AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids

Project Information

AdvanSiC

Grant agreement ID: 101075709

DOI

10.3030/101075709

EC signature date 5 December 2022

Start date 1 January 2023

End date 30 September 2026

Funded under

• Climate, Energy and Mobility

Total cost

€ 3 956 595,00

EU contribution

€ 3 242 373,00

Coordinated by

IKERLAN S. COOP
Spain

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (3)

Specifications on standard and Advanced SiC MOSFET designs

Report with the specifications on standard and Advanced SiC MOSFET designs

Report on the Communication and Dissemination Activities_1

Report on the Communication and Dissemination Activities. Month 12 update

Plan for communication, dissemination, and exploitation

Publications

Peer reviewed articles (3)

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Author(s): Gerard Colston; Kelly Turner; Arne Renz; Peter Gammon; Marina Antoniou; Philip A. Mawby; Vishal A. Shah
Published in: Appl. Phys. Lett., Issue 124, 2024, ISSN 1077-3118
Publisher: AIP Publishing
DOI: 10.1063/5.0210680

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Author(s): Kyrylo Melnyk, Arne Benjamin Renz, Qinze Cao, Peter Michael Gammon, Neophytos Lophitis, Luca Maresca, Andrea Irace, Iulian Nistor, Munaf Rahimo, Marina Antoniou
Published in: IEEE Transactions on Electron Devices, Issue 71, 2024, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3435181

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Author(s): Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte
Published in: Materials, Issue 17, 2024, ISSN 1996-1944
Publisher: MDPI AG
DOI: 10.3390/ma17081908

Conference proceedings (4)

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Author(s): Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti, Mario S. Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Published in: 2024
Publisher: Solid State Phenomena
DOI: 10.48550/arXiv.2407.13370

Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices

Author(s): Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos, Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina
Published in: 2024, ISSN 1946-0201
Publisher: IEEE
DOI: 10.1109/ISPSD59661.2024.10579567

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances

Author(s): Almpanis, Ioannis; Evans, Paul; Li, Ke; Lophitis, Neophytos
Published in: 2023, ISBN 979-8-3503-1554-7
Publisher: IEEE
DOI: 10.1109/DMC58182.2023.10412584

Robust and area efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR termination designs and analysis

Author(s): Melnyk, Kyrylo, Gammon, Peter M., Renz, Arne Benjamin, Cao, Quize, Lophitis, Neophytos and Antoniou, Marina
Published in: IEEE Energy Conversion Congress and Exposition, ECCE, 2023, ISSN 2329-3748
Publisher: IEEE
DOI: 10.1109/ECCE53617.2023.10362098