Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate Program

Risultati finali

Final report on training activities
1st - Report on CDE activities

First report on CDE activities

D7.4 “Report on CDE activities” - 2nd report

Communication, dissemination, exploitation (CDE) activities plan
List of recruited ESRs
1st Report on training activities

D54 Training activities

Supervisory Board of the network

Supervisory Board of the network – due date month 2

Workshop

To organise a workshop

Website

Pubblicazioni

Machine Learning based Nanowire Classification method based on Nanowire Array Scanning Electron Microscope Images

Autori: Enrico Brugnolotto ,Preslav Aleksandrov ,Marilyne Sousa ,Vihar P. Georgiev
Pubblicato in: 2023
Editore: Tech rxiv
DOI: 10.36227/techrxiv.24107049.v1

Impact of different types of planar defects on current transport in Indium Phosphide (InP)

Autori: Christian Dam Vedel, Enrico Brugnolotto, Soren Smidstrup, Vihar P. Georgiev
Pubblicato in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, Pagina/e 1-5, ISBN 978-1-6654-3745-5
Editore: IEEE
DOI: 10.1109/eurosoi-ulis53016.2021.9560698

Evaluation of material profiles for III-V nanowire photodetectors

Autori: Cristina Martinez-Oliver, Kirsten E. Moselund, Vihar P. Georgiev
Pubblicato in: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2021, Pagina/e 39-40, ISBN 978-1-6654-1276-6
Editore: IEEE
DOI: 10.1109/nusod52207.2021.9541533

Shockley-Read-Hall recombination and trap levels in In 0.53 Ga0.47 As point defects from first principles

Autori: Christian Dam Vedel, Tue Gunst, Søren Smidstrup, and Vihar P. Georgiev
Pubblicato in: PHYSICAL REVIEW B, 2023, ISSN 2469-9969
Editore: PHYSICAL REVIEW B
DOI: 10.1103/physrevb.108.094113

In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates

Autori: Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design
Pubblicato in: Enlighten, 2023, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.3c00806

First-principles investigation of polytypic defects in InP

Autori: Christian Dam Vedel; Søren Smidstrup; Vihar P. Georgiev
Pubblicato in: Crossref, Numero 10, 2022, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-022-24239-w

InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm

Autori: Preksha Tiwari; Anna Fischer; Svenja Mauthe; Enrico Brugnolotto; Noelia Vico Triviño; Marilyne Sousa; Daniele Caimi;
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/cleo/europe-eqec52157.2021.9541796

Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Autori: Enrico Brugnolotto a b, Markus Scherrer a, Heinz Schmid a, Vihar Georgiev b, Marilyne Sousa a
Pubblicato in: ELSEVIER, 2022
Editore: Science Direct
DOI: 10.1016/j.jcrysgro.2022.127015

Risultati finali

Pubblicazioni

Condividi questa pagina

Scarica