Trusted European SiC Value Chain for a greener Economy

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC

Autorzy: V.S Prudkovskiy, R. Templier, A. Moulin, N. Troutot, G. Gelineau, S. Huet, V H. Le, K. Mony, G. Lapertot, M. Delcroix, S. Caridroit, S. Barbet, J. Widiez
Opublikowane w: 2023
Wydawca: ICSCRM 2023

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

Autorzy: Malle Le Cunff, Franois Rieutord, Didier Landru, Oleg Kononchuk and Nikolay Cherkashin
Opublikowane w: 2024
Wydawca: ICSCRM

Adaptive Resonant Controller for a Three-Phase PFC Converter for an On-Board Charge Application

Autorzy: Rami Troudi, Kelly Ribeiro de Faria, Moctar Coulibaly
Opublikowane w: 2024
Wydawca: PCIM Europe

Processing and electrical characterization of SiC-on-Insulator structures

Autorzy: Guillaume GELINEAU, Cédric MASANTE, Emmanuel Rolland, Sophie BARBET, Lucie CORBIN, Anne-Marie PAPON, Simon CARIDROIT, Mathieu DELCROIX, Stéphanie HUET, Alexandre MOULIN, Vladimir PRUDKOVSKIY, Nicolas TROUTOT, Séverin ROUCHIER, Loïc TURCHETTI, Karine MONY, Julie WIDIEZ
Opublikowane w: 2023
Wydawca: ICSCRM 2023

New Die Attach Materials: Silver and Silver/ Copper sintering pastes

Autorzy: B. Rábay, A. Stelzer
Opublikowane w: 2022
Wydawca: PCIM Europe Conference 2022

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing

Autorzy: E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast , S. Shahidi , G. Simpson
Opublikowane w: 2024
Wydawca: ICSCRM

Smart CutTM SiC: enabling a larger adoption of SiC substrate for power devices

Autorzy: E. Guiot et al
Opublikowane w: APEC 2022, 2022
Wydawca: IEEE

Gate Oxide Performance and Reliability on SmartSiC Wafers and the Influence of RTA processing on Gate Oxide Lifetime

Autorzy: T. Becker, M. Rommel, H. Schlichting, E. Guiot and F. Allibert
Opublikowane w: 2024
Wydawca: ICSCRM

Benchmarking experiment of substrate quality including SmartSiCTM wafers by epitaxy in a batch reactor

Autorzy: B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
Opublikowane w: Solid State Phenomena,, Numer Volume 342, 2022, Strona(/y) 91-98, ISSN 1662-9779
Wydawca: Trans Tech Publications Ltd
DOI: 10.4028/v-868lqn

Efficiency, Volume and CO2 Emissions Comparison in a PFC Converter with an Active Filter Solution for OBC Application

Autorzy: Kelly Ribeiro de Faria, Jean-Raphael Capounda, Vineel Rajagopal, Pascal Menegazzi, Benjamin Paul, Nabil Kamil, Soleiman Galeshi, Norbert Messi
Opublikowane w: 2024
Wydawca: PCIM Europe

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates

Autorzy: G. Bellocchi, S. Rascuna`, P. Mancuso, G. Arena, M. Saggio G. Picun, E. Guiot, W. Schwarzenbach
Opublikowane w: 2024
Wydawca: ICSCRM

Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

Autorzy: Dr. Bernd Dielacher (presenter), Péter Kerepesi
Opublikowane w: 2024
Wydawca: PE International 2024 conference

Analysis of SysML-based Product Development Collaborations in Cross-Company Value Creation Network

Autorzy: MOLLAHASSANI, D., BOSSE. R., GÖBEL, J.C.
Opublikowane w: prostep ivip SYMPOSIUM, 2023
Wydawca: prostep ivip

Comparison of High Frequency Three Phase Transformer Technologiesfor High Power Density On Board Chargers

Autorzy: Wendell da Cunha Alves, Norbert Messi
Opublikowane w: 2023
Wydawca: PCIM Europe

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autorzy: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Opublikowane w: Materials Science Forum, Numer 1089(2), 2022, Strona(/y) 71-79, ISSN 1662-9752
Wydawca: Trans Tech Publications Ltd
DOI: 10.4028/p-026sj4

Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

Autorzy: Dominik Sumkötter, Mario Wollschläger, Marius Köhler, Marcel Lawniczak, Johannes Weickmann, Kurt-Georg Besendörfer, Nicolas Heuck
Opublikowane w: 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC), 2024, Strona(/y) 596-602
Wydawca: IEEE
DOI: 10.1109/eptc59621.2023.10457720

