Spatially resolved subsurface characterization of semiconductor wafers by high resolution x-ray diffraction

Projektinformationen

DUSAN KORYTAR

ID Finanzhilfevereinbarung: G5TR-CT-2000-00046

Projekt abgeschlossen

Startdatum 28 Februar 2001

Enddatum 27 Februar 2002

Finanziert unter

• Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002"

Gesamtkosten € 128 000,00

EU-Beitrag € 128 000,00

Koordiniert durch

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
Germany

Ziel

The main knowledge and technology to be transferred is the applicant's experience in characterization of grown-in and process-induced defects and stresses in semiconductors by means of X-ray diffraction techniques and his potential to contribute significantly to the research of surface damage depth profiling and lateral mapping after wafer surface preparation. His multiple beam diffracting technique can be useful base for the development of new techniques related to subsurface damage profiling and characterization and understanding of stresses and defects generation and treatment in semiconductor wafers.

Wissenschaftliches Gebiet

• natural sciences › physical sciences › electromagnetism and electronics › semiconductivity

Programm/Programme

• FP5-GROWTH - Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002"

Thema/Themen

• 1.1.3.-5. - RTD Activities of a Generic Nature : materials and their technologies for production and transformation and new and improved materials and production technologies in the steel field

Aufforderung zur Vorschlagseinreichung

Data not available

Finanzierungsplan

RGI - Research grants (individual fellowships)

Koordinator

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

• EU-Beitrag: Keine Daten
• Adresse: Krügerstraße 22 ; 01326 WEISSIG - DRESDEN ; Deutschland
• Gesamtkosten: Keine Daten