE activities

First report on CDE activities

Final report on CDE activities

D7.4 “Report on CDE activities” - 2nd report

Communication, dissemination, exploitation (CDE) activities plan
List of recruited ESRs
1st Report on training activities

D54 Training activities

Other (2)

Supervisory Board of the network

Supervisory Board of the network – due date month 2

Workshop

To organise a workshop

Websites, patent fillings, videos etc. (1)

Website

Publications

Conference proceedings (3)

Machine Learning based Nanowire Classification method based on Nanowire Array Scanning Electron Microscope Images

Author(s): Enrico Brugnolotto ,Preslav Aleksandrov ,Marilyne Sousa ,Vihar P. Georgiev
Published in: 2023
Publisher: Tech rxiv
DOI: 10.36227/techrxiv.24107049.v1

Impact of different types of planar defects on current transport in Indium Phosphide (InP)

Author(s): Christian Dam Vedel, Enrico Brugnolotto, Soren Smidstrup, Vihar P. Georgiev
Published in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, Page(s) 1-5, ISBN 978-1-6654-3745-5
Publisher: IEEE
DOI: 10.1109/eurosoi-ulis53016.2021.9560698

Evaluation of material profiles for III-V nanowire photodetectors

Author(s): Cristina Martinez-Oliver, Kirsten E. Moselund, Vihar P. Georgiev
Published in: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2021, Page(s) 39-40, ISBN 978-1-6654-1276-6
Publisher: IEEE
DOI: 10.1109/nusod52207.2021.9541533

Peer reviewed articles (3)

Shockley-Read-Hall recombination and trap levels in In 0.53 Ga0.47 As point defects from first principles

Author(s): Christian Dam Vedel, Tue Gunst, Søren Smidstrup, and Vihar P. Georgiev
Published in: PHYSICAL REVIEW B, 2023, ISSN 2469-9969
Publisher: PHYSICAL REVIEW B
DOI: 10.1103/physrevb.108.094113

In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates

Author(s): Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design
Published in: Enlighten, 2023, ISSN 1528-7483
Publisher: American Chemical Society
DOI: 10.1021/acs.cgd.3c00806

First-principles investigation of polytypic defects in InP

Author(s): Christian Dam Vedel; Søren Smidstrup; Vihar P. Georgiev
Published in: Crossref, Issue 10, 2022, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-022-24239-w

Other (2)

InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm

Author(s): Preksha Tiwari; Anna Fischer; Svenja Mauthe; Enrico Brugnolotto; Noelia Vico Triviño; Marilyne Sousa; Daniele Caimi;
Published in: IEEE, 2021
Publisher: IEEE
DOI: 10.1109/cleo/europe-eqec52157.2021.9541796

Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Author(s): Enrico Brugnolotto a b, Markus Scherrer a, Heinz Schmid a, Vihar Georgiev b, Marilyne Sousa a
Published in: ELSEVIER, 2022
Publisher: Science Direct
DOI: 10.1016/j.jcrysgro.2022.127015