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autorzy: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Opublikowane w: 2023
Wydawca: EPE

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autorzy: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Opublikowane w: EPE 2023, 2023
Wydawca: EPE 2023

SmartSiC 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Autorzy: Eric Guiot , Frdric Allibert, Jrgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin, Walter Schwarzenbach
Opublikowane w: 2024
Wydawca: PCIM

Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

Autorzy: Michael Curkin, Marius Köhler, Silke Kraft, Jens Mueller, Kurt-Georg Besendoerfer, Nicolas Heuck
Opublikowane w: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, Strona(/y) 1682-1688
Wydawca: IEEE
DOI: 10.1109/ectc51909.2023.00286

Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

Autorzy: H. Biard, W. Schwarzenbach, S. Odoul, I. Radu,A. Potier, M. Ferrato, E. Guajioty
Opublikowane w: Diffusion and Defect Data Pt.B: Solid State Phenomena, Numer 344(12), 2022, Strona(/y) 47-52, ISSN 1662-9779
Wydawca: Trans Tech Publications Ltd
DOI: 10.4028/p-65127n

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autorzy: G. GELINEAU, J. WIDIEZ, E. ROLLAND, K. VLADIMIROVA, A. MOULIN, V. PRUDKOVSKIY, N. TROUTOT, P. GERGAUD, D. MARIOLLE, S. BARBET, V. AMALBERT, G. LAPERTOT, K. MONY, S. ROUCHIER, R. BOULET, G. BERRE, W .SCHWARZENBACH, Y. BOGUMILOWICZ
Opublikowane w: 2022
Wydawca: ICSCRM

Automotive Charger Grid-Forming Control Opportunities for G2V and V2X Applications

Autorzy: Elie Fayad, Damian Sal y Rosas, Antoine Bruyere, Fredy Poirier
Opublikowane w: 2023 IEEE Vehicle Power and Propulsion Conference (VPPC), 2024, Strona(/y) 1-6
Wydawca: IEEE
DOI: 10.1109/vppc60535.2023.10403262

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

Autorzy: M. Alaluss, C. Böhm, P. Heimler, T. Basler, A. Elsayed, K. Oberdieck, S. Goel
Opublikowane w: 2024
Wydawca: ICSCRM

SmartSiC : a greener, faster and better technology for SiC

Autorzy: Olivier BONNIN
Opublikowane w: 2023
Wydawca: ICSCRM 2023

SmartSiC substrate : increasing SiC MOSFETs current density from device to module level

Autorzy: E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach; T. Erlbacher
Opublikowane w: 2023
Wydawca: ICSCRM

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Autorzy: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Opublikowane w: 2024
Wydawca: ICSCRM

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

Autorzy: A. Abbas, C. Le Royer, R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez, S. Gningue, S. Rouchier, F. Allibert, W. Schwarzenbach, E. Bano, P. Godignon
Opublikowane w: 2024
Wydawca: ICSCRM

Study on epi performance of engineered 150 mm and 200 mmSiC substrates in a multi-wafer batch reactor

Autorzy: Philip Hens K.M. Albrecht Birgit Kallinger R. Karhu J. Erlekampf
Opublikowane w: 2024
Wydawca: ICSCRM2024

Crystal originated defects monitoring and reduction in production grade SmartSiC engineered substrates

Autorzy: E. Cela, K. Alassaad, A. Chapelle, S. Rouchier, W. Schwarzenbach, A. Drouin, V. Chagneux, M. Zielinski
Opublikowane w: 2023
Wydawca: ICSCRM 2023

Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

Autorzy: Jan Martiš, Pavel Vorel
Opublikowane w: 2023
Wydawca: BUT

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering

Autorzy: N. Piluso, C. Calabretta, E. Fontana, G. Maira, A. Russo, A. Severino, G. Arena, E. Guiot, A. Drouin, W. Schwarzenbach
Opublikowane w: 2024
Wydawca: ICSCRM

SmartSiC 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability

Autorzy: Eric Guiot
Opublikowane w: 2024
Wydawca: ICSCRM

Engineered SiC materials for power technologies

Autorzy: W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie,E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat , N. Daval, S. Odoul, P. Sandri and C. Maleville
Opublikowane w: 2022 International Conference on IC Design and Technology (ICICDT), Numer INSPEC Accession Number: 22214351, 2022, Strona(/y) 55 - 56
Wydawca: IEEE
DOI: 10.1109/icicdt56182.2022

