Extreme scaling enabled by TMD transistors: variability challenges
Autori:
Q. Smets, G. Arutchelvan, T. Schram, D. Verreck, B. Groven, D. Cott, Z. Ahmed, Y. Shi, S. Sutar, A. Nalin Mehta, D. Lin, I. Asselberghs, I. Radu
Pubblicato in:
IEEE Silicon Nanoelectronics Workshop (SNW), 2021, ISSN 2169-3536
Editore:
IEEE
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg
(si apre in una nuova finestra)
Autori:
X. Wu, D. Cott, Z. Lin, Y. Shi, B. Groven, P. Morin, D. Verreck, Q. Smets, H. Medina, S. Sutar, I. Asselberghs, I. Radu, D. Lin
Pubblicato in:
IEEE International Electron Devices Meeting (IEDM), 2021, ISSN 2169-3536
Editore:
IEEE
DOI:
10.1109/iedm19574.2021.9720695
Sources of variability in scaled MoS2 FETs
(si apre in una nuova finestra)
Autori:
Q. Smets, D. Verreck, Y. Shi, G. Arutchelvan, B. Groven, X. Wu, S. Sutar, S. Banerjee, A. N. Mehta, D. Lin, I. Asselberghs, I. Radu
Pubblicato in:
IEEE International Electron Devices Meeting (IEDM), 2020, ISSN 2169-3536
Editore:
IEEE
DOI:
10.1109/iedm13553.2020.9371890
Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening
(si apre in una nuova finestra)
Autori:
Y. Shi, B. Groven, Q. Smets, S. Sutar, S. Banerjee, H. Medina, X. Wu, C. Huyghebaert, S. Brems, D. Lin, P. Morin, M. Caymax, I. Asselberghs, I. Radu
Pubblicato in:
IEEE International Electron Devices Meeting (IEDM), 2021, ISSN 2169-3536
Editore:
IEEE
DOI:
10.1109/iedm19574.2021.9720676
