Fluorides for 2D Next-Generation Nanoelectronics

Información del proyecto

F2GO

Identificador del acuerdo de subvención: 101055379

DOI

10.3030/101055379

Fecha de la firma de la CE 30 Agosto 2022

Fecha de inicio 1 Septiembre 2022

Fecha de finalización 31 Agosto 2027

Financiado con arreglo a

• European Research Council (ERC)

Coste total

€ 2 498 609,00

Aportación de la UE

€ 2 498 609,00

Coordinado por

TECHNISCHE UNIVERSITAET WIEN
Austria

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Publicaciones

Peer reviewed articles (10)

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Autores: Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhr, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlgl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza
Publicado en: Nature Electronics, Edición 7, 2024, ISSN 2520-1131
Editor: Springer Science and Business Media LLC
DOI: 10.1038/s41928-024-01233-w

Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects

Autores: Theresia Knobloch, Dominic Waldhoer, Tibor Grasser
Publicado en: IEEE Nanotechnology Magazine, Edición 17, 2023, ISSN 1932-4510
Editor: IEEE Nanotechnology Magazine
DOI: 10.1109/mnano.2023.3278969

Machine learning force field for thermal oxidation of silicon

Autores: Lukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer, Diego Milardovich, Dominic Waldhör, Tibor Grasser
Publicado en: The Journal of Chemical Physics, Edición 161, 2024, ISSN 1089-7690
Editor: AIP Publishing
DOI: 10.1063/5.0220091

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

Autores: Aljoscha Söll, Edoardo Lopriore, Asmund Ottesen, Jan Luxa, Gabriele Pasquale, Jiri Sturala, František Hájek, Vítězslav Jarý, David Sedmidubský, Kseniia Mosina, Igor Sokolović, Saeed Rasouli, Tibor Grasser, Ulrike Diebold, Andras Kis, Zdeněk Sofer
Publicado en: ACS Nano, Edición 18, 2024, ISSN 1936-086X
Editor: American Chemical Society (ACS)
DOI: 10.1021/acsnano.3c10411

Initial stages of growth and electronic properties of epitaxial SrF2 thin films on Ag(1 1 1)

Autores: Mauro Borghi, Andrea Mescola, Guido Paolicelli, Monica Montecchi, Sergio D'Addato, Simone Vacondio, Luca Bursi, Alice Ruini, Bryan P. Doyle, Tibor Grasser, Luca Pasquali
Publicado en: Applied Surface Science, Edición 656, 2024, ISSN 2520-1131
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2024.159724

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Autores: Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Publicado en: ECS Meeting Abstracts, Edición MA2023-01, 2023, ISSN 2151-2043
Editor: The Electrochemical Society
DOI: 10.1149/ma2023-01331864mtgabs

All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Autores: M. Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković
Publicado en: Nano Letters, Edición 24, 2024, ISSN 1530-6984
Editor: American Chemical Society (ACS)
DOI: 10.1021/acs.nanolett.4c00956

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Autores: Dominic Waldhoer; Christian Schleich; Jakob Michl; Alexander Grill; Dieter Claes; Alexander Karl; Theresia Knobloch; Gerhard Rzepa; Jacopo Franco; Ben Kaczer; Michael Waltl; Tibor Grasser
Publicado en: IOP Science, 2023, ISSN 1872-941X
Editor: Elsevier
DOI: 10.48550/arxiv.2212.11547

Observation of Rich Defect Dynamics in Monolayer MoS₂

Autores: Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, Alexander Karl, Bernhard Stampfer, Dominic Waldhoer, Yikai Zheng, Najam U Sakib, Muhtasim Ul Karim Sadaf, Rahul Pendurthi, Riccardo Torsi, Joshua A. Robinson, Tibor Grasser, Saptarshi Das
Publicado en: ACS Nano, Edición 17, 2023, ISSN 1936-086X
Editor: American Chemical Society (ACS)
DOI: 10.1021/acsnano.2c12900

Comprehensive study of SrF2 growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy

Autores: Mauro Borghi, Giulia Giovanelli, Monica Montecchi, Raffaella Capelli, Andrea Mescola, Guido Paolicelli, Sergio D’Addato, Tibor Grasser, Luca Pasquali
Publicado en: Applied Surface Science, Edición 680, 2024, ISSN 1873-5584
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2024.161310

Conference proceedings (7)

Defects in Strontium Titanate: A First Principles Study

Autores: Mina Bahrami, Dominic Waldhoer, Pedram Khakbaz, Theresia Knobloch, Aftab Nazir, Changze Liu, Tibor Grasser
Publicado en: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Edición 127, 2023
Editor: IEEE
DOI: 10.23919/SISPAD57422.2023.10319515

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Autores: Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Publicado en: ECS Transactions, Edición 111, 2023, ISSN 1938-6737
Editor: The Electrochemical Society
DOI: 10.1149/11101.0219ecst

Reliability Assessment of Double-Gated Wafer-Scale MoS₂ Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses

Autores: A. Provias, T. Knobloch, A. Kitamura, K. P. O’Brien, C. J. Dorow, D. Waldhoer, B. Stampfer, A. V. Penumatcha, S. Lee, R. Ramamurthy, S. Clendenning, M. Waltl, U. Avci, T. Grasser
Publicado en: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Editor: IEEE
DOI: 10.1109/IEDM45741.2023.10413755

Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors

Autores: T. Knobloch, D. Waldhoer, M. R. Davoudi, A. Karl, P. Khakbaz, M. Matzinger, Y. Zhang, K. K. H. Smithe, A. Nazir, C. Liu, Y. Y. Illarionov, E. Pop, H. Peng, B. Kaczer, T. Grasser
Publicado en: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Editor: IEEE
DOI: 10.1109/IEDM45741.2023.10413824

Modeling the Impact of Interface and Border Traps on Hysteresis in Encapsulated Monolayer MoS₂ Based Double Gated FETs

Autores: Rittik Ghosh, Theresia Knobloch, Alexander Karl, Christoph Wilhelmer, Alexandros Provias, Dominic Waldhör, Tibor Grasser
Publicado en: 2024 Austrochip Workshop on Microelectronics (Austrochip), 2024
Editor: IEEE
DOI: 10.1109/Austrochip62761.2024.10716217

Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi₂O₂Se

Autores: Mohammad Rasool Davoudi, Pedram Khakbaz, Theresia Knobloch, Dominic Waldhoer, Changze Liu, Aftab Nazir, Yichi Zhang, Hailin Peng, Tibor Grasser
Publicado en: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Edición 80, 2024
Editor: IEEE
DOI: 10.23919/SISPAD57422.2023.10319609

(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials

Autores: Theresia Knobloch, Tibor Grasser
Publicado en: ECS Meeting Abstracts, Edición MA2023-01, 2023, ISSN 2151-2043
Editor: The Electrochemical Society
DOI: 10.1149/MA2023-01131319mtgabs