Shockley-Read-Hall recombination and trap levels in In 0.53 Ga0.47 As point defects from first principles
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Author(s):
Christian Dam Vedel, Tue Gunst, Søren Smidstrup, and Vihar P. Georgiev
Published in:
PHYSICAL REVIEW B, 2023, ISSN 2469-9969
Publisher:
PHYSICAL REVIEW B
DOI:
10.1103/physrevb.108.094113
In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates
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Author(s):
Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design
Published in:
Enlighten, 2023, ISSN 1528-7483
Publisher:
American Chemical Society
DOI:
10.1021/acs.cgd.3c00806
First-principles investigation of polytypic defects in InP
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Author(s):
Christian Dam Vedel; Søren Smidstrup; Vihar P. Georgiev
Published in:
Crossref, Issue 10, 2022, ISSN 2045-2322
Publisher:
Nature Publishing Group
DOI:
10.1038/s41598-022-24239-w