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Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Project description

High-performance power transistor technology at low cost

Silicon has been the workhorse of power transistor technology, and it remains a cost-effective leader for many applications across all voltage ranges. However, its inherent material properties are becoming a barrier to today’s requirements for increased power densities and higher efficiencies, particularly in the fast-growing areas of electric vehicles, renewable energy and data centres. Wide band gap (WBG) semiconductor materials can overcome these limitations. The EU-funded YESvGaN project is developing innovative WBG technology utilising vertical gallium nitride transistors on low-cost substrates such as silicon that will unite enhanced performance with low cost.

Objective

YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energies and data centers. In many applications requiring power transistors with high voltage and current rating (600…1200V, ~100A), silicon IGBT technology is nowadays used due to cost considerations accepting its lower efficiency compared to WBG solutions. The main objective of YESvGaN is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. To this end, the entire value chain from substrate, epitaxy, process technology, interconnection technology to application in relevant power electronic systems is addressed. YESvGaN clusters the relevant competences along the value chain in a consortium of large companies, SMEs and institutes from seven European countries.

Fields of science (EuroSciVoc)

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Keywords

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Programme(s)

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Topic(s)

Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.

Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

RIA - Research and Innovation action

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) H2020-ECSEL-2020-2-RIA-two-stage

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Coordinator

ROBERT BOSCH GMBH
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 611 629,06
Address
ROBERT-BOSCH-PLATZ 1
70839 Gerlingen-Schillerhoehe
Germany

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Region
Baden-Württemberg Stuttgart Ludwigsburg
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 2 446 516,25

Participants (27)

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