Improved power cycling reliability through the use of SmartSiC engineered substrate for power devices

Autorzy: Eric Guiot, Frdric Allibert, Jrgen Leib, Tom Becker,Tobias Erlbacher
Opublikowane w: 2023
Wydawca: PCIM 2023

Ansatz zur Kollaboration in Wertschöpfungsnetzwerk-zentrierten Innovationsprozessen Smarter Produkte

Autorzy: MOLLAHASSANI, D., JURESA, Y., EICKHOFF, T., GÖBEL, J.C.
Opublikowane w: Proceedings Stuttgarter Symposium für Produktentwicklung, 2023
Wydawca: SSPE2023

High sensitivity surface defect inspection of SiC and SmartSiCTM substrates using a DUV laser-based system

Autorzy: Enrica Cela, Sam Shahidi , Prasant Parangi , Ramesh Shrestha, Gavin Simpson, Julie Widiez, Nicolas Daval, Audrey Chapelle, Séverin Rouchier, Walter Schwarzenbach
Opublikowane w: International Conference on Silicon Carbide and Related Materials 2022, Numer Defect and Diffusion Forum Vol. 425, 2022, Strona(/y) 320-324, ISBN 978-3-0364-0167-6
Wydawca: Trans Tech Publications Ltd
DOI: 10.4028/p-4918s1

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

Autorzy: Philip Hens, Kevin M. Albrecht, Birgit Kallinger, Robin Karhu, Jrgen Erlekampf
Opublikowane w: 2024
Wydawca: ICSCRM

Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

Autorzy: Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Tobias Erlbacher, Carsten Hellinger, Séverin Rouchier
Opublikowane w: Materials Science Forum, Numer 1092, 2022, Strona(/y) 201-207, ISSN 1662-9752
Wydawca: Trans Tech Publications Ltd
DOI: 10.4028/p-777hqg

Benchmarking experiment of substrate quality including SmartSiC wafers by epitaxy in a batch reactor

Autorzy: B. Kallinger, P. Hens, C. Kranert, K. M. Albrecht, J. Erlekampf
Opublikowane w: 2023
Wydawca: DGKK

Influence of Transfer Molding on the Reliability of DCM SiC Pow-er Modules

Autorzy: Jacek Rudzki, Henning Ströbel-Maier, Martin Becker, Patrick Heimler, Dong Xie, Mohamed Ala-luss, Thomas Basler, Anu Mathew, Sven Rzepka
Opublikowane w: 2024
Wydawca: PCIM Europe

Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

Autorzy: Marius Köhler, Michael Curkin, Christian Thomas, Nicolas Heuck, Jens Müller, Kurt-Georg Besendörfer
Opublikowane w: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, Strona(/y) 506-509
Wydawca: IEEE
DOI: 10.1109/ispsd59661.2024.10579636

Design and Technology of Automotive Power Modules —An Introduction

Autorzy: Stefan Oeling
Opublikowane w: 2023
Wydawca: ISPSD

SiC engineered substrate: increasing SiC MOSFETs current density from device to module level

Autorzy: Eric GUIOT
Opublikowane w: 2024
Wydawca: APEC

Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices

Autorzy: Eric Guiot, Gonzalo Picun, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Alexis Drouin, Jean-Marc Béthoux, Julie Widiez, Séverin Rouchier, Tobias Erlbacher
Opublikowane w: PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2022
Wydawca: VDE
DOI: 10.30420/565822081

Design of a Four-Limb Coupled Inductor for a Three-phase Six-Switched Boost PFC Converter for EV Application

Autorzy: Kelly Ribeiro de Faria, Larbi Bendani, Nadjib Bouzidi
Opublikowane w: 2024
Wydawca: PCIM Europe

Supporting Collaborative Innovation Processes in Smart Product Value

Autorzy: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Opublikowane w: Procedia CIRP, Numer Volume 109, 2022, Strona(/y) 349-355
Wydawca: Elsevier
DOI: 10.1016/j.procir.2022.05.261

Increasing SiC Power Devices Current Density up to 30% Through 150 & 200mm Semiconductor Substrate Engineering

Autorzy: E. Guiot, Frdric Allibert, Jrgen Leib, Tom Becker, Alexis Drouin, Walter Schwarzenbach
Opublikowane w: 2024
Wydawca: APEC

Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions

Autorzy: Dong Xie*, Patrick Heimler, Roman Boldyrjew-Mast, Mohamed Alaluss, Sven Thiele, Josef Lutz, Thomas Basler
Opublikowane w: 2024
Wydawca: ESREF24

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application

Autorzy: N. A. Mahadik, D. A. Scheiman, R. E. Stahlbush, A. Drouin, S. Rouchier, W.Schwarzenbach, M. Zielinski
Opublikowane w: 2024
Wydawca: ICSCRM

150 mm SiC engineered substrates for high-voltage power devices

Autorzy: Séverin Rouchier, et al
Opublikowane w: ICSCRM 2021, 2021
Wydawca: Material Science Forum published by Trans Tech Publications Ltd, Switzerland for ECSCRM 2021
DOI: 10.4028/p-mxxdef

SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

Autorzy: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Opublikowane w: 2024
Wydawca: ICSRM 2024

Wide Bandgap Material Transfer as a Flagship Technology for Future High Power Devices

Autorzy: J. Widiez, G. Gelineau, C. Masante, J. Chrétien, A. Moulin, V. Prudkovskiy, N. Troutot, E. Rolland, P. Gergaud, D. Mariolle, S. Barbet, L. Corbin, V. Amalbert, P. Gilles, F. Milesi, F. Mazen, L. Le Van-Jodin
Opublikowane w: 2023
Wydawca: MRS FALL 2023

Wide band-gap material transfer using Smart CutTM technology for power electronics

Autorzy: J. Widiez
Opublikowane w: 2024
Wydawca: VLSI-TSA

Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base – A game changer in SiC power device performance and reliability

Autorzy: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Opublikowane w: 2024
Wydawca: Bodo's Power

Bosch Semiconductors, large size 1200V MOSFETs prepared on SmartSiC were presented on the booth during PCIM 2024

Autorzy: E. Guiot, Metin Koyuncu
Opublikowane w: 2024
Wydawca: PCIM

Investigation of Stability and Oscillations at Power Modules with Low Stray Inductance

Autorzy: S. Buetow, M. Spang
Opublikowane w: 2022
Wydawca: ISPSD (International Symposium on Power Semiconductor Devices and ICs)

Supporting Collaborative Innovation Processes in Smart Product ValueCreation Networks

Autorzy: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Opublikowane w: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks, 2022, Strona(/y) 5
Wydawca: CIRP DESIGN 2022

SmartSiCTM for Manufacturing of SiC Power Devices

Autorzy: Nicolas Daval et al
Opublikowane w: EDTM 2022, 2022
Wydawca: EDTM 2022

ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

Autorzy: Arnulf Sehlinger, Dominik Plein, Hendrik Plooij, Sebastian Spring
Opublikowane w: 2024
Wydawca: NAFEMS

Digital twin-based lifetime estimation of SiC power modules

Autorzy: Anu Mathew; Sven Rzepka; Mohamed Alaluss; Patrick Heimler; Dong Xie; Thomas Basler
Opublikowane w: 2024
Wydawca: ISPSD

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Autorzy: C. Masante, J. M. Bethoux, G. Gelineau, E. Rolland, S. Barbet, A. Moulin, L. Turchetti, O. Ledoux, W. Schwarzenbach, S. Rouchier, M. Delcroix, N. Troutot, S. Huet, V. Prudkovskiy, K. Mony, J. Biscarrat, J. Widiez
Opublikowane w: 2023
Wydawca: ICSCRM 2023

The mobility scenario vs Green Deal Objectives

Autorzy: A.Imbruglia, F.Gennaro, P.Di Grazia
Opublikowane w: Smart System Integration 2022, 2022, Strona(/y) 5
Wydawca: SSI2022

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

Autorzy: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Opublikowane w: 2024
Wydawca: ICSCRM

A greener SiC wafer with Smart Cut technology

Autorzy: OLIVIER BONNIN, ERIC GUIOT, WALTER SCHWARZENBACHM AND GONZALO PICUN
Opublikowane w: Compound Semiconductor, 2021
Wydawca: Compound Semiconductor

Focus Topic: Wide Bandgap Semiconductors

Autorzy: Filippo Di Giovanni
Opublikowane w: Oral presentation / Electronica 2022, 2022
Wydawca: Electronica 2022

Dynamic Flux Balance Control of a Phase-shifted Full Bridge

Autorzy: Jan Martiš, Pavel Vorel, Radek Tománek
Opublikowane w: 2023 International Conference on Electrical Drives and Power Electronics (EDPE), 2023, Strona(/y) 1-5
Wydawca: IEEE
DOI: 10.1109/edpe58625.2023.10274035

Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

Autorzy: R. Bakri, X. Margueron, W. da Cunha Alves, X. Cimetiere, F. Gillon, A. Bruyere, L. Vatamanu
Opublikowane w: 2022
Wydawca: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autorzy: Damun Mollahassani, Thomas Eickhoff, Andreas Eiden, Jens C. Göbel
Opublikowane w: Tag des Systems Engineering 2022 - Tagungsband Paderborn, Numer Band 20, 2022, ISBN 9783981880533
Wydawca: Gesellschaft für Systems Engineering e.V.

