Project description DEENESFRITPL A new approach to nanoscale patterning Nanoscale patterning of materials is becoming crucial for many devices, especially in the back end of line. Given Intel’s latest 10 nm node, new ways of mastering selective deposition of materials at the nanoscale need to be developed. Selective deposition may lead to a paradigm shift in patterning at future semiconductor technology nodes. With this in mind, the EU-funded NADIA project aims to demonstrate spatial control over a deposited thin film. To do this, it will make use of area-selective deposition (ASD) by atomic layer deposition. This has a number of possible benefits for future device processing and can help to overcome process integration challenges at the sub-10 nm nodes. Show the project objective Hide the project objective Objective The need for area selective deposition (ASD): Nanoscale patterning of materials is becoming a key issue for a broad range of devices, especiallyin the back end of line (BEOL). With the introduction of Intel’s latest 10nm node earlier this year, it is vital to develop new ways to master selectivedeposition of materials at the nanoscale, preferably without the use of lithographic and etching steps, as they can be time-consuming, expensiveand mainly subtractive processes. Novel concepts are thus needed to enhance local deposition while decreasing the use of expensivetechnological steps. Selective deposition is expected to lead to a paradigm shift in patterning at future semiconductor technology nodes. AreaSelective Deposition (ASD) by ALD brings several potential benefits for future device processing and provides a route to overcome processintegration challenges at the sub 10 nm nodes, i.e. overlay and lithographic misalignment related issues both in the front end of line (FEOL) andback end of line (BEOL) schemes. Essentially, what ASD gives is spatial control over a deposited thin film. This is the objective of the innovativeNADIA proposal which is now a very relevant topic. Fields of science engineering and technologymaterials engineeringcoating and filmsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivity Keywords Self-assembled Monolayers (SAM) Area Selective Deposition (ASD) Atomic Layer Etch (ALE) nanoelectronics nano patterning cyclic passivation 10nm technology node interconnects back end of line (BEOL) Programme(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Topic(s) MSCA-IF-2019 - Individual Fellowships Call for proposal H2020-MSCA-IF-2019 See other projects for this call Funding Scheme MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF) Coordinator INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM Net EU contribution € 178 320,00 Address KAPELDREEF 75 3001 Leuven Belgium See on map Region Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven Activity type Research Organisations Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Total cost € 178 320,00