Trusted European SiC Value Chain for a greener Economy

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC

Autores: V.S Prudkovskiy, R. Templier, A. Moulin, N. Troutot, G. Gelineau, S. Huet, V H. Le, K. Mony, G. Lapertot, M. Delcroix, S. Caridroit, S. Barbet, J. Widiez
Publicado en: 2023
Editor: ICSCRM 2023

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

Autores: Malle Le Cunff, Franois Rieutord, Didier Landru, Oleg Kononchuk and Nikolay Cherkashin
Publicado en: 2024
Editor: ICSCRM

Adaptive Resonant Controller for a Three-Phase PFC Converter for an On-Board Charge Application

Autores: Rami Troudi, Kelly Ribeiro de Faria, Moctar Coulibaly
Publicado en: 2024
Editor: PCIM Europe

Processing and electrical characterization of SiC-on-Insulator structures

Autores: Guillaume GELINEAU, Cédric MASANTE, Emmanuel Rolland, Sophie BARBET, Lucie CORBIN, Anne-Marie PAPON, Simon CARIDROIT, Mathieu DELCROIX, Stéphanie HUET, Alexandre MOULIN, Vladimir PRUDKOVSKIY, Nicolas TROUTOT, Séverin ROUCHIER, Loïc TURCHETTI, Karine MONY, Julie WIDIEZ
Publicado en: 2023
Editor: ICSCRM 2023

New Die Attach Materials: Silver and Silver/ Copper sintering pastes

Autores: B. Rábay, A. Stelzer
Publicado en: 2022
Editor: PCIM Europe Conference 2022

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing

Autores: E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast , S. Shahidi , G. Simpson
Publicado en: 2024
Editor: ICSCRM

Smart CutTM SiC: enabling a larger adoption of SiC substrate for power devices

Autores: E. Guiot et al
Publicado en: APEC 2022, 2022
Editor: IEEE

Gate Oxide Performance and Reliability on SmartSiC Wafers and the Influence of RTA processing on Gate Oxide Lifetime

Autores: T. Becker, M. Rommel, H. Schlichting, E. Guiot and F. Allibert
Publicado en: 2024
Editor: ICSCRM

Benchmarking experiment of substrate quality including SmartSiCTM wafers by epitaxy in a batch reactor

Autores: B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
Publicado en: Solid State Phenomena,, Edición Volume 342, 2022, Página(s) 91-98, ISSN 1662-9779
Editor: Trans Tech Publications Ltd
DOI: 10.4028/v-868lqn

Efficiency, Volume and CO2 Emissions Comparison in a PFC Converter with an Active Filter Solution for OBC Application

Autores: Kelly Ribeiro de Faria, Jean-Raphael Capounda, Vineel Rajagopal, Pascal Menegazzi, Benjamin Paul, Nabil Kamil, Soleiman Galeshi, Norbert Messi
Publicado en: 2024
Editor: PCIM Europe

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates

Autores: G. Bellocchi, S. Rascuna`, P. Mancuso, G. Arena, M. Saggio G. Picun, E. Guiot, W. Schwarzenbach
Publicado en: 2024
Editor: ICSCRM

Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

Autores: Dr. Bernd Dielacher (presenter), Péter Kerepesi
Publicado en: 2024
Editor: PE International 2024 conference

Analysis of SysML-based Product Development Collaborations in Cross-Company Value Creation Network

Autores: MOLLAHASSANI, D., BOSSE. R., GÖBEL, J.C.
Publicado en: prostep ivip SYMPOSIUM, 2023
Editor: prostep ivip

Comparison of High Frequency Three Phase Transformer Technologiesfor High Power Density On Board Chargers

Autores: Wendell da Cunha Alves, Norbert Messi
Publicado en: 2023
Editor: PCIM Europe

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autores: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Publicado en: Materials Science Forum, Edición 1089(2), 2022, Página(s) 71-79, ISSN 1662-9752
Editor: Trans Tech Publications Ltd
DOI: 10.4028/p-026sj4

Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

Autores: Dominik Sumkötter, Mario Wollschläger, Marius Köhler, Marcel Lawniczak, Johannes Weickmann, Kurt-Georg Besendörfer, Nicolas Heuck
Publicado en: 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC), 2024, Página(s) 596-602
Editor: IEEE
DOI: 10.1109/eptc59621.2023.10457720

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autores: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Publicado en: 2023
Editor: EPE

Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Autores: Patrick Heimler, Mohamed Alaluss, Christian Schwabe, Xing Liu, Josef Lutz, Thomas Basler
Publicado en: EPE 2023, 2023
Editor: EPE 2023

SmartSiC 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

Autores: Eric Guiot , Frdric Allibert, Jrgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin, Walter Schwarzenbach
Publicado en: 2024
Editor: PCIM

Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

Autores: Michael Curkin, Marius Köhler, Silke Kraft, Jens Mueller, Kurt-Georg Besendoerfer, Nicolas Heuck
Publicado en: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, Página(s) 1682-1688
Editor: IEEE
DOI: 10.1109/ectc51909.2023.00286

Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

Autores: H. Biard, W. Schwarzenbach, S. Odoul, I. Radu,A. Potier, M. Ferrato, E. Guajioty
Publicado en: Diffusion and Defect Data Pt.B: Solid State Phenomena, Edición 344(12), 2022, Página(s) 47-52, ISSN 1662-9779
Editor: Trans Tech Publications Ltd
DOI: 10.4028/p-65127n

Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

Autores: G. GELINEAU, J. WIDIEZ, E. ROLLAND, K. VLADIMIROVA, A. MOULIN, V. PRUDKOVSKIY, N. TROUTOT, P. GERGAUD, D. MARIOLLE, S. BARBET, V. AMALBERT, G. LAPERTOT, K. MONY, S. ROUCHIER, R. BOULET, G. BERRE, W .SCHWARZENBACH, Y. BOGUMILOWICZ
Publicado en: 2022
Editor: ICSCRM

Automotive Charger Grid-Forming Control Opportunities for G2V and V2X Applications

Autores: Elie Fayad, Damian Sal y Rosas, Antoine Bruyere, Fredy Poirier
Publicado en: 2023 IEEE Vehicle Power and Propulsion Conference (VPPC), 2024, Página(s) 1-6
Editor: IEEE
DOI: 10.1109/vppc60535.2023.10403262

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

Autores: M. Alaluss, C. Böhm, P. Heimler, T. Basler, A. Elsayed, K. Oberdieck, S. Goel
Publicado en: 2024
Editor: ICSCRM

SmartSiC : a greener, faster and better technology for SiC

Autores: Olivier BONNIN
Publicado en: 2023
Editor: ICSCRM 2023

SmartSiC substrate : increasing SiC MOSFETs current density from device to module level

Autores: E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach; T. Erlbacher
Publicado en: 2023
Editor: ICSCRM

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Autores: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Publicado en: 2024
Editor: ICSCRM

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

Autores: A. Abbas, C. Le Royer, R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez, S. Gningue, S. Rouchier, F. Allibert, W. Schwarzenbach, E. Bano, P. Godignon
Publicado en: 2024
Editor: ICSCRM

Study on epi performance of engineered 150 mm and 200 mmSiC substrates in a multi-wafer batch reactor

Autores: Philip Hens K.M. Albrecht Birgit Kallinger R. Karhu J. Erlekampf
Publicado en: 2024
Editor: ICSCRM2024

Crystal originated defects monitoring and reduction in production grade SmartSiC engineered substrates

Autores: E. Cela, K. Alassaad, A. Chapelle, S. Rouchier, W. Schwarzenbach, A. Drouin, V. Chagneux, M. Zielinski
Publicado en: 2023
Editor: ICSCRM 2023

Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

Autores: Jan Martiš, Pavel Vorel
Publicado en: 2023
Editor: BUT

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering

Autores: N. Piluso, C. Calabretta, E. Fontana, G. Maira, A. Russo, A. Severino, G. Arena, E. Guiot, A. Drouin, W. Schwarzenbach
Publicado en: 2024
Editor: ICSCRM

SmartSiC 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability

Autores: Eric Guiot
Publicado en: 2024
Editor: ICSCRM

Engineered SiC materials for power technologies

Autores: W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie,E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat , N. Daval, S. Odoul, P. Sandri and C. Maleville
Publicado en: 2022 International Conference on IC Design and Technology (ICICDT), Edición INSPEC Accession Number: 22214351, 2022, Página(s) 55 - 56
Editor: IEEE
DOI: 10.1109/icicdt56182.2022

Improved power cycling reliability through the use of SmartSiC engineered substrate for power devices

Autores: Eric Guiot, Frdric Allibert, Jrgen Leib, Tom Becker,Tobias Erlbacher
Publicado en: 2023
Editor: PCIM 2023

