Trusted European SiC Value Chain for a greener Economy

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC

Autori: V.S Prudkovskiy, R. Templier, A. Moulin, N. Troutot, G. Gelineau, S. Huet, V H. Le, K. Mony, G. Lapertot, M. Delcroix, S. Caridroit, S. Barbet, J. Widiez
Pubblicato in: 2023
Editore: ICSCRM 2023

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

Autori: Malle Le Cunff, Franois Rieutord, Didier Landru, Oleg Kononchuk and Nikolay Cherkashin
Pubblicato in: 2024
Editore: ICSCRM

Adaptive Resonant Controller for a Three-Phase PFC Converter for an On-Board Charge Application

Autori: Rami Troudi, Kelly Ribeiro de Faria, Moctar Coulibaly
Pubblicato in: 2024
Editore: PCIM Europe

Processing and electrical characterization of SiC-on-Insulator structures

Autori: Guillaume GELINEAU, Cédric MASANTE, Emmanuel Rolland, Sophie BARBET, Lucie CORBIN, Anne-Marie PAPON, Simon CARIDROIT, Mathieu DELCROIX, Stéphanie HUET, Alexandre MOULIN, Vladimir PRUDKOVSKIY, Nicolas TROUTOT, Séverin ROUCHIER, Loïc TURCHETTI, Karine MONY, Julie WIDIEZ
Pubblicato in: 2023
Editore: ICSCRM 2023

New Die Attach Materials: Silver and Silver/ Copper sintering pastes

Autori: B. Rábay, A. Stelzer
Pubblicato in: 2022
Editore: PCIM Europe Conference 2022

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing

Autori: E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast , S. Shahidi , G. Simpson
Pubblicato in: 2024
Editore: ICSCRM

Smart CutTM SiC: enabling a larger adoption of SiC substrate for power devices

Autori: E. Guiot et al
Pubblicato in: APEC 2022, 2022
Editore: IEEE

Gate Oxide Performance and Reliability on SmartSiC Wafers and the Influence of RTA processing on Gate Oxide Lifetime

Autori: T. Becker, M. Rommel, H. Schlichting, E. Guiot and F. Allibert
Pubblicato in: 2024
Editore: ICSCRM

Benchmarking experiment of substrate quality including SmartSiCTM wafers by epitaxy in a batch reactor

Autori: B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
Pubblicato in: Solid State Phenomena,, Numero Volume 342, 2022, Pagina/e 91-98, ISSN 1662-9779
Editore: Trans Tech Publications Ltd
DOI: 10.4028/v-868lqn

Efficiency, Volume and CO2 Emissions Comparison in a PFC Converter with an Active Filter Solution for OBC Application

Autori: Kelly Ribeiro de Faria, Jean-Raphael Capounda, Vineel Rajagopal, Pascal Menegazzi, Benjamin Paul, Nabil Kamil, Soleiman Galeshi, Norbert Messi
Pubblicato in: 2024
Editore: PCIM Europe

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates

Autori: G. Bellocchi, S. Rascuna`, P. Mancuso, G. Arena, M. Saggio G. Picun, E. Guiot, W. Schwarzenbach
Pubblicato in: 2024
Editore: ICSCRM

Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

Autori: Dr. Bernd Dielacher (presenter), Péter Kerepesi
Pubblicato in: 2024
Editore: PE International 2024 conference

Analysis of SysML-based Product Development Collaborations in Cross-Company Value Creation Network

Autori: MOLLAHASSANI, D., BOSSE. R., GÖBEL, J.C.
Pubblicato in: prostep ivip SYMPOSIUM, 2023
Editore: prostep ivip

Comparison of High Frequency Three Phase Transformer Technologiesfor High Power Density On Board Chargers

Autori: Wendell da Cunha Alves, Norbert Messi
Pubblicato in: 2023
Editore: PCIM Europe

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autori: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Pubblicato in: Materials Science Forum, Numero 1089(2), 2022, Pagina/e 71-79, ISSN 1662-9752
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-026sj4

Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

Autori: Dominik Sumkötter, Mario Wollschläger, Marius Köhler, Marcel Lawniczak, Johannes Weickmann, Kurt-Georg Besendörfer, Nicolas Heuck
Pubblicato in: 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC), 2024, Pagina/e 596-602
Editore: IEEE
DOI: 10.1109/eptc59621.2023.10457720

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autori: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Pubblicato in: 2023
Editore: EPE

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autori: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Pubblicato in: EPE 2023, 2023
Editore: EPE 2023

