Fluorides for 2D Next-Generation Nanoelectronics

Project Information

F2GO

Grant agreement ID: 101055379

DOI

10.3030/101055379

EC signature date 30 August 2022

Start date 1 September 2022

End date 31 August 2027

Funded under

• European Research Council (ERC)

Total cost

€ 2 498 609,00

EU contribution

€ 2 498 609,00

Coordinated by

TECHNISCHE UNIVERSITAET WIEN
Austria

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (10)

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Author(s): Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhr, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlgl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza
Published in: Nature Electronics, Issue 7, 2024, ISSN 2520-1131
Publisher: Springer Science and Business Media LLC
DOI: 10.1038/s41928-024-01233-w

Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects

Author(s): Theresia Knobloch, Dominic Waldhoer, Tibor Grasser
Published in: IEEE Nanotechnology Magazine, Issue 17, 2023, ISSN 1932-4510
Publisher: IEEE Nanotechnology Magazine
DOI: 10.1109/mnano.2023.3278969

Machine learning force field for thermal oxidation of silicon

Author(s): Lukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer, Diego Milardovich, Dominic Waldhör, Tibor Grasser
Published in: The Journal of Chemical Physics, Issue 161, 2024, ISSN 1089-7690
Publisher: AIP Publishing
DOI: 10.1063/5.0220091

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

Author(s): Aljoscha Söll, Edoardo Lopriore, Asmund Ottesen, Jan Luxa, Gabriele Pasquale, Jiri Sturala, František Hájek, Vítězslav Jarý, David Sedmidubský, Kseniia Mosina, Igor Sokolović, Saeed Rasouli, Tibor Grasser, Ulrike Diebold, Andras Kis, Zdeněk Sofer
Published in: ACS Nano, Issue 18, 2024, ISSN 1936-086X
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acsnano.3c10411

Initial stages of growth and electronic properties of epitaxial SrF2 thin films on Ag(1 1 1)

Author(s): Mauro Borghi, Andrea Mescola, Guido Paolicelli, Monica Montecchi, Sergio D'Addato, Simone Vacondio, Luca Bursi, Alice Ruini, Bryan P. Doyle, Tibor Grasser, Luca Pasquali
Published in: Applied Surface Science, Issue 656, 2024, ISSN 2520-1131
Publisher: Elsevier BV
DOI: 10.1016/j.apsusc.2024.159724

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Author(s): Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Published in: ECS Meeting Abstracts, Issue MA2023-01, 2023, ISSN 2151-2043
Publisher: The Electrochemical Society
DOI: 10.1149/ma2023-01331864mtgabs

All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Author(s): M. Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković
Published in: Nano Letters, Issue 24, 2024, ISSN 1530-6984
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acs.nanolett.4c00956

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Author(s): Dominic Waldhoer; Christian Schleich; Jakob Michl; Alexander Grill; Dieter Claes; Alexander Karl; Theresia Knobloch; Gerhard Rzepa; Jacopo Franco; Ben Kaczer; Michael Waltl; Tibor Grasser
Published in: IOP Science, 2023, ISSN 1872-941X
Publisher: Elsevier
DOI: 10.48550/arxiv.2212.11547

Observation of Rich Defect Dynamics in Monolayer MoS₂

Author(s): Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, Alexander Karl, Bernhard Stampfer, Dominic Waldhoer, Yikai Zheng, Najam U Sakib, Muhtasim Ul Karim Sadaf, Rahul Pendurthi, Riccardo Torsi, Joshua A. Robinson, Tibor Grasser, Saptarshi Das
Published in: ACS Nano, Issue 17, 2023, ISSN 1936-086X
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acsnano.2c12900

Comprehensive study of SrF2 growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy

Author(s): Mauro Borghi, Giulia Giovanelli, Monica Montecchi, Raffaella Capelli, Andrea Mescola, Guido Paolicelli, Sergio D’Addato, Tibor Grasser, Luca Pasquali
Published in: Applied Surface Science, Issue 680, 2024, ISSN 1873-5584
Publisher: Elsevier BV
DOI: 10.1016/j.apsusc.2024.161310

Conference proceedings (7)

Defects in Strontium Titanate: A First Principles Study

Author(s): Mina Bahrami, Dominic Waldhoer, Pedram Khakbaz, Theresia Knobloch, Aftab Nazir, Changze Liu, Tibor Grasser
Published in: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Issue 127, 2023
Publisher: IEEE
DOI: 10.23919/SISPAD57422.2023.10319515

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Author(s): Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Published in: ECS Transactions, Issue 111, 2023, ISSN 1938-6737
Publisher: The Electrochemical Society
DOI: 10.1149/11101.0219ecst

Reliability Assessment of Double-Gated Wafer-Scale MoS₂ Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses

Author(s): A. Provias, T. Knobloch, A. Kitamura, K. P. O’Brien, C. J. Dorow, D. Waldhoer, B. Stampfer, A. V. Penumatcha, S. Lee, R. Ramamurthy, S. Clendenning, M. Waltl, U. Avci, T. Grasser
Published in: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Publisher: IEEE
DOI: 10.1109/IEDM45741.2023.10413755

Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors

Author(s): T. Knobloch, D. Waldhoer, M. R. Davoudi, A. Karl, P. Khakbaz, M. Matzinger, Y. Zhang, K. K. H. Smithe, A. Nazir, C. Liu, Y. Y. Illarionov, E. Pop, H. Peng, B. Kaczer, T. Grasser
Published in: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Publisher: IEEE
DOI: 10.1109/IEDM45741.2023.10413824

Modeling the Impact of Interface and Border Traps on Hysteresis in Encapsulated Monolayer MoS₂ Based Double Gated FETs

Author(s): Rittik Ghosh, Theresia Knobloch, Alexander Karl, Christoph Wilhelmer, Alexandros Provias, Dominic Waldhör, Tibor Grasser
Published in: 2024 Austrochip Workshop on Microelectronics (Austrochip), 2024
Publisher: IEEE
DOI: 10.1109/Austrochip62761.2024.10716217

Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi₂O₂Se

Author(s): Mohammad Rasool Davoudi, Pedram Khakbaz, Theresia Knobloch, Dominic Waldhoer, Changze Liu, Aftab Nazir, Yichi Zhang, Hailin Peng, Tibor Grasser
Published in: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Issue 80, 2024
Publisher: IEEE
DOI: 10.23919/SISPAD57422.2023.10319609

(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials

Author(s): Theresia Knobloch, Tibor Grasser
Published in: ECS Meeting Abstracts, Issue MA2023-01, 2023, ISSN 2151-2043
Publisher: The Electrochemical Society
DOI: 10.1149/MA2023-01131319mtgabs