Ansatz zur Kollaboration in Wertschöpfungsnetzwerk-zentrierten Innovationsprozessen Smarter Produkte

Autores: MOLLAHASSANI, D., JURESA, Y., EICKHOFF, T., GÖBEL, J.C.
Publicado en: Proceedings Stuttgarter Symposium für Produktentwicklung, 2023
Editor: SSPE2023

High sensitivity surface defect inspection of SiC and SmartSiCTM substrates using a DUV laser-based system

Autores: Enrica Cela, Sam Shahidi , Prasant Parangi , Ramesh Shrestha, Gavin Simpson, Julie Widiez, Nicolas Daval, Audrey Chapelle, Séverin Rouchier, Walter Schwarzenbach
Publicado en: International Conference on Silicon Carbide and Related Materials 2022, Edición Defect and Diffusion Forum Vol. 425, 2022, Página(s) 320-324, ISBN 978-3-0364-0167-6
Editor: Trans Tech Publications Ltd
DOI: 10.4028/p-4918s1

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

Autores: Philip Hens, Kevin M. Albrecht, Birgit Kallinger, Robin Karhu, Jrgen Erlekampf
Publicado en: 2024
Editor: ICSCRM

Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

Autores: Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Tobias Erlbacher, Carsten Hellinger, Séverin Rouchier
Publicado en: Materials Science Forum, Edición 1092, 2022, Página(s) 201-207, ISSN 1662-9752
Editor: Trans Tech Publications Ltd
DOI: 10.4028/p-777hqg

Benchmarking experiment of substrate quality including SmartSiC wafers by epitaxy in a batch reactor

Autores: B. Kallinger, P. Hens, C. Kranert, K. M. Albrecht, J. Erlekampf
Publicado en: 2023
Editor: DGKK

Influence of Transfer Molding on the Reliability of DCM SiC Pow-er Modules

Autores: Jacek Rudzki, Henning Ströbel-Maier, Martin Becker, Patrick Heimler, Dong Xie, Mohamed Ala-luss, Thomas Basler, Anu Mathew, Sven Rzepka
Publicado en: 2024
Editor: PCIM Europe

Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

Autores: Marius Köhler, Michael Curkin, Christian Thomas, Nicolas Heuck, Jens Müller, Kurt-Georg Besendörfer
Publicado en: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, Página(s) 506-509
Editor: IEEE
DOI: 10.1109/ispsd59661.2024.10579636

Design and Technology of Automotive Power Modules —An Introduction

Autores: Stefan Oeling
Publicado en: 2023
Editor: ISPSD

SiC engineered substrate: increasing SiC MOSFETs current density from device to module level

Autores: Eric GUIOT
Publicado en: 2024
Editor: APEC

Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices

Autores: Eric Guiot, Gonzalo Picun, Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Alexis Drouin, Jean-Marc Béthoux, Julie Widiez, Séverin Rouchier, Tobias Erlbacher
Publicado en: PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2022
Editor: VDE
DOI: 10.30420/565822081

Design of a Four-Limb Coupled Inductor for a Three-phase Six-Switched Boost PFC Converter for EV Application

Autores: Kelly Ribeiro de Faria, Larbi Bendani, Nadjib Bouzidi
Publicado en: 2024
Editor: PCIM Europe

Supporting Collaborative Innovation Processes in Smart Product Value

Autores: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Publicado en: Procedia CIRP, Edición Volume 109, 2022, Página(s) 349-355
Editor: Elsevier
DOI: 10.1016/j.procir.2022.05.261

Increasing SiC Power Devices Current Density up to 30% Through 150 & 200mm Semiconductor Substrate Engineering

Autores: E. Guiot, Frdric Allibert, Jrgen Leib, Tom Becker, Alexis Drouin, Walter Schwarzenbach
Publicado en: 2024
Editor: APEC

Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions

Autores: Dong Xie*, Patrick Heimler, Roman Boldyrjew-Mast, Mohamed Alaluss, Sven Thiele, Josef Lutz, Thomas Basler
Publicado en: 2024
Editor: ESREF24

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application

Autores: N. A. Mahadik, D. A. Scheiman, R. E. Stahlbush, A. Drouin, S. Rouchier, W.Schwarzenbach, M. Zielinski
Publicado en: 2024
Editor: ICSCRM