SmartSiC 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Autori: Eric Guiot , Frdric Allibert, Jrgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin, Walter Schwarzenbach
Pubblicato in: 2024
Editore: PCIM

Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

Autori: Michael Curkin, Marius Köhler, Silke Kraft, Jens Mueller, Kurt-Georg Besendoerfer, Nicolas Heuck
Pubblicato in: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, Pagina/e 1682-1688
Editore: IEEE
DOI: 10.1109/ectc51909.2023.00286

Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

Autori: H. Biard, W. Schwarzenbach, S. Odoul, I. Radu,A. Potier, M. Ferrato, E. Guajioty
Pubblicato in: Diffusion and Defect Data Pt.B: Solid State Phenomena, Numero 344(12), 2022, Pagina/e 47-52, ISSN 1662-9779
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-65127n

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autori: G. GELINEAU, J. WIDIEZ, E. ROLLAND, K. VLADIMIROVA, A. MOULIN, V. PRUDKOVSKIY, N. TROUTOT, P. GERGAUD, D. MARIOLLE, S. BARBET, V. AMALBERT, G. LAPERTOT, K. MONY, S. ROUCHIER, R. BOULET, G. BERRE, W .SCHWARZENBACH, Y. BOGUMILOWICZ
Pubblicato in: 2022
Editore: ICSCRM

Automotive Charger Grid-Forming Control Opportunities for G2V and V2X Applications

Autori: Elie Fayad, Damian Sal y Rosas, Antoine Bruyere, Fredy Poirier
Pubblicato in: 2023 IEEE Vehicle Power and Propulsion Conference (VPPC), 2024, Pagina/e 1-6
Editore: IEEE
DOI: 10.1109/vppc60535.2023.10403262

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

Autori: M. Alaluss, C. Böhm, P. Heimler, T. Basler, A. Elsayed, K. Oberdieck, S. Goel
Pubblicato in: 2024
Editore: ICSCRM

SmartSiC : a greener, faster and better technology for SiC

Autori: Olivier BONNIN
Pubblicato in: 2023
Editore: ICSCRM 2023

SmartSiC substrate : increasing SiC MOSFETs current density from device to module level

Autori: E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach; T. Erlbacher
Pubblicato in: 2023
Editore: ICSCRM

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Autori: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Pubblicato in: 2024
Editore: ICSCRM

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

Autori: A. Abbas, C. Le Royer, R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez, S. Gningue, S. Rouchier, F. Allibert, W. Schwarzenbach, E. Bano, P. Godignon
Pubblicato in: 2024
Editore: ICSCRM

Study on epi performance of engineered 150 mm and 200 mmSiC substrates in a multi-wafer batch reactor

Autori: Philip Hens K.M. Albrecht Birgit Kallinger R. Karhu J. Erlekampf
Pubblicato in: 2024
Editore: ICSCRM2024

Crystal originated defects monitoring and reduction in production grade SmartSiC engineered substrates

Autori: E. Cela, K. Alassaad, A. Chapelle, S. Rouchier, W. Schwarzenbach, A. Drouin, V. Chagneux, M. Zielinski
Pubblicato in: 2023
Editore: ICSCRM 2023

Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

Autori: Jan Martiš, Pavel Vorel
Pubblicato in: 2023
Editore: BUT

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering

Autori: N. Piluso, C. Calabretta, E. Fontana, G. Maira, A. Russo, A. Severino, G. Arena, E. Guiot, A. Drouin, W. Schwarzenbach
Pubblicato in: 2024
Editore: ICSCRM

SmartSiC 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability

Autori: Eric Guiot
Pubblicato in: 2024
Editore: ICSCRM

Engineered SiC materials for power technologies

Autori: W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie,E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat , N. Daval, S. Odoul, P. Sandri and C. Maleville
Pubblicato in: 2022 International Conference on IC Design and Technology (ICICDT), Numero INSPEC Accession Number: 22214351, 2022, Pagina/e 55 - 56
Editore: IEEE
DOI: 10.1109/icicdt56182.2022

Improved power cycling reliability through the use of SmartSiC engineered substrate for power devices

Autori: Eric Guiot, Frdric Allibert, Jrgen Leib, Tom Becker,Tobias Erlbacher
Pubblicato in: 2023
Editore: PCIM 2023

Ansatz zur Kollaboration in Wertschöpfungsnetzwerk-zentrierten Innovationsprozessen Smarter Produkte

Autori: MOLLAHASSANI, D., JURESA, Y., EICKHOFF, T., GÖBEL, J.C.
Pubblicato in: Proceedings Stuttgarter Symposium für Produktentwicklung, 2023
Editore: SSPE2023

