Trusted European SiC Value Chain for a greener Economy

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC

Author(s): V.S Prudkovskiy, R. Templier, A. Moulin, N. Troutot, G. Gelineau, S. Huet, V H. Le, K. Mony, G. Lapertot, M. Delcroix, S. Caridroit, S. Barbet, J. Widiez
Published in: 2023
Publisher: ICSCRM 2023

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

Author(s): Malle Le Cunff, Franois Rieutord, Didier Landru, Oleg Kononchuk and Nikolay Cherkashin
Published in: 2024
Publisher: ICSCRM

Adaptive Resonant Controller for a Three-Phase PFC Converter for an On-Board Charge Application

Author(s): Rami Troudi, Kelly Ribeiro de Faria, Moctar Coulibaly
Published in: 2024
Publisher: PCIM Europe

Processing and electrical characterization of SiC-on-Insulator structures

Author(s): Guillaume GELINEAU, Cédric MASANTE, Emmanuel Rolland, Sophie BARBET, Lucie CORBIN, Anne-Marie PAPON, Simon CARIDROIT, Mathieu DELCROIX, Stéphanie HUET, Alexandre MOULIN, Vladimir PRUDKOVSKIY, Nicolas TROUTOT, Séverin ROUCHIER, Loïc TURCHETTI, Karine MONY, Julie WIDIEZ
Published in: 2023
Publisher: ICSCRM 2023

New Die Attach Materials: Silver and Silver/ Copper sintering pastes

Author(s): B. Rábay, A. Stelzer
Published in: 2022
Publisher: PCIM Europe Conference 2022
DOI: 10.30420/565822280

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing

Author(s): E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast , S. Shahidi , G. Simpson
Published in: 2024
Publisher: ICSCRM

Smart CutTM SiC: enabling a larger adoption of SiC substrate for power devices

Author(s): E. Guiot et al
Published in: APEC 2022, 2022
Publisher: IEEE

Gate Oxide Performance and Reliability on SmartSiC Wafers and the Influence of RTA processing on Gate Oxide Lifetime

Author(s): T. Becker, M. Rommel, H. Schlichting, E. Guiot and F. Allibert
Published in: 2024
Publisher: ICSCRM

Benchmarking experiment of substrate quality including SmartSiCTM wafers by epitaxy in a batch reactor

Author(s): B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
Published in: Solid State Phenomena,, Issue Volume 342, 2022, Page(s) 91-98, ISSN 1662-9779
Publisher: Trans Tech Publications Ltd
DOI: 10.4028/v-868lqn

Efficiency, Volume and CO2 Emissions Comparison in a PFC Converter with an Active Filter Solution for OBC Application

Author(s): Kelly Ribeiro de Faria, Jean-Raphael Capounda, Vineel Rajagopal, Pascal Menegazzi, Benjamin Paul, Nabil Kamil, Soleiman Galeshi, Norbert Messi
Published in: 2024
Publisher: PCIM Europe

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates

Author(s): G. Bellocchi, S. Rascuna`, P. Mancuso, G. Arena, M. Saggio G. Picun, E. Guiot, W. Schwarzenbach
Published in: 2024
Publisher: ICSCRM

Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

Author(s): Dr. Bernd Dielacher (presenter), Péter Kerepesi
Published in: 2024
Publisher: PE International 2024 conference

Analysis of SysML-based Product Development Collaborations in Cross-Company Value Creation Network

Author(s): MOLLAHASSANI, D., BOSSE. R., GÖBEL, J.C.
Published in: prostep ivip SYMPOSIUM, 2023
Publisher: prostep ivip

Comparison of High Frequency Three Phase Transformer Technologiesfor High Power Density On Board Chargers

Author(s): Wendell da Cunha Alves, Norbert Messi
Published in: 2023
Publisher: PCIM Europe

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Author(s): G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Published in: Materials Science Forum, Issue 1089(2), 2022, Page(s) 71-79, ISSN 1662-9752
Publisher: Trans Tech Publications Ltd
DOI: 10.4028/p-026sj4

Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

Author(s): Dominik Sumkötter, Mario Wollschläger, Marius Köhler, Marcel Lawniczak, Johannes Weickmann, Kurt-Georg Besendörfer, Nicolas Heuck
Published in: 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC), 2024, Page(s) 596-602
Publisher: IEEE
DOI: 10.1109/eptc59621.2023.10457720

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Author(s): Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Published in: 2023
Publisher: EPE

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Author(s): Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Published in: EPE 2023, 2023
Publisher: EPE 2023

