Spatially resolved subsurface characterization of semiconductor wafers by high resolution x-ray diffraction

Informacje na temat projektu

DUSAN KORYTAR

Identyfikator umowy o grant: G5TR-CT-2000-00046

Projekt został zamknięty

Data rozpoczęcia 28 Lutego 2001

Data zakończenia 27 Lutego 2002

Finansowanie w ramach

• Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002"

Koszt całkowity € 128 000,00

Wkład UE € 128 000,00

Koordynowany przez

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
Germany

Cel

The main knowledge and technology to be transferred is the applicant's experience in characterization of grown-in and process-induced defects and stresses in semiconductors by means of X-ray diffraction techniques and his potential to contribute significantly to the research of surface damage depth profiling and lateral mapping after wafer surface preparation. His multiple beam diffracting technique can be useful base for the development of new techniques related to subsurface damage profiling and characterization and understanding of stresses and defects generation and treatment in semiconductor wafers.

Dziedzina nauki

• natural sciences › physical sciences › electromagnetism and electronics › semiconductivity

Program(-y)

• FP5-GROWTH - Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002"

Temat(-y)

• 1.1.3.-5. - RTD Activities of a Generic Nature : materials and their technologies for production and transformation and new and improved materials and production technologies in the steel field

Zaproszenie do składania wniosków

Data not available

System finansowania

RGI - Research grants (individual fellowships)

Koordynator

FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

• Wkład UE: Brak danych
• Adres: Krügerstraße 22 ; 01326 WEISSIG - DRESDEN ; Niemcy
• Koszt całkowity: Brak danych