Fluorides for 2D Next-Generation Nanoelectronics

Informazioni relative al progetto

F2GO

ID dell’accordo di sovvenzione: 101055379

DOI

10.3030/101055379

Data della firma CE 30 Agosto 2022

Data di avvio 1 Settembre 2022

Data di completamento 31 Agosto 2027

Finanziato da

• European Research Council (ERC)

Costo totale

€ 2 498 609,00

Contributo UE

€ 2 498 609,00

Coordinato da

TECHNISCHE UNIVERSITAET WIEN
Austria

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Peer reviewed articles (10)

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Autori: Yaqing Shen, Kaichen Zhu, Yiping Xiao, Dominic Waldhr, Abdulrahman H. Basher, Theresia Knobloch, Sebastian Pazos, Xianhu Liang, Wenwen Zheng, Yue Yuan, Juan B. Roldan, Udo Schwingenschlgl, He Tian, Huaqiang Wu, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing, Saptarshi Das, Tibor Grasser, Mario Lanza
Pubblicato in: Nature Electronics, Numero 7, 2024, ISSN 2520-1131
Editore: Springer Science and Business Media LLC
DOI: 10.1038/s41928-024-01233-w

Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects

Autori: Theresia Knobloch, Dominic Waldhoer, Tibor Grasser
Pubblicato in: IEEE Nanotechnology Magazine, Numero 17, 2023, ISSN 1932-4510
Editore: IEEE Nanotechnology Magazine
DOI: 10.1109/mnano.2023.3278969

Machine learning force field for thermal oxidation of silicon

Autori: Lukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer, Diego Milardovich, Dominic Waldhör, Tibor Grasser
Pubblicato in: The Journal of Chemical Physics, Numero 161, 2024, ISSN 1089-7690
Editore: AIP Publishing
DOI: 10.1063/5.0220091

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

Autori: Aljoscha Söll, Edoardo Lopriore, Asmund Ottesen, Jan Luxa, Gabriele Pasquale, Jiri Sturala, František Hájek, Vítězslav Jarý, David Sedmidubský, Kseniia Mosina, Igor Sokolović, Saeed Rasouli, Tibor Grasser, Ulrike Diebold, Andras Kis, Zdeněk Sofer
Pubblicato in: ACS Nano, Numero 18, 2024, ISSN 1936-086X
Editore: American Chemical Society (ACS)
DOI: 10.1021/acsnano.3c10411

Initial stages of growth and electronic properties of epitaxial SrF2 thin films on Ag(1 1 1)

Autori: Mauro Borghi, Andrea Mescola, Guido Paolicelli, Monica Montecchi, Sergio D'Addato, Simone Vacondio, Luca Bursi, Alice Ruini, Bryan P. Doyle, Tibor Grasser, Luca Pasquali
Pubblicato in: Applied Surface Science, Numero 656, 2024, ISSN 2520-1131
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2024.159724

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Autori: Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Pubblicato in: ECS Meeting Abstracts, Numero MA2023-01, 2023, ISSN 2151-2043
Editore: The Electrochemical Society
DOI: 10.1149/ma2023-01331864mtgabs

All van der Waals Semiconducting PtSe₂ Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Autori: M. Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković
Pubblicato in: Nano Letters, Numero 24, 2024, ISSN 1530-6984
Editore: American Chemical Society (ACS)
DOI: 10.1021/acs.nanolett.4c00956

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Autori: Dominic Waldhoer; Christian Schleich; Jakob Michl; Alexander Grill; Dieter Claes; Alexander Karl; Theresia Knobloch; Gerhard Rzepa; Jacopo Franco; Ben Kaczer; Michael Waltl; Tibor Grasser
Pubblicato in: IOP Science, 2023, ISSN 1872-941X
Editore: Elsevier
DOI: 10.48550/arxiv.2212.11547

Observation of Rich Defect Dynamics in Monolayer MoS₂

Autori: Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, Alexander Karl, Bernhard Stampfer, Dominic Waldhoer, Yikai Zheng, Najam U Sakib, Muhtasim Ul Karim Sadaf, Rahul Pendurthi, Riccardo Torsi, Joshua A. Robinson, Tibor Grasser, Saptarshi Das
Pubblicato in: ACS Nano, Numero 17, 2023, ISSN 1936-086X
Editore: American Chemical Society (ACS)
DOI: 10.1021/acsnano.2c12900

Comprehensive study of SrF2 growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy

Autori: Mauro Borghi, Giulia Giovanelli, Monica Montecchi, Raffaella Capelli, Andrea Mescola, Guido Paolicelli, Sergio D’Addato, Tibor Grasser, Luca Pasquali
Pubblicato in: Applied Surface Science, Numero 680, 2024, ISSN 1873-5584
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2024.161310

Conference proceedings (7)

Defects in Strontium Titanate: A First Principles Study

Autori: Mina Bahrami, Dominic Waldhoer, Pedram Khakbaz, Theresia Knobloch, Aftab Nazir, Changze Liu, Tibor Grasser
Pubblicato in: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Numero 127, 2023
Editore: IEEE
DOI: 10.23919/SISPAD57422.2023.10319515

(Invited) High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits

Autori: Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Pubblicato in: ECS Transactions, Numero 111, 2023, ISSN 1938-6737
Editore: The Electrochemical Society
DOI: 10.1149/11101.0219ecst

Reliability Assessment of Double-Gated Wafer-Scale MoS₂ Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses

Autori: A. Provias, T. Knobloch, A. Kitamura, K. P. O’Brien, C. J. Dorow, D. Waldhoer, B. Stampfer, A. V. Penumatcha, S. Lee, R. Ramamurthy, S. Clendenning, M. Waltl, U. Avci, T. Grasser
Pubblicato in: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Editore: IEEE
DOI: 10.1109/IEDM45741.2023.10413755

Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors

Autori: T. Knobloch, D. Waldhoer, M. R. Davoudi, A. Karl, P. Khakbaz, M. Matzinger, Y. Zhang, K. K. H. Smithe, A. Nazir, C. Liu, Y. Y. Illarionov, E. Pop, H. Peng, B. Kaczer, T. Grasser
Pubblicato in: 2023 International Electron Devices Meeting (IEDM), 2023, ISSN 2156-017X
Editore: IEEE
DOI: 10.1109/IEDM45741.2023.10413824

Modeling the Impact of Interface and Border Traps on Hysteresis in Encapsulated Monolayer MoS₂ Based Double Gated FETs

Autori: Rittik Ghosh, Theresia Knobloch, Alexander Karl, Christoph Wilhelmer, Alexandros Provias, Dominic Waldhör, Tibor Grasser
Pubblicato in: 2024 Austrochip Workshop on Microelectronics (Austrochip), 2024
Editore: IEEE
DOI: 10.1109/Austrochip62761.2024.10716217

Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi₂O₂Se

Autori: Mohammad Rasool Davoudi, Pedram Khakbaz, Theresia Knobloch, Dominic Waldhoer, Changze Liu, Aftab Nazir, Yichi Zhang, Hailin Peng, Tibor Grasser
Pubblicato in: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Numero 80, 2024
Editore: IEEE
DOI: 10.23919/SISPAD57422.2023.10319609

(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials

Autori: Theresia Knobloch, Tibor Grasser
Pubblicato in: ECS Meeting Abstracts, Numero MA2023-01, 2023, ISSN 2151-2043
Editore: The Electrochemical Society
DOI: 10.1149/MA2023-01131319mtgabs