SmartSiC 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Author(s): Eric Guiot , Frdric Allibert, Jrgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin, Walter Schwarzenbach
Published in: 2024
Publisher: PCIM

Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

Author(s): Michael Curkin, Marius Köhler, Silke Kraft, Jens Mueller, Kurt-Georg Besendoerfer, Nicolas Heuck
Published in: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, Page(s) 1682-1688
Publisher: IEEE
DOI: 10.1109/ectc51909.2023.00286

Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

Author(s): H. Biard, W. Schwarzenbach, S. Odoul, I. Radu,A. Potier, M. Ferrato, E. Guajioty
Published in: Diffusion and Defect Data Pt.B: Solid State Phenomena, Issue 344(12), 2022, Page(s) 47-52, ISSN 1662-9779
Publisher: Trans Tech Publications Ltd
DOI: 10.4028/p-65127n

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Author(s): G. GELINEAU, J. WIDIEZ, E. ROLLAND, K. VLADIMIROVA, A. MOULIN, V. PRUDKOVSKIY, N. TROUTOT, P. GERGAUD, D. MARIOLLE, S. BARBET, V. AMALBERT, G. LAPERTOT, K. MONY, S. ROUCHIER, R. BOULET, G. BERRE, W .SCHWARZENBACH, Y. BOGUMILOWICZ
Published in: 2022
Publisher: ICSCRM

Automotive Charger Grid-Forming Control Opportunities for G2V and V2X Applications

Author(s): Elie Fayad, Damian Sal y Rosas, Antoine Bruyere, Fredy Poirier
Published in: 2023 IEEE Vehicle Power and Propulsion Conference (VPPC), 2024, Page(s) 1-6
Publisher: IEEE
DOI: 10.1109/vppc60535.2023.10403262

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

Author(s): M. Alaluss, C. Böhm, P. Heimler, T. Basler, A. Elsayed, K. Oberdieck, S. Goel
Published in: 2024
Publisher: ICSCRM

SmartSiC : a greener, faster and better technology for SiC

Author(s): Olivier BONNIN
Published in: 2023
Publisher: ICSCRM 2023

SmartSiC substrate : increasing SiC MOSFETs current density from device to module level

Author(s): E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach; T. Erlbacher
Published in: 2023
Publisher: ICSCRM

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Author(s): V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Published in: 2024
Publisher: ICSCRM

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

Author(s): A. Abbas, C. Le Royer, R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez, S. Gningue, S. Rouchier, F. Allibert, W. Schwarzenbach, E. Bano, P. Godignon
Published in: 2024
Publisher: ICSCRM

Study on epi performance of engineered 150 mm and 200 mmSiC substrates in a multi-wafer batch reactor

Author(s): Philip Hens K.M. Albrecht Birgit Kallinger R. Karhu J. Erlekampf
Published in: 2024
Publisher: ICSCRM2024

Crystal originated defects monitoring and reduction in production grade SmartSiC engineered substrates

Author(s): E. Cela, K. Alassaad, A. Chapelle, S. Rouchier, W. Schwarzenbach, A. Drouin, V. Chagneux, M. Zielinski
Published in: 2023
Publisher: ICSCRM 2023

Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

Author(s): Jan Martiš, Pavel Vorel
Published in: 2023
Publisher: BUT

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering

Author(s): N. Piluso, C. Calabretta, E. Fontana, G. Maira, A. Russo, A. Severino, G. Arena, E. Guiot, A. Drouin, W. Schwarzenbach
Published in: 2024
Publisher: ICSCRM

SmartSiC 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability

Author(s): Eric Guiot
Published in: 2024
Publisher: ICSCRM

Engineered SiC materials for power technologies

Author(s): W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie,E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat , N. Daval, S. Odoul, P. Sandri and C. Maleville
Published in: 2022 International Conference on IC Design and Technology (ICICDT), Issue INSPEC Accession Number: 22214351, 2022, Page(s) 55 - 56
Publisher: IEEE
DOI: 10.1109/icicdt56182.2022

Improved power cycling reliability through the use of SmartSiC engineered substrate for power devices

Author(s): Eric Guiot, Frdric Allibert, Jrgen Leib, Tom Becker,Tobias Erlbacher
Published in: 2023
Publisher: PCIM 2023

Ansatz zur Kollaboration in Wertschöpfungsnetzwerk-zentrierten Innovationsprozessen Smarter Produkte

Author(s): MOLLAHASSANI, D., JURESA, Y., EICKHOFF, T., GÖBEL, J.C.
Published in: Proceedings Stuttgarter Symposium für Produktentwicklung, 2023
Publisher: SSPE2023