High sensitivity surface defect inspection of SiC and SmartSiCTM substrates using a DUV laser-based system

Autori: Enrica Cela, Sam Shahidi , Prasant Parangi , Ramesh Shrestha, Gavin Simpson, Julie Widiez, Nicolas Daval, Audrey Chapelle, Séverin Rouchier, Walter Schwarzenbach
Pubblicato in: International Conference on Silicon Carbide and Related Materials 2022, Numero Defect and Diffusion Forum Vol. 425, 2022, Pagina/e 320-324, ISBN 978-3-0364-0167-6
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-4918s1

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

Autori: Philip Hens, Kevin M. Albrecht, Birgit Kallinger, Robin Karhu, Jrgen Erlekampf
Pubblicato in: 2024
Editore: ICSCRM

Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

Autori: Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Tobias Erlbacher, Carsten Hellinger, Séverin Rouchier
Pubblicato in: Materials Science Forum, Numero 1092, 2022, Pagina/e 201-207, ISSN 1662-9752
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-777hqg

Benchmarking experiment of substrate quality including SmartSiC wafers by epitaxy in a batch reactor

Autori: B. Kallinger, P. Hens, C. Kranert, K. M. Albrecht, J. Erlekampf
Pubblicato in: 2023
Editore: DGKK

Influence of Transfer Molding on the Reliability of DCM SiC Pow-er Modules

Autori: Jacek Rudzki, Henning Ströbel-Maier, Martin Becker, Patrick Heimler, Dong Xie, Mohamed Ala-luss, Thomas Basler, Anu Mathew, Sven Rzepka
Pubblicato in: 2024
Editore: PCIM Europe

Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

Autori: Marius Köhler, Michael Curkin, Christian Thomas, Nicolas Heuck, Jens Müller, Kurt-Georg Besendörfer
Pubblicato in: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, Pagina/e 506-509
Editore: IEEE
DOI: 10.1109/ispsd59661.2024.10579636

Design and Technology of Automotive Power Modules —An Introduction

Autori: Stefan Oeling
Pubblicato in: 2023
Editore: ISPSD

SiC engineered substrate: increasing SiC MOSFETs current density from device to module level

Autori: Eric GUIOT
Pubblicato in: 2024
Editore: APEC

Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices

Autori: Eric Guiot, Gonzalo Picun, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Alexis Drouin, Jean-Marc Béthoux, Julie Widiez, Séverin Rouchier, Tobias Erlbacher
Pubblicato in: PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2022
Editore: VDE
DOI: 10.30420/565822081

Design of a Four-Limb Coupled Inductor for a Three-phase Six-Switched Boost PFC Converter for EV Application

Autori: Kelly Ribeiro de Faria, Larbi Bendani, Nadjib Bouzidi
Pubblicato in: 2024
Editore: PCIM Europe

Supporting Collaborative Innovation Processes in Smart Product Value

Autori: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Pubblicato in: Procedia CIRP, Numero Volume 109, 2022, Pagina/e 349-355
Editore: Elsevier
DOI: 10.1016/j.procir.2022.05.261

Increasing SiC Power Devices Current Density up to 30% Through 150 & 200mm Semiconductor Substrate Engineering

Autori: E. Guiot, Frdric Allibert, Jrgen Leib, Tom Becker, Alexis Drouin, Walter Schwarzenbach
Pubblicato in: 2024
Editore: APEC

Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions

Autori: Dong Xie*, Patrick Heimler, Roman Boldyrjew-Mast, Mohamed Alaluss, Sven Thiele, Josef Lutz, Thomas Basler
Pubblicato in: 2024
Editore: ESREF24

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application

Autori: N. A. Mahadik, D. A. Scheiman, R. E. Stahlbush, A. Drouin, S. Rouchier, W.Schwarzenbach, M. Zielinski
Pubblicato in: 2024
Editore: ICSCRM

150 mm SiC engineered substrates for high-voltage power devices

Autori: Séverin Rouchier, et al
Pubblicato in: ICSCRM 2021, 2021
Editore: Material Science Forum published by Trans Tech Publications Ltd, Switzerland for ECSCRM 2021
DOI: 10.4028/p-mxxdef

SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

Autori: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Pubblicato in: 2024
Editore: ICSRM 2024

Wide Bandgap Material Transfer as a Flagship Technology for Future High Power Devices

