AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids

Informazioni relative al progetto

AdvanSiC

ID dell’accordo di sovvenzione: 101075709

DOI 10.3030/101075709

Data della firma CE 5 Dicembre 2022

Data di avvio 1 Gennaio 2023

Data di completamento 31 Dicembre 2025

Finanziato da

• Climate, Energy and Mobility

Costo totale € 4 001 415,00

Contributo UE € 3 242 373,00

Coordinato da

IKERLAN S. COOP
Spain

Risultati finali

Documents, reports (3)

Specifications on standard and Advanced SiC MOSFET designs

Report with the specifications on standard and Advanced SiC MOSFET designs

Report on the Communication and Dissemination Activities_1

Report on the Communication and Dissemination Activities. Month 12 update

Plan for communication, dissemination, and exploitation

Pubblicazioni

Peer reviewed articles (3)

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Autori: Gerard Colston; Kelly Turner; Arne Renz; Peter Gammon; Marina Antoniou; Philip A. Mawby; Vishal A. Shah
Pubblicato in: Appl. Phys. Lett., Numero 124, 2024, ISSN 1077-3118
Editore: AIP Publishing
DOI: 10.1063/5.0210680

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Autori: Kyrylo Melnyk, Arne Benjamin Renz, Qinze Cao, Peter Michael Gammon, Neophytos Lophitis, Luca Maresca, Andrea Irace, Iulian Nistor, Munaf Rahimo, Marina Antoniou
Pubblicato in: IEEE Transactions on Electron Devices, Numero 71, 2024, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3435181

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Autori: Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte
Pubblicato in: Materials, Numero 17, 2024, ISSN 1996-1944
Editore: MDPI AG
DOI: 10.3390/ma17081908

Conference proceedings (1)

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Autori: Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti, Mario S. Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Pubblicato in: 2024
Editore: Solid State Phenomena
DOI: 10.48550/arXiv.2407.13370