High sensitivity surface defect inspection of SiC and SmartSiCTM substrates using a DUV laser-based system

Author(s): Enrica Cela, Sam Shahidi , Prasant Parangi , Ramesh Shrestha, Gavin Simpson, Julie Widiez, Nicolas Daval, Audrey Chapelle, Séverin Rouchier, Walter Schwarzenbach
Published in: International Conference on Silicon Carbide and Related Materials 2022, Issue Defect and Diffusion Forum Vol. 425, 2022, Page(s) 320-324, ISBN 978-3-0364-0167-6
Publisher: Trans Tech Publications Ltd
DOI: 10.4028/p-4918s1

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

Author(s): Philip Hens, Kevin M. Albrecht, Birgit Kallinger, Robin Karhu, Jrgen Erlekampf
Published in: 2024
Publisher: ICSCRM

Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

Author(s): Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Tobias Erlbacher, Carsten Hellinger, Séverin Rouchier
Published in: Materials Science Forum, Issue 1092, 2022, Page(s) 201-207, ISSN 1662-9752
Publisher: Trans Tech Publications Ltd
DOI: 10.4028/p-777hqg

Benchmarking experiment of substrate quality including SmartSiC wafers by epitaxy in a batch reactor

Author(s): B. Kallinger, P. Hens, C. Kranert, K. M. Albrecht, J. Erlekampf
Published in: 2023
Publisher: DGKK

Influence of Transfer Molding on the Reliability of DCM SiC Pow-er Modules

Author(s): Jacek Rudzki, Henning Ströbel-Maier, Martin Becker, Patrick Heimler, Dong Xie, Mohamed Ala-luss, Thomas Basler, Anu Mathew, Sven Rzepka
Published in: 2024
Publisher: PCIM Europe

Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

Author(s): Marius Köhler, Michael Curkin, Christian Thomas, Nicolas Heuck, Jens Müller, Kurt-Georg Besendörfer
Published in: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, Page(s) 506-509
Publisher: IEEE
DOI: 10.1109/ispsd59661.2024.10579636

Design and Technology of Automotive Power Modules —An Introduction

Author(s): Stefan Oeling
Published in: 2023
Publisher: ISPSD

SiC engineered substrate: increasing SiC MOSFETs current density from device to module level

Author(s): Eric GUIOT
Published in: 2024
Publisher: APEC

Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices

Author(s): Eric Guiot, Gonzalo Picun, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Alexis Drouin, Jean-Marc Béthoux, Julie Widiez, Séverin Rouchier, Tobias Erlbacher
Published in: 2022
Publisher: VDE
DOI: 10.30420/565822081

Design of a Four-Limb Coupled Inductor for a Three-phase Six-Switched Boost PFC Converter for EV Application

Author(s): Kelly Ribeiro de Faria, Larbi Bendani, Nadjib Bouzidi
Published in: 2024
Publisher: PCIM Europe

Supporting Collaborative Innovation Processes in Smart Product Value

Author(s): Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Published in: Procedia CIRP, Issue Volume 109, 2022, Page(s) 349-355
Publisher: Elsevier
DOI: 10.1016/j.procir.2022.05.261

Increasing SiC Power Devices Current Density up to 30% Through 150 & 200mm Semiconductor Substrate Engineering

Author(s): E. Guiot, Frdric Allibert, Jrgen Leib, Tom Becker, Alexis Drouin, Walter Schwarzenbach
Published in: 2024
Publisher: APEC

Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions

Author(s): Dong Xie*, Patrick Heimler, Roman Boldyrjew-Mast, Mohamed Alaluss, Sven Thiele, Josef Lutz, Thomas Basler
Published in: 2024
Publisher: ESREF24

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application

Author(s): N. A. Mahadik, D. A. Scheiman, R. E. Stahlbush, A. Drouin, S. Rouchier, W.Schwarzenbach, M. Zielinski
Published in: 2024
Publisher: ICSCRM

150 mm SiC engineered substrates for high-voltage power devices

Author(s): Séverin Rouchier, et al
Published in: ICSCRM 2021, 2021
Publisher: Material Science Forum published by Trans Tech Publications Ltd, Switzerland for ECSCRM 2021
DOI: 10.4028/p-mxxdef

SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

Author(s): G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Published in: 2024
Publisher: ICSRM 2024

Wide Bandgap Material Transfer as a Flagship Technology for Future High Power Devices