Autori: J. Widiez, G. Gelineau, C. Masante, J. Chrétien, A. Moulin, V. Prudkovskiy, N. Troutot, E. Rolland, P. Gergaud, D. Mariolle, S. Barbet, L. Corbin, V. Amalbert, P. Gilles, F. Milesi, F. Mazen, L. Le Van-Jodin
Pubblicato in: 2023
Editore: MRS FALL 2023

Wide band-gap material transfer using Smart CutTM technology for power electronics

Autori: J. Widiez
Pubblicato in: 2024
Editore: VLSI-TSA

Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base – A game changer in SiC power device performance and reliability

Autori: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Pubblicato in: 2024
Editore: Bodo's Power

Bosch Semiconductors, large size 1200V MOSFETs prepared on SmartSiC were presented on the booth during PCIM 2024

Autori: E. Guiot, Metin Koyuncu
Pubblicato in: 2024
Editore: PCIM

Investigation of Stability and Oscillations at Power Modules with Low Stray Inductance

Autori: S. Buetow, M. Spang
Pubblicato in: 2022
Editore: ISPSD (International Symposium on Power Semiconductor Devices and ICs)

Supporting Collaborative Innovation Processes in Smart Product ValueCreation Networks

Autori: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Pubblicato in: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks, 2022, Pagina/e 5
Editore: CIRP DESIGN 2022

SmartSiCTM for Manufacturing of SiC Power Devices

Autori: Nicolas Daval et al
Pubblicato in: EDTM 2022, 2022
Editore: EDTM 2022

ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

Autori: Arnulf Sehlinger, Dominik Plein, Hendrik Plooij, Sebastian Spring
Pubblicato in: 2024
Editore: NAFEMS

Digital twin-based lifetime estimation of SiC power modules

Autori: Anu Mathew; Sven Rzepka; Mohamed Alaluss; Patrick Heimler; Dong Xie; Thomas Basler
Pubblicato in: 2024
Editore: ISPSD

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Autori: C. Masante, J. M. Bethoux, G. Gelineau, E. Rolland, S. Barbet, A. Moulin, L. Turchetti, O. Ledoux, W. Schwarzenbach, S. Rouchier, M. Delcroix, N. Troutot, S. Huet, V. Prudkovskiy, K. Mony, J. Biscarrat, J. Widiez
Pubblicato in: 2023
Editore: ICSCRM 2023

The mobility scenario vs Green Deal Objectives

Autori: A.Imbruglia, F.Gennaro, P.Di Grazia
Pubblicato in: Smart System Integration 2022, 2022, Pagina/e 5
Editore: SSI2022

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

Autori: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Pubblicato in: 2024
Editore: ICSCRM

A greener SiC wafer with Smart Cut technology

Autori: OLIVIER BONNIN, ERIC GUIOT, WALTER SCHWARZENBACHM AND GONZALO PICUN
Pubblicato in: Compound Semiconductor, 2021
Editore: Compound Semiconductor

Focus Topic: Wide Bandgap Semiconductors

Autori: Filippo Di Giovanni
Pubblicato in: Oral presentation / Electronica 2022, 2022
Editore: Electronica 2022

Dynamic Flux Balance Control of a Phase-shifted Full Bridge

Autori: Jan Martiš, Pavel Vorel, Radek Tománek
Pubblicato in: 2023 International Conference on Electrical Drives and Power Electronics (EDPE), 2023, Pagina/e 1-5
Editore: IEEE
DOI: 10.1109/edpe58625.2023.10274035

Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

Autori: R. Bakri, X. Margueron, W. da Cunha Alves, X. Cimetiere, F. Gillon, A. Bruyere, L. Vatamanu
Pubblicato in: 2022
Editore: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autori: Damun Mollahassani, Thomas Eickhoff, Andreas Eiden, Jens C. Göbel
Pubblicato in: Tag des Systems Engineering 2022 - Tagungsband Paderborn, Numero Band 20, 2022, ISBN 9783981880533
Editore: Gesellschaft für Systems Engineering e.V.

