Objective
EUV lithography offers considerable potential as a method to image ultra-fine structures with dimensions well below 100 nm. In this method short wavelength radiation in the 5 to 20 nm interval is employed to produce diffraction-limited images by special EUV optical systems. Before this technique can be utilized in, for example, semiconductor fabrication, vigorous development of fundamental physical processes is required. These are primarily in the area of the source and the optics, the principal elements which will operate at substantially shorter wavelengths than current imaging systems.
Development of a laser plasma source with high power in the EUV spectral range has proved to be a promising approach. This room-scale and economical source is attractive for basic research in general and for lithography in particular. However, the contamination produced by the source requires additional understanding and the application of mitigation methods before delicate optics can be used safely.
The aim in this project is to combine the source with a high-transmission system of curved multilayer EUV mirrors which will enable the demonstration of diffraction limited resolution of below 100 nm. This goal is now attainable for two main reasons: the recent progress in the development of laser drivers (the use of compact subkilowatt excimer lasers is part of this proposal) and multilayer coating facilities (with the capability to produce coatings on substrates with strong curvature or large dimensions); and the combination of experience, technologies and equipment of the laboratories participating, covering the major physics themes involved. These include spectrally selective enhancement of source intensity, suppression of contamination of optics exposed to the source, multilayer fabrication and analysis methods for a large area and strongly curved mirrors, and optimization of EUV optical systems with high numerical apertures.
In the framework of the project the following work will be done: specification and optimisation of source parameters and of optical components; fabrication of thin windows; effects of temperature on multilayer optics; spectroscopic determination of physical parameters of the laser plasma EUV source; development and manufacture of elements for UV and EUV optical systems; fabrication of reflection and transmission EUV masks; investigation and optimization of laser plasma source radiation parameters for EUVL; theoretical development of a gas-dynamical technique for debris suppression; development of techniques for fabrication and characterization of spherical multilayer mirrors for EUVL; and manufacture of experimental samples.
Fields of science (EuroSciVoc)
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Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
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Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Call for proposal
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Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Funding Scheme
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Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
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Coordinator
3439 MN Nieuwegein
Netherlands
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.