150 mm SiC engineered substrates for high-voltage power devices

Autores: Séverin Rouchier, et al
Publicado en: ICSCRM 2021, 2021
Editor: Material Science Forum published by Trans Tech Publications Ltd, Switzerland for ECSCRM 2021
DOI: 10.4028/p-mxxdef

SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

Autores: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Publicado en: 2024
Editor: ICSRM 2024

Wide Bandgap Material Transfer as a Flagship Technology for Future High Power Devices

Autores: J. Widiez, G. Gelineau, C. Masante, J. Chrétien, A. Moulin, V. Prudkovskiy, N. Troutot, E. Rolland, P. Gergaud, D. Mariolle, S. Barbet, L. Corbin, V. Amalbert, P. Gilles, F. Milesi, F. Mazen, L. Le Van-Jodin
Publicado en: 2023
Editor: MRS FALL 2023

Wide band-gap material transfer using Smart CutTM technology for power electronics

Autores: J. Widiez
Publicado en: 2024
Editor: VLSI-TSA

Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base – A game changer in SiC power device performance and reliability

Autores: G. Picun; Dr. L. Zumbo;Dr. E. Guiot; G. Bellocchi; A. Guarnera; S. Rascunà; A. Imbruglia; G. Arena; M. Saggio
Publicado en: 2024
Editor: Bodo's Power

Bosch Semiconductors, large size 1200V MOSFETs prepared on SmartSiC were presented on the booth during PCIM 2024

Autores: E. Guiot, Metin Koyuncu
Publicado en: 2024
Editor: PCIM

Investigation of Stability and Oscillations at Power Modules with Low Stray Inductance

Autores: S. Buetow, M. Spang
Publicado en: 2022
Editor: ISPSD (International Symposium on Power Semiconductor Devices and ICs)

Supporting Collaborative Innovation Processes in Smart Product ValueCreation Networks

Autores: Damun Mollahassani, Jonas Gries, Sven Forte, Jens C. Göbel
Publicado en: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks, 2022, Página(s) 5
Editor: CIRP DESIGN 2022

SmartSiCTM for Manufacturing of SiC Power Devices

Autores: Nicolas Daval et al
Publicado en: EDTM 2022, 2022
Editor: EDTM 2022

ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

Autores: Arnulf Sehlinger, Dominik Plein, Hendrik Plooij, Sebastian Spring
Publicado en: 2024
Editor: NAFEMS

Digital twin-based lifetime estimation of SiC power modules

Autores: Anu Mathew; Sven Rzepka; Mohamed Alaluss; Patrick Heimler; Dong Xie; Thomas Basler
Publicado en: 2024
Editor: ISPSD

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Autores: C. Masante, J. M. Bethoux, G. Gelineau, E. Rolland, S. Barbet, A. Moulin, L. Turchetti, O. Ledoux, W. Schwarzenbach, S. Rouchier, M. Delcroix, N. Troutot, S. Huet, V. Prudkovskiy, K. Mony, J. Biscarrat, J. Widiez
Publicado en: 2023
Editor: ICSCRM 2023

The mobility scenario vs Green Deal Objectives

Autores: A.Imbruglia, F.Gennaro, P.Di Grazia
Publicado en: Smart System Integration 2022, 2022, Página(s) 5
Editor: SSI2022

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

Autores: V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
Publicado en: 2024
Editor: ICSCRM

A greener SiC wafer with Smart Cut technology

Autores: OLIVIER BONNIN, ERIC GUIOT, WALTER SCHWARZENBACHM AND GONZALO PICUN
Publicado en: Compound Semiconductor, 2021
Editor: Compound Semiconductor

Focus Topic: Wide Bandgap Semiconductors

Autores: Filippo Di Giovanni
Publicado en: Oral presentation / Electronica 2022, 2022
Editor: Electronica 2022

Dynamic Flux Balance Control of a Phase-shifted Full Bridge

Autores: Jan Martiš, Pavel Vorel, Radek Tománek
Publicado en: 2023 International Conference on Electrical Drives and Power Electronics (EDPE), 2023, Página(s) 1-5
Editor: IEEE
DOI: 10.1109/edpe58625.2023.10274035

Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

Autores: R. Bakri, X. Margueron, W. da Cunha Alves, X. Cimetiere, F. Gillon, A. Bruyere, L. Vatamanu
Publicado en: 2022
Editor: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autores: Damun Mollahassani, Thomas Eickhoff, Andreas Eiden, Jens C. Göbel
Publicado en: Tag des Systems Engineering 2022 - Tagungsband Paderborn, Edición Band 20, 2022, ISBN 9783981880533
Editor: Gesellschaft für Systems Engineering e.V.