Author(s): J. Widiez, G. Gelineau, C. Masante, J. Chrétien, A. Moulin, V. Prudkovskiy, N. Troutot, E. Rolland, P. Gergaud, D. Mariolle, S. Barbet, L. Corbin, V. Amalbert, P. Gilles, F. Milesi, F. Mazen, L. Le Van-Jodin
Published in: 2023
Publisher: MRS FALL 2023

Wide band-gap material transfer using Smart CutTM technology for power electronics

Author(s): J. Widiez
Published in: 2024
Publisher: VLSI-TSA

Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base – A game changer in SiC power device performance and reliability

Author(s): G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Published in: 2024
Publisher: Bodo's Power

Bosch Semiconductors, large size 1200V MOSFETs prepared on SmartSiC were presented on the booth during PCIM 2024

Author(s): E. Guiot, Metin Koyuncu
Published in: 2024
Publisher: PCIM

Investigation of Stability and Oscillations at Power Modules with Low Stray Inductance

Author(s): S. Buetow, M. Spang
Published in: 2022
Publisher: ISPSD (International Symposium on Power Semiconductor Devices and ICs)

Supporting Collaborative Innovation Processes in Smart Product ValueCreation Networks

Author(s): Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Published in: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks, 2022, Page(s) 5
Publisher: CIRP DESIGN 2022

SmartSiCTM for Manufacturing of SiC Power Devices

Author(s): Nicolas Daval et al
Published in: EDTM 2022, 2022
Publisher: EDTM 2022

ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

Author(s): Arnulf Sehlinger, Dominik Plein, Hendrik Plooij, Sebastian Spring
Published in: 2024
Publisher: NAFEMS

Digital twin-based lifetime estimation of SiC power modules

Author(s): Anu Mathew; Sven Rzepka; Mohamed Alaluss; Patrick Heimler; Dong Xie; Thomas Basler
Published in: 2024
Publisher: ISPSD

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Author(s): C. Masante, J. M. Bethoux, G. Gelineau, E. Rolland, S. Barbet, A. Moulin, L. Turchetti, O. Ledoux, W. Schwarzenbach, S. Rouchier, M. Delcroix, N. Troutot, S. Huet, V. Prudkovskiy, K. Mony, J. Biscarrat, J. Widiez
Published in: 2023
Publisher: ICSCRM 2023

The mobility scenario vs Green Deal Objectives

Author(s): A.Imbruglia, F.Gennaro, P.Di Grazia
Published in: Smart System Integration 2022, 2022, Page(s) 5
Publisher: SSI2022

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

Author(s): V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Published in: 2024
Publisher: ICSCRM

A greener SiC wafer with Smart Cut technology

Author(s): OLIVIER BONNIN, ERIC GUIOT, WALTER SCHWARZENBACHM AND GONZALO PICUN
Published in: Compound Semiconductor, 2021
Publisher: Compound Semiconductor

Focus Topic: Wide Bandgap Semiconductors

Author(s): Filippo Di Giovanni
Published in: Oral presentation / Electronica 2022, 2022
Publisher: Electronica 2022

Dynamic Flux Balance Control of a Phase-shifted Full Bridge

Author(s): Jan Martiš, Pavel Vorel, Radek Tománek
Published in: 2023 International Conference on Electrical Drives and Power Electronics (EDPE), 2023, Page(s) 1-5
Publisher: IEEE
DOI: 10.1109/edpe58625.2023.10274035

Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

Author(s): R. Bakri, X. Margueron, W. da Cunha Alves, X. Cimetiere, F. Gillon, A. Bruyere, L. Vatamanu
Published in: 2022
Publisher: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Author(s): Damun Mollahassani, Thomas Eickhoff, Andreas Eiden, Jens C. Göbel
Published in: Tag des Systems Engineering 2022 - Tagungsband Paderborn, Issue Band 20, 2022, ISBN 9783981880533
Publisher: Gesellschaft für Systems Engineering e.V.

Comparison of Two Bidirectional 11KW 400V CLLC and CLLLC Resonant Converters for EV Applications

Author(s): Hasan Mousavi Somarin, Norbert Messi, Farshid Sarrafin Ardebili, Luiz Braz
Published in: 2024
Publisher: PCIM Europe

Poly-SiC characterization and properties for SmartSiC

Author(s): H. Biard, A. Drouin, W. Schwarzenbach, K. Alassaad, L. Coeurdray, V. Chagneux, M. Coche, S. Monnoye, H. Mank, S. Rouchier, T. Barge, D. Radisson, A. Moulin, S. Barbet, J. Widiez, S. Odoul, C. Maleville
Published in: 2023
Publisher: ICSCRM