Comparison of Two Bidirectional 11KW 400V CLLC and CLLLC Resonant Converters for EV Applications

Autori: Hasan Mousavi Somarin, Norbert Messi, Farshid Sarrafin Ardebili, Luiz Braz
Pubblicato in: 2024
Editore: PCIM Europe

Poly-SiC characterization and properties for SmartSiC

Autori: H. Biard, A. Drouin, W. Schwarzenbach, K. Alassaad, L. Coeurdray, V. Chagneux, M. Coche, S. Monnoye, H. Mank, S. Rouchier, T. Barge, D. Radisson, A. Moulin, S. Barbet, J. Widiez, S. Odoul, C. Maleville
Pubblicato in: 2023
Editore: ICSCRM

Proven Power Cycling Reliability of SmartSiCTM Substrate for power device

Autori: E. Guiot,Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Carsten Hellinger, Tobias Erlbacher, Séverin Rouchier
Pubblicato in: PCIM 2022, 2022
Editore: Mesago for PCIM 2022

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autori: MOLLAHASSANI, D., EICKHOFF, T., EIDEN, A., GÖBEL, J.C.
Pubblicato in: 2023, ISBN 9783981880588
Editore: TdSE

technologyBetterGreenerFasterSmartSiC™ 150 & 200mm engineered substrate:increasing SiC power device current density up to 30%

Autori: Gonzalo Picun, Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin1,Walter Schwarzenbach
Pubblicato in: 2024
Editore: PCIM Europe

Application of advanced characterization techniques to SmartSiC product for substrate-level device performance optimization

Autori: A. Drouin, R. Simon, W. Schwarzenbach, M. Zielenski, D. Radisson, E. Guiot, E. Cela, A. Chapelle, H. Biard
Pubblicato in: 2023
Editore: ICSCRM 2023

SmartSiCTM : Boosting SiC performance for high-voltage power applications

Autori: Walter Schwarzenbach, Severin Rouchier, G. Berre, R. Boulet, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Mank, C. Moisson, H. Biard, M. Lagrange, A. Quintero Colmenares, L. Kabelaan, L. Viravaux, N. Ben Mohamed, D. Radisson, E. Guiot, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, E. Rolland, G. Gélineau, K. Vladimirova, N. Troutot, A. Moulin, V. Prudkovski, S. Barbet, D. Delprat, N. Da
Pubblicato in: Industrial Session / ICSCRM 2022, 2022
Editore: ICSCRM 2022

Evaluation of crystal quality and dopant activation ofSmart Cut™ transferred 4H SiC thin film

Autori: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Pubblicato in: Scientific Poster / ICSCRM22, 2022
Editore: ICSCRM22

Radiation Hardness of SiCTrenchMOSFETDevices

Autori: Stephan Schwaiger, Jan, Alsmeier, Hadiuzzaman Syed, Alberto Martinez-Limia, Klaus Heyers
Pubblicato in: 2023
Editore: Semicon Europa 2023

Game Changers in SiC Power Device Performance and Reliability

Autori: Picun G*, Zumbo L+, Bellocchi G+, Guiot E*, Guarnera A+, Rascunà S+, Imbruglia A+, Arena G+,
Pubblicato in: 2024
Editore: Bodo's Power

Centrotherm High Temperature Annealing and Oxidation Furnaces

Autori: P. Schmid
Pubblicato in: 2023
Editore: ICSCRM

Empowering electric vehicles with superior SiC SmartSiC substrates hold the key to ramping volumes of better SiC devices for automotive and industrial applications

Autori: EMMANUEL SABONNADIRE, CHRISTOPHE MALEVILLE AND CYRIL MENON
Pubblicato in: Compound Semiconductor Magazine, 2023
Editore: Compound Semiconductor Magazine

Advancements in Non-contact High-resolution Resistivity Imaging of Wide Bandgap Materials

Autori: M. Klein, S.Vinodh, B.Chen
Pubblicato in: Industry session / ICSCRM22, 2022
Editore: ICSCRM22

TRANSFORM: Trusted European SiC Value Chain for a greener Economy

Autori: M. Koyuncu
Pubblicato in: 2024
Editore: Semicon Europa 2024

Role of interface/border traps on the threshold voltage instability of SiC power transistors

Autori: V. Volosov, S. Cascino, M. Saggio, A. Imbruglia, F. Di Giovanni, C. Fiegna, E. Sangiorgi, A.N. Tallarico
Pubblicato in: Solid-State Electronics, Numero 207, 2023, Pagina/e 108699, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108699

Knowledge Collaboration Approach in Smart Product Innovation Networks

Autori: Damun Mollahassani, Thomas Eickhoff, Yannick Juresa, Jens C. Göbel
Pubblicato in: Procedia CIRP, Numero 119, 2024, Pagina/e 662-668, ISSN 2212-8271
Editore: CIRP Design
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Numerical Robustness Evaluation of Floating-Point Closed-Loop Control Based on Interval Analysis

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DOI: 10.3390/en15061976

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Advanced Local Grid Control System for Offshore Wind Turbines with the Diode-Based Rectifier HVDC Link Implemented in a True Scalable Test Bench

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ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

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