Comparison of Two Bidirectional 11KW 400V CLLC and CLLLC Resonant Converters for EV Applications

Autores: Hasan Mousavi Somarin, Norbert Messi, Farshid Sarrafin Ardebili, Luiz Braz
Publicado en: 2024
Editor: PCIM Europe

Poly-SiC characterization and properties for SmartSiC

Autores: H. Biard, A. Drouin, W. Schwarzenbach, K. Alassaad, L. Coeurdray, V. Chagneux, M. Coche, S. Monnoye, H. Mank, S. Rouchier, T. Barge, D. Radisson, A. Moulin, S. Barbet, J. Widiez, S. Odoul, C. Maleville
Publicado en: 2023
Editor: ICSCRM

Proven Power Cycling Reliability of SmartSiCTM Substrate for power device

Autores: E. Guiot,Frédéric Allibert, Jürgen Leib, Tom Becker, Walter Schwarzenbach, Carsten Hellinger, Tobias Erlbacher, Séverin Rouchier
Publicado en: PCIM 2022, 2022
Editor: Mesago for PCIM 2022

Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

Autores: MOLLAHASSANI, D., EICKHOFF, T., EIDEN, A., GÖBEL, J.C.
Publicado en: 2023, ISBN 9783981880588
Editor: TdSE

technologyBetterGreenerFasterSmartSiC™ 150 & 200mm engineered substrate:increasing SiC power device current density up to 30%

Autores: Gonzalo Picun, Eric Guiot, Frédéric Allibert, Jürgen Leib, Tom Becker, Oleg Rusch, Alexis Drouin1,Walter Schwarzenbach
Publicado en: 2024
Editor: PCIM Europe

Application of advanced characterization techniques to SmartSiC product for substrate-level device performance optimization

Autores: A. Drouin, R. Simon, W. Schwarzenbach, M. Zielenski, D. Radisson, E. Guiot, E. Cela, A. Chapelle, H. Biard
Publicado en: 2023
Editor: ICSCRM 2023

SmartSiCTM : Boosting SiC performance for high-voltage power applications

Autores: Walter Schwarzenbach, Severin Rouchier, G. Berre, R. Boulet, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Mank, C. Moisson, H. Biard, M. Lagrange, A. Quintero Colmenares, L. Kabelaan, L. Viravaux, N. Ben Mohamed, D. Radisson, E. Guiot, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, E. Rolland, G. Gélineau, K. Vladimirova, N. Troutot, A. Moulin, V. Prudkovski, S. Barbet, D. Delprat, N. Da
Publicado en: Industrial Session / ICSCRM 2022, 2022
Editor: ICSCRM 2022

Evaluation of crystal quality and dopant activation ofSmart Cut™ transferred 4H SiC thin film

Autores: G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle, S. Barbet, V.Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
Publicado en: Scientific Poster / ICSCRM22, 2022
Editor: ICSCRM22

Radiation Hardness of SiCTrenchMOSFETDevices

Autores: Stephan Schwaiger, Jan, Alsmeier, Hadiuzzaman Syed, Alberto Martinez-Limia, Klaus Heyers
Publicado en: 2023
Editor: Semicon Europa 2023

Game Changers in SiC Power Device Performance and Reliability

Autores: Picun G*, Zumbo L+, Bellocchi G+, Guiot E*, Guarnera A+, Rascunà S+, Imbruglia A+, Arena G+,
Publicado en: 2024
Editor: Bodo's Power

Centrotherm High Temperature Annealing and Oxidation Furnaces

Autores: P. Schmid
Publicado en: 2023
Editor: ICSCRM

Empowering electric vehicles with superior SiC SmartSiC substrates hold the key to ramping volumes of better SiC devices for automotive and industrial applications

Autores: EMMANUEL SABONNADIRE, CHRISTOPHE MALEVILLE AND CYRIL MENON
Publicado en: Compound Semiconductor Magazine, 2023
Editor: Compound Semiconductor Magazine

Advancements in Non-contact High-resolution Resistivity Imaging of Wide Bandgap Materials

Autores: M. Klein, S.Vinodh, B.Chen
Publicado en: Industry session / ICSCRM22, 2022
Editor: ICSCRM22

TRANSFORM: Trusted European SiC Value Chain for a greener Economy

Autores: M. Koyuncu
Publicado en: 2024
Editor: Semicon Europa 2024

Role of interface/border traps on the threshold voltage instability of SiC power transistors