Proven Power Cycling Reliability of SmartSiCTM Substrate for power device

Author(s): E. Guiot,Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Carsten Hellinger, Tobias Erlbacher, Séverin Rouchier
Published in: PCIM 2022, 2022
Publisher: Mesago for PCIM 2022

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Author(s): MOLLAHASSANI, D., EICKHOFF, T., EIDEN, A., GÖBEL, J.C.
Published in: 2023, ISBN 9783981880588
Publisher: TdSE

technologyBetterGreenerFasterSmartSiC™ 150 & 200mm engineered substrate:increasing SiC power device current density up to 30%

Author(s): Gonzalo Picun, Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin1,Walter Schwarzenbach
Published in: 2024
Publisher: PCIM Europe

Application of advanced characterization techniques to SmartSiC product for substrate-level device performance optimization

Author(s): A. Drouin, R. Simon, W. Schwarzenbach, M. Zielenski, D. Radisson, E. Guiot, E. Cela, A. Chapelle, H. Biard
Published in: 2023
Publisher: ICSCRM 2023

SmartSiCTM : Boosting SiC performance for high-voltage power applications

Author(s): Walter Schwarzenbach, Severin Rouchier, G. Berre, R. Boulet, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Mank, C. Moisson, H. Biard, M. Lagrange, A. Quintero Colmenares, L. Kabelaan, L. Viravaux, N. Ben Mohamed, D. Radisson, E. Guiot, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, E. Rolland, G. Gélineau, K. Vladimirova, N. Troutot, A. Moulin, V. Prudkovski, S. Barbet, D. Delprat, N. Da
Published in: Industrial Session / ICSCRM 2022, 2022
Publisher: ICSCRM 2022

Evaluation of crystal quality and dopant activation ofSmart Cut™ transferred 4H SiC thin film

Author(s): G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Published in: Scientific Poster / ICSCRM22, 2022
Publisher: ICSCRM22

Radiation Hardness of SiCTrenchMOSFETDevices

Author(s): Stephan Schwaiger, Jan, Alsmeier, Hadiuzzaman Syed, Alberto Martinez-Limia, Klaus Heyers
Published in: 2023
Publisher: Semicon Europa 2023

Game Changers in SiC Power Device Performance and Reliability

Author(s): Picun G*, Zumbo L+, Bellocchi G+, Guiot E*, Guarnera A+, Rascunà S+, Imbruglia A+, Arena G+,
Published in: 2024
Publisher: Bodo's Power

Centrotherm High Temperature Annealing and Oxidation Furnaces

Author(s): P. Schmid
Published in: 2023
Publisher: ICSCRM

Empowering electric vehicles with superior SiC SmartSiC substrates hold the key to ramping volumes of better SiC devices for automotive and industrial applications

Author(s): EMMANUEL SABONNADIRE, CHRISTOPHE MALEVILLE AND CYRIL MENON
Published in: Compound Semiconductor Magazine, 2023
Publisher: Compound Semiconductor Magazine

Advancements in Non-contact High-resolution Resistivity Imaging of Wide Bandgap Materials

Author(s): M. Klein, S.Vinodh, B.Chen
Published in: Industry session / ICSCRM22, 2022
Publisher: ICSCRM22

TRANSFORM: Trusted European SiC Value Chain for a greener Economy

Author(s): M. Koyuncu
Published in: 2024
Publisher: Semicon Europa 2024

Role of interface/border traps on the threshold voltage instability of SiC power transistors

Author(s): V. Volosov, S. Cascino, M. Saggio, A. Imbruglia, F. Di Giovanni, C. Fiegna, E. Sangiorgi, A.N. Tallarico
Published in: Solid-State Electronics, Issue 207, 2023, Page(s) 108699, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108699

Knowledge Collaboration Approach in Smart Product Innovation Networks

Author(s): Damun Mollahassani, Thomas Eickhoff, Yannick Juresa, Jens C. Göbel
Published in: Procedia CIRP, Issue 119, 2024, Page(s) 662-668, ISSN 2212-8271
Publisher: CIRP Design
DOI: 10.1016/j.procir.2023.02.158

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Author(s): Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico
Published in: Micromachines, Issue 15, 2024, Page(s) 872, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15070872

Comparative study of methods for counting of dislocations in 4H-SiC

Author(s): Christian Kranert, Paul Wimmer, Alexis Drouin, Christian Reimann, Jochen Friedrich
Published in: Materials Science in Semiconductor Processing, Issue 170, 2023, Page(s) 107948, ISSN 1369-8001
Publisher: Pergamon Press
DOI: 10.1016/j.mssp.2023.107948

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