Synthesis and integration of wafer-scale van der Waals heterostructures for industrial nanoelectronic devices

Project Information

2D-HETERO

Grant agreement ID: 894840

DOI

10.3030/894840

Project closed

EC signature date 30 March 2020

Start date 1 May 2020

End date 30 April 2022

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost

€ 166 320,00

EU contribution

€ 166 320,00

Coordinated by

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

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Publications

Conference proceedings (4)

Extreme scaling enabled by TMD transistors: variability challenges

Author(s): Q. Smets, G. Arutchelvan, T. Schram, D. Verreck, B. Groven, D. Cott, Z. Ahmed, Y. Shi, S. Sutar, A. Nalin Mehta, D. Lin, I. Asselberghs, I. Radu
Published in: IEEE Silicon Nanoelectronics Workshop (SNW), 2021, ISSN 2169-3536
Publisher: IEEE

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

Author(s): X. Wu, D. Cott, Z. Lin, Y. Shi, B. Groven, P. Morin, D. Verreck, Q. Smets, H. Medina, S. Sutar, I. Asselberghs, I. Radu, D. Lin
Published in: IEEE International Electron Devices Meeting (IEDM), 2021, ISSN 2169-3536
Publisher: IEEE
DOI: 10.1109/iedm19574.2021.9720695

Sources of variability in scaled MoS2 FETs

Author(s): Q. Smets, D. Verreck, Y. Shi, G. Arutchelvan, B. Groven, X. Wu, S. Sutar, S. Banerjee, A. N. Mehta, D. Lin, I. Asselberghs, I. Radu
Published in: IEEE International Electron Devices Meeting (IEDM), 2020, ISSN 2169-3536
Publisher: IEEE
DOI: 10.1109/iedm13553.2020.9371890

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

Author(s): Y. Shi, B. Groven, Q. Smets, S. Sutar, S. Banerjee, H. Medina, X. Wu, C. Huyghebaert, S. Brems, D. Lin, P. Morin, M. Caymax, I. Asselberghs, I. Radu
Published in: IEEE International Electron Devices Meeting (IEDM), 2021, ISSN 2169-3536
Publisher: IEEE
DOI: 10.1109/iedm19574.2021.9720676

Peer reviewed articles (1)

Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics

Author(s): Y. Shi, B. Groven, J. Serron, X. Wu, A. N. Mehta, A. Minj, S. Sergeant, H. Han, I. Asselberghs, D. Lin, S. Brems, C. Huyghebaert, P. Morin, I. Radu, M. Caymax
Published in: ACS Nano, 2021, Page(s)  9482–9494, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.0c07761