Comparison of Two Bidirectional 11KW 400V CLLC and CLLLC Resonant Converters for EV Applications

Autorzy: Hasan Mousavi Somarin, Norbert Messi, Farshid Sarrafin Ardebili, Luiz Braz
Opublikowane w: 2024
Wydawca: PCIM Europe

Poly-SiC characterization and properties for SmartSiC

Autorzy: H. Biard, A. Drouin, W. Schwarzenbach, K. Alassaad, L. Coeurdray, V. Chagneux, M. Coche, S. Monnoye, H. Mank, S. Rouchier, T. Barge, D. Radisson, A. Moulin, S. Barbet, J. Widiez, S. Odoul, C. Maleville
Opublikowane w: 2023
Wydawca: ICSCRM

Proven Power Cycling Reliability of SmartSiCTM Substrate for power device

Autorzy: E. Guiot,Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Carsten Hellinger, Tobias Erlbacher, Séverin Rouchier
Opublikowane w: PCIM 2022, 2022
Wydawca: Mesago for PCIM 2022

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autorzy: MOLLAHASSANI, D., EICKHOFF, T., EIDEN, A., GÖBEL, J.C.
Opublikowane w: 2023, ISBN 9783981880588
Wydawca: TdSE

technologyBetterGreenerFasterSmartSiC™ 150 & 200mm engineered substrate:increasing SiC power device current density up to 30%

Autorzy: Gonzalo Picun, Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin1,Walter Schwarzenbach
Opublikowane w: 2024
Wydawca: PCIM Europe

Application of advanced characterization techniques to SmartSiC product for substrate-level device performance optimization

Autorzy: A. Drouin, R. Simon, W. Schwarzenbach, M. Zielenski, D. Radisson, E. Guiot, E. Cela, A. Chapelle, H. Biard
Opublikowane w: 2023
Wydawca: ICSCRM 2023

SmartSiCTM : Boosting SiC performance for high-voltage power applications

Autorzy: Walter Schwarzenbach, Severin Rouchier, G. Berre, R. Boulet, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Mank, C. Moisson, H. Biard, M. Lagrange, A. Quintero Colmenares, L. Kabelaan, L. Viravaux, N. Ben Mohamed, D. Radisson, E. Guiot, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, E. Rolland, G. Gélineau, K. Vladimirova, N. Troutot, A. Moulin, V. Prudkovski, S. Barbet, D. Delprat, N. Da
Opublikowane w: Industrial Session / ICSCRM 2022, 2022
Wydawca: ICSCRM 2022

Evaluation of crystal quality and dopant activation ofSmart Cut™ transferred 4H SiC thin film

Autorzy: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Opublikowane w: Scientific Poster / ICSCRM22, 2022
Wydawca: ICSCRM22

Radiation Hardness of SiCTrenchMOSFETDevices

Autorzy: Stephan Schwaiger, Jan, Alsmeier, Hadiuzzaman Syed, Alberto Martinez-Limia, Klaus Heyers
Opublikowane w: 2023
Wydawca: Semicon Europa 2023

Game Changers in SiC Power Device Performance and Reliability

Autorzy: Picun G*, Zumbo L+, Bellocchi G+, Guiot E*, Guarnera A+, Rascunà S+, Imbruglia A+, Arena G+,
Opublikowane w: 2024
Wydawca: Bodo's Power

Centrotherm High Temperature Annealing and Oxidation Furnaces

Autorzy: P. Schmid
Opublikowane w: 2023
Wydawca: ICSCRM

Empowering electric vehicles with superior SiC SmartSiC substrates hold the key to ramping volumes of better SiC devices for automotive and industrial applications

Autorzy: EMMANUEL SABONNADIRE, CHRISTOPHE MALEVILLE AND CYRIL MENON
Opublikowane w: Compound Semiconductor Magazine, 2023
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