Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate Program

Informations projet

DESIGN-EID

N° de convention de subvention: 860095

DOI 10.3030/860095

Projet clôturé

Date de signature de la CE 28 Août 2019

Date de début 1 Janvier 2020

Date de fin 31 Decembre 2023

Financé au titre de

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coût total € 878 988,96

Contribution de l’UE € 878 988,96

Coordonné par

UNIVERSITY OF GLASGOW
United Kingdom

Livrables

Documents, reports (6)

Final report on training activities
1st - Report on CDE activities

First report on CDE activities

Final report on CDE activities

D7.4 “Report on CDE activities” - 2nd report

Communication, dissemination, exploitation (CDE) activities plan
List of recruited ESRs
1st Report on training activities

D54 Training activities

Other (2)

Supervisory Board of the network

Supervisory Board of the network – due date month 2

Workshop

To organise a workshop

Websites, patent fillings, videos etc. (1)

Website

Publications

Conference proceedings (3)

Machine Learning based Nanowire Classification method based on Nanowire Array Scanning Electron Microscope Images

Auteurs: Enrico Brugnolotto ,Preslav Aleksandrov ,Marilyne Sousa ,Vihar P. Georgiev
Publié dans: 2023
Éditeur: Tech rxiv
DOI: 10.36227/techrxiv.24107049.v1

Impact of different types of planar defects on current transport in Indium Phosphide (InP)

Auteurs: Christian Dam Vedel, Enrico Brugnolotto, Soren Smidstrup, Vihar P. Georgiev
Publié dans: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, Page(s) 1-5, ISBN 978-1-6654-3745-5
Éditeur: IEEE
DOI: 10.1109/eurosoi-ulis53016.2021.9560698

Evaluation of material profiles for III-V nanowire photodetectors

Auteurs: Cristina Martinez-Oliver, Kirsten E. Moselund, Vihar P. Georgiev
Publié dans: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2021, Page(s) 39-40, ISBN 978-1-6654-1276-6
Éditeur: IEEE
DOI: 10.1109/nusod52207.2021.9541533

Peer reviewed articles (3)

Shockley-Read-Hall recombination and trap levels in In 0.53 Ga0.47 As point defects from first principles

Auteurs: Christian Dam Vedel, Tue Gunst, Søren Smidstrup, and Vihar P. Georgiev
Publié dans: PHYSICAL REVIEW B, 2023, ISSN 2469-9969
Éditeur: PHYSICAL REVIEW B
DOI: 10.1103/physrevb.108.094113

In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates

Auteurs: Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design
Publié dans: Enlighten, 2023, ISSN 1528-7483
Éditeur: American Chemical Society
DOI: 10.1021/acs.cgd.3c00806

First-principles investigation of polytypic defects in InP

Auteurs: Christian Dam Vedel; Søren Smidstrup; Vihar P. Georgiev
Publié dans: Crossref, Numéro 10, 2022, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-022-24239-w

Other (2)

InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm

Auteurs: Preksha Tiwari; Anna Fischer; Svenja Mauthe; Enrico Brugnolotto; Noelia Vico Triviño; Marilyne Sousa; Daniele Caimi;
Publié dans: IEEE, 2021
Éditeur: IEEE
DOI: 10.1109/cleo/europe-eqec52157.2021.9541796

Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Auteurs: Enrico Brugnolotto a b, Markus Scherrer a, Heinz Schmid a, Vihar Georgiev b, Marilyne Sousa a
Publié dans: ELSEVIER, 2022
Éditeur: Science Direct
DOI: 10.1016/j.jcrysgro.2022.127015