Autores: V. Volosov, S. Cascino, M. Saggio, A. Imbruglia, F. Di Giovanni, C. Fiegna, E. Sangiorgi, A.N. Tallarico
Publicado en: Solid-State Electronics, Edición 207, 2023, Página(s) 108699, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2023.108699

Knowledge Collaboration Approach in Smart Product Innovation Networks

Autores: Damun Mollahassani, Thomas Eickhoff, Yannick Juresa, Jens C. Göbel
Publicado en: Procedia CIRP, Edición 119, 2024, Página(s) 662-668, ISSN 2212-8271
Editor: CIRP Design
DOI: 10.1016/j.procir.2023.02.158

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Autores: Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico
Publicado en: Micromachines, Edición 15, 2024, Página(s) 872, ISSN 2072-666X
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi15070872

Comparative study of methods for counting of dislocations in 4H-SiC

Autores: Christian Kranert, Paul Wimmer, Alexis Drouin, Christian Reimann, Jochen Friedrich
Publicado en: Materials Science in Semiconductor Processing, Edición 170, 2023, Página(s) 107948, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2023.107948

Numerical Robustness Evaluation of Floating-Point Closed-Loop Control Based on Interval Analysis

Autores: Filippo Savi, Amin Farjudian, Giampaolo Buticchi, Davide Barater, Giovanni Franceschini
Publicado en: Electronics, Edición 12, 2024, Página(s) 390, ISSN 2079-9292
Editor: MDPI
DOI: 10.3390/electronics12020390

Optimization-Based Capacitor Balancing Method with Customizable Switching Reduction for CHB Converters

Autores: Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
Publicado en: Special Edición Advances in Multilevel Converter/Inverter Topologies and Applications. Energies (MDPI), 2022, ISSN 1996-1073
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en15061976

Optimization-Based Capacitor Balancing Method with Selective DC Current Ripple Reduction for CHB Converters

Autores: Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
Publicado en: Special Edición Advances in Multilevel Converter/Inverter Topologies and Applications. Energies (MDPI), 2021, ISSN 1996-1073
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en15010243

Advanced Local Grid Control System for Offshore Wind Turbines with the Diode-Based Rectifier HVDC Link Implemented in a True Scalable Test Bench

Autores: Danilo Herrera,Thiago Tricarico,Diego Oliveira,Mauricio Aredes,Eduardo Galván-Díez and Juan M. Carrasco
Publicado en: Energies 2022, Edición Volume 15 (Edición 16), 5826, 2022, ISSN 1996-1073
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en15165826

Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC

Autores: Vladimir S. Prudkovskiy, Roselyne Templier, Alexandre Moulin, Nicolas Troutot, Guillaume Gelineau, Stéphanie Huet, Van-Hoan Le, Karine Mony, Gérard Lapertot, Mathieu Delcroix, Simon Caridroit, Sophie Barbet, Julie Widiez
Publicado en: Solid State Phenomena, Edición 362, 2024, Página(s) 71-75, ISSN 1662-9779
Editor: Scientific.net
DOI: 10.4028/p-ecbj77

Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures

Autores: Guillaume Gelineau, Cédric Masante, Emmanuel Rolland, Sophie Barbet, Lucie Corbin, Anne-Marie Papon, Simon Caridroit, Mathieu Delcroix, Stéphanie Huet, Alexandre Moulin, Vladimir S. Prudkovskiy, Nicolas Troutot, Séverin Rouchier, Loic Turchetti, Karine Mony, Julie Widiez
Publicado en: Materials Science Forum, Edición 1124, 2024, Página(s) 57-65, ISSN 1662-9752
Editor: Scientific.net
DOI: 10.4028/p-ydh8qb

ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

Autores: S. Spring, A.Sehlinger, D. Plein, H. Plooij
Publicado en: NAFEMS Online-Magazin, 2024, ISSN 2311-522X
Editor: NEFEMS

Benchmarking Experiment of Substrate Quality including SmartSiC<sup>TM</sup> Wafers by Epitaxy in a Batch Reactor

Autores: Birgit Kallinger, Philip Hens, Christian Kranert, Kevin M. Albrecht, Jürgen Erlekampf
Publicado en: Solid State Phenomena, Edición 342, 2024, Página(s) 91-98, ISSN 1662-9779
Editor: Scientific.net
DOI: 10.4028/